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HMC487LP5E

HMC487LP5E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC487LP5E - SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC487LP5E 数据手册
HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz 5 AMPLIFIERS - SMT Typical Applications The HMC487LP5 / HMC487LP5E is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment and Sensors • Military End-Use Features Saturated Power: +33 dBm @ 20% PAE +36 dBm Output IP3 20 dB Gain +7.0 V @ 1300 mA Supply 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package Functional Diagram General Description The HMC487LP5 & HMC487LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifiers housed in leadless 5 x 5 mm surface mount packages. Operating from 9 to 12 GHz, the amplifier provides 20 dB of gain, +33 dBm of saturated power and 20% PAE from a +7.0 V supply voltage. Output IP3 is +36 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC487LP5 & HMC487LP5E eliminate the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd1, 2, 3, 4, 5 = +7V, Idd = 1300 mA* Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = +7V, Vgg = -0.3V Typ.) 29 17 Min. Typ. 9 - 11 20 0.05 7 7 32 33 36 9 1300 28 0.07 19 Max. Min. Typ. 11 - 12 22 0.05 15 15 31 32 35 8 1300 0.07 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg between -2 to 0V to achieve Idd = 1300 mA typical. 5 - 486 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Broadband Gain and Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 6 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 8 8.5 9 9.5 10 10.5 5 AMPLIFIERS - SMT 5 - 487 GAIN (dB) +25 C +85 C -40 C 11 11.5 12 12.5 13 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -10 -15 +25 C +85 C -40 C -15 -20 +25 C +85 C -40 C -25 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz) -20 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz) P1dB vs. Temperature 36 35 34 33 P1dB (dBm) 31 30 29 28 27 26 25 24 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz) +25 C +85 C -40 C Psat vs. Temperature 36 35 34 33 Psat (dBm) 32 31 30 29 28 27 26 25 24 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz) +25 C +85 C -40 C 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz 5 AMPLIFIERS - SMT Output IP3 vs. Temperature 42 38 34 OIP3 (dBm) 30 26 22 18 14 10 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz) +25 C +85 C -40 C Power Compresion @ 10.5 GHz 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE -6 -4 -2 0 2 4 6 8 10 12 14 16 18 INPUT POWER (dBm) Gain Power and OIP3 vs. Supply Voltage @10.5 GHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 38 36 34 32 30 28 26 24 22 20 18 6.5 7 Vdd Supply Voltage (Vdc) 7.5 Gain P1dB Psat OIP3 Gain, Power and OIP3 vs. Supply Current @ 10.5 GHz Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 42 40 38 36 34 32 30 28 26 24 22 20 18 800 900 1000 1100 1200 1300 Gain P1dB Psat OIP3 Idd Supply Current (mA) Noise Figure vs. Temperature 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 8 8.5 9 9.5 10 10.5 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 NOISE FIGURE (dB) +25 C +85 C -40 C +25 C +85 C -40 C -60 -70 11 11.5 12 12.5 13 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz) FREQUENCY (GHz) 5 - 488 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) 1330 1300 1285 +6.5 +7.0 +7.5 Power Dissipation* 10.5 10 POWER DISSIPATION (W) 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 11 GHz Max Pdiss @ +85C 5 AMPLIFIERS - SMT 5 - 489 Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 1300 mA at +7.0V. Absolute Maximum Ratings Drain Bias Voltage (Vdd1, 2, 3, 4, 5) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 154 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) +8 Vdc -2.0 to 0 Vdc +20 dBm 150 °C 10 W 6.5 °C/W -65 to +150 °C -40 to +85 °C INPUT POWER (dBm) * Refer to “Thermal Management for Surface Mount Components” application note herein. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Storage Temperature Operating Temperature Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC487LP5 HMC487LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H487 XXXX H487 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz 5 AMPLIFIERS - SMT Pin Descriptions Pin Number 1-3, 5-8, 10-12, 14, 15, 17-20, 22-24, 26, 27, 29-31 4 Function N/C Description No connection required. These pins may be connected to RF/DC ground without affecting performance. This pin is AC coupled and matched to 50 Ohms from 9 - 12 GHz. Interface Schematic RFIN 9 Vgg Gate control for amplifier. Adjust to achieve Idd of 1300 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. 21 RFOUT This pin is AC coupled and matched to 50 Ohms from 9 - 12 GHz. 32, 28, 25, 13, 16 Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. GND Ground: Backside of package has exposed metal ground slug that must be connected to ground through a short path. Vias under the device are required Application Circuit Component C1 C2 Value 100 pF 2.2 μF 5 - 490 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC487LP5 / 487LP5E v01.0705 SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 108190 Item J1, J2 J3, J4 C1 - C6 C7 - C12 U1 PCB [2] Description SRI PC Mount SMA Connector 2mm DC Header 100 pF capacitor, 0402 pkg. 2.2μF Capacitor, Tantalum HMC487LP5 / HMC487LP5E Amplifier 108188 Evaluation PCB [1] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. Copper filled vias under the device are recommended. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 491
HMC487LP5E
1. 物料型号: - HMC487LP5:Low Stress Injection Molded Plastic 封装,Sn/Pb 焊料,MSL1等级。 - HMC487LP5E:符合RoHS标准的Low Stress Injection Molded Plastic封装,100%亚光Sn焊料,MSL1等级。

2. 器件简介: - HMC487LP5/HMC487LP5E是高动态范围GaAs PHEMT MMIC 2瓦特功率放大器,工作频率范围为9至12GHz,提供20dB的增益,饱和功率为+33dBm,功率附加效率(PAE)为20%,工作电压为+7.0V。

3. 引脚分配: - 1-3, 5-8, 10-12, 14, 15, 17-20, 22-24, 26, 27, 29-31:无连接(N/C)。 - 4:RFIN,AC耦合,9-12GHz范围内匹配至50欧姆。 - 9:Vgg,放大器的门控控制,调整以实现1300mA的工作电流。 - 21:RFOUT,AC耦合,9-12GHz范围内匹配至50欧姆。 - 32, 28, 25, 13, 16:Vdd1, Vdd2, Vdd3, Vdd4, Vdd5,放大器的电源电压。

4. 参数特性: - 频率范围:9-11GHz和11-12GHz。 - 增益:17-22dB。 - 增益随温度变化:0.05-0.07dB/°C。 - 输入/输出回波损耗:7-15dB。 - 1dB压缩输出功率(P1dB):29-32dBm。 - 饱和输出功率(Psat):32-33dBm。 - 输出三阶截取点(IP3):35-36dBm。 - 噪声系数:8-9dB。 - 电源电流(Idd):1300mA。

5. 功能详解: - 提供宽带增益和回波损耗。 - 根据温度变化,增益、P1dB、Psat和IP3等参数会有所变化。 - 电源电流随电源电压变化。

6. 应用信息: - 适用于点对点无线电、点对多点无线电、测试设备和传感器、军事终端用途。 - 需要使用RF电路设计技术,信号线应具有50欧姆的特性阻抗,接地引脚和暴露的接地垫片应直接连接到接地平面。

7. 封装信息: - HMC487LP5和HMC487LP5E均采用无引线5x5mm表面贴装封装。 - 封装材料为铜合金,引脚间距公差为非累积性,封装翘曲不得超过0.05mm。 - 所有地线和地垫片必须焊接到PCB射频地。
HMC487LP5E 价格&库存

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