HMC490LP5E

HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC490LP5(E) is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • Military EW, ECM & C I 3 Features Noise Figure: 2.5 dB P1dB Output Power: +25 dBm Gain: 23 dB Output IP3: +34 dBm +5V Supply 50 Ohm Matched Input/Output 32 Lead 5x5mm SMT Package: 25mm2 Functional Diagram General Description The HMC490LP5(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier which operates between 12 and 16 GHz. The HMC490LP5(E) provides 23 dB of gain, 2.5 dB noise figure and an output IP3 of +34 dBm from a +5V supply voltage. This versatile amplifier combines excellent, stable +25 dBm P1dB output power with very low noise figure making it ideal for receive and transmit applications. The amplifier is packaged in a leadless 5x5 mm QFN surface mount package. Electrical Specifi cations, TA = +25° C, Vdd = 5V, Idd = 200 mA* Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 22 20 Min. Typ. 12 - 16 23 0.03 2.5 8 8 25 27 34 200 0.04 3.5 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA * Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. 8 - 130 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Broadband Gain & Return Loss 30 Gain vs. Temperature 30 28 26 24 8 LOW NOISE AMPLIFIERS - SMT 8 - 131 20 RESPONSE (dB) GAIN (dB) S21 S11 S22 10 22 20 18 16 14 12 10 8 +25 C +85 C -40 C 0 -10 -20 8 10 12 14 16 18 20 FREQUENCY (GHz) 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25 C +85 C -40 C Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -4 RETURN LOSS (dB) -8 -12 -16 -20 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) Noise Figure vs. Temperature 10 Output IP3 vs. Temperature 40 35 30 IP3 (dBm) 25 20 +25 C +85 C -40 C 8 NOISE FIGURE (dB) +25 C +85 C -40 C 6 4 2 15 10 10 11 12 13 14 15 16 17 18 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) FREQUENCY (GHz) 0 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 32 28 24 P1dB (dBm) Psat vs. Temperature 32 28 24 Psat (dBm) 20 16 12 8 4 0 +25 C +85 C -40 C 20 16 12 8 4 0 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25 C +85 C -40 C 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) Gain, Noise Figure & OIP3 vs. Supply Voltage @ 14 GHz, Idd= 200 mA 40 Gain IP3 Noise Figure Power Compression @ 14 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -20 Pout (dBm) Gain (dB) PAE (%) 5 36 GAIN (dB), IP3 (dBm) 4 NOISE FIGURE (dB) 32 3 28 2 24 1 20 3.5 4 4.5 Vdd (V) 5 0 5.5 -15 -10 -5 0 5 10 INPUT POWER (dBm) Gain, Noise Figure & IP3 vs. Supply Current @ 14 GHz, Vdd= 5V* 34 5 Reverse Isolation vs. Temperature 0 -10 30 GAIN (dB), IP3 (dBm) 4 ISOLATION (dB) -20 -30 -40 -50 -60 Noise Figure +25 C +85 C -40 C NOISE FIGURE (dB) 26 3 22 2 18 Gain IP3 1 14 100 125 150 Idd (mA) 175 0 200 -70 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) * Idd is controlled by varying Vgg 8 - 132 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Typical Supply Current vs. Vdd Vdd (V) +3.0 +3.5 +4.0 +4.5 +5.0 34 °C/W -65 to +150 °C -40 to +85 °C +5.5 Idd (mA) 140 154 168 188 200 208 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +5V) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 29 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5V -4 to 0V +10 dBm 175 °C 2.65 W 8 LOW NOISE AMPLIFIERS - SMT 8 - 133 Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED Package Information Part Number HMC490LP5 HMC490LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic LAND PATTERN. Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H490 XXXX H490 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 6 - 12, 14 - 19, 23, 24, 26, 27, 29 - 31 Function N/C Description The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. Package bottom must also be connected to RF/DC ground. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3, 5, 20, 22 GND 4 RFIN 13 Vgg Gate control for amplifier. Adjust to achieve Idd of 200 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01 μF are required. 21 25, 28, 32 RFOUT Vdd3, 2, 1 This pad is AC coupled and matched to 50 Ohms. Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 μF are required. Application Circuit 8 - 134 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 108402 [1] Item J1 - J2 J3 - J8 C1 - C4 C5 - C8 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 1000 pF Capacitor, 0402 Pkg. 4.7 μF Capacitor, Tantalum HMC490LP5 / HMC490LP5E 108540 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 135