HMC499LC4_09

HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Typical Applications The HMC499LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors Features Output IP3: +34 dBm Saturated Power: +24 dBm @ 16% PAE Gain: 17 dB Supply: +5V @ 200mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm SMT Package 11 LINEAR & POWER AMPLIFIERS - SMT • Military End-Use Functional Diagram General Description The HMC499LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” RoHS Compliant SMT package. Operating from 21 to 32 GHz, the amplifier provides 16 dB of gain, +24 dBm of saturated power and 16% PAE from a +5V supply voltage. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC499LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 200 mA* Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V Typ.) 20 14 Min. Typ. 21 - 24 17 0.02 10 11 23 23.5 31 6 200 20 0.03 13 Max. Min. Typ. 24 - 28 16 0.02 8 12 23 23.5 34 5 200 20 0.03 9 Max. Min. Typ. 28 - 32 13 0.02 8 8 23 24 33.5 5 200 0.03 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. 11 - 288 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) Gain vs. Temperature 22 20 18 16 GAIN (dB) 5 0 -5 -10 -15 -20 18 20 22 24 26 S21 S11 S22 14 12 10 8 6 4 2 0 +25 C +85 C -40 C 11 31 32 33 28 30 32 34 36 20 21 22 23 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25 C +85 C -40 C Output Return Loss vs. Temperature 0 -4 RETURN LOSS (dB) -3 RETURN LOSS (dB) +25 C +85 C -40 C -8 -6 -12 -9 -16 -12 -20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) -15 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) P1dB vs. Temperature 30 Psat vs. Temperature 30 26 P1dB (dBm) Psat (dBm) 26 22 +25 C +85 C -40 C 22 +25 C +85 C -40 C 18 18 14 14 10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) 10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 289 LINEAR & POWER AMPLIFIERS - SMT HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Output IP3 vs. Temperature 40 Noise Figure vs. Temperature 12 10 NOISE FIGURE (dB) 8 6 4 2 0 +25 C +85 C -40 C 36 IP3 (dBm) 32 +25 C +85 C -40 C 11 LINEAR & POWER AMPLIFIERS - SMT 28 24 20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) Gain, Power & Output IP3 vs. Supply Voltage @ 22 GHz Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 32 30 28 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 +25 C +85 C -40 C 26 24 22 20 18 16 14 12 10 4.5 Gain P1dB Psat IP3 -60 -70 5 5.5 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) Vdd Supply Voltage (Vdc) Power Compression @ 22 GHz 28 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 4 0 -12 Power Compression @ 30 GHz 28 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 4 0 -12 Pout Gain PAE Pout Gain PAE -8 -4 0 4 8 12 -8 -4 0 4 8 12 16 INPUT POWER (dBm) INPUT POWER (dBm) 11 - 290 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 193 200 207 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 25 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc -4 to 0 Vdc +20 dBm 175 °C 2.25 W 40 °C/W -65 to +150 °C -40 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 200 mA at +5V. 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 291 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Pin Descriptions Pin Number 1, 5 - 8, 10 - 14, 18, 20, 22, 24 2, 4, 15, 17 Function N/C Description No connection required. These pins may be connected to RF/DC ground without affecting performance. Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. Interface Schematic GND 11 LINEAR & POWER AMPLIFIERS - SMT 3 RFIN 9 Vgg Gate control for amplifier. Adjust to achieve Id of 200 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 16 RFOUT This pad is AC coupled and matched to 50 Ohms. 23, 21, 19 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. Application Circuit Component C1 C2 C3 Value 100 pF 1,000 pF 2.2 μF 11 - 292 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC499LC4 v03.1208 SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 293 List of Material for Evaluation PCB 108537 [1] Item J1, J2 J3 - J8 C1 - C4 C5 - C8 C9 - C12 U1 PCB [2] Description 2.92 mm PC mount K-connector DC Pin 100 pF capacitor, 0402 pkg. 1,000 pF Capacitor, 0603 pkg. 2.2μF Capacitor, Tantalum HMC498LC4 Amplifier 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com