HMC504LC4B

HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Features Noise figure: 2.2 dB @ 20 GHz Gain: 19 dB p1dB output power: +17 dBm supply Voltage: +4V @ 90mA output ip3: +26 dBm 50 ohm matched input/output 24 lead 4x4mm smT package: 16mm2 7 Amplifiers - low Noise - smT Typical Applications This HmC504lC4B is ideal for: • point-to-point radios • point-to-multi-point radios • military & space • Test instrumentation Functional Diagram General Description The HmC504lC4B is a GaAs mmiC low Noise wideband Amplifier housed in a leadless 4x4 mm ceramic surface mount package. The amplifier operates between 14 and 27 GHz, providing up to 19 dB of small signal gain, 2.2 dB noise figure, and output ip3 of +26 dBm, while requiring only 90 mA from a +4V supply. The p1dB output power of up to +17 dBm enables the lNA to function as a lo driver for balanced, i/Q or image reject mixers. The HmC504lC4B also features i/os that are DC blocked and internally matched to 50 ohms, making it ideal for high capacity microwave radios or VsAT applications. This versatile lNA is also available in die form as the HmCAlH476. Electrical Specifications, TA = +25 °C, Vdd = +4V, Idd = 90 mA[2] parameter frequency range Gain [1] min. Typ. 14 - 20 max. min. Typ. 20 - 24 max. min. Typ. 24 - 27 max. Units GHz dB dB / °C 16.5 19 0.015 2.2 15 15 15 19.5 24.5 90 3 16 18.5 0.017 2.5 9 12 16.5 19.5 25.5 90 4.2 14 17 0.018 4.5 7 9.5 17 19 26 90 6 Gain Variation over Temperature Noise figure [1] input return loss output return loss output power for 1 dB Compression [1] saturated output power (psat) [1] output Third order intercept (ip3) supply Current (idd) (Vdd = 4V, Vgg = -0.3V Typ.) dB dB dB dBm dBm dBm mA [1] Board loss subtracted out for gain, power and noise figure measurement [2] Adjust Vgg between -1 to 0.3V to achieve idd = 90mA 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Gain vs. Temperature [1] 22 20 18 GAIN (dB) 16 14 +25C +85C - 40C Broadband Gain & Return Loss [1] 25 7 Amplifiers - low Noise - smT 7-2 15 RESPONSE (dB) S21 S11 S22 5 -5 -15 12 10 10 12 14 16 18 20 22 24 26 28 30 32 13 15 17 19 21 23 25 27 29 FREQUENCY (GHz) FREQUENCY (GHz) -25 Input Return Loss vs. Temperature 0 +25C +85C - 40C Output Return Loss vs. Temperature 0 +25C +85C - 40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -10 -10 -15 -15 -20 -20 -25 13 15 17 19 21 23 25 27 29 FREQUENCY (GHz) -25 13 15 17 19 21 23 25 27 29 FREQUENCY (GHz) Noise Figure vs. Temperature [1] 10 +25C +85C - 40C Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 8 NOISE FIGURE (dB) 6 20 15 +25C +85C - 40C 4 2 10 5 13 15 17 19 21 23 25 27 13 15 17 19 21 23 25 27 29 FREQUENCY (GHz) FREQUENCY (GHz) 0 [1] Board loss subtracted out for gain, power and noise figure measurement F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Psat vs. Temperature [1] 24 7 Amplifiers - low Noise - smT P1dB vs. Temperature [1] 20 16 P1dB (dBm) Psat (dBm) 20 12 +25C +85C - 40C 16 +25C +85C - 40C 8 12 4 8 0 13 15 17 19 21 23 25 27 29 FREQUENCY (GHz) 4 13 15 17 19 21 23 25 27 29 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 13 15 17 19 21 23 25 27 29 FREQUENCY (GHz) Power Compression @ 21 GHz [1] 20 Pout (dBm), GAIN (dB), PAE (%) 16 12 8 4 0 -4 -20 Pout Gain PAE +25C +85C - 40C -15 -10 -5 0 5 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 21 GHz [1] 22 20 GAIN (dB), P1dB (dBm) 18 16 14 12 10 8 3.5 4 Vdd (V) 7 6 5 4 3 2 1 0 4.5 NOISE FIGURE (dB) [1] Board loss subtracted out for gain, power and noise figure measurement 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Absolute Maximum Ratings Drain Bias Voltage rf input power Gate Bias Voltage Channel Temperature Continuous pdiss (T = 85 °C) (derate 20 mw/°C above 85 °C) Thermal resistance (Channel to die bottom) storage Temperature operating Temperature +4.5V +6 dBm -1 to 0.3V 180 °C 1.9 w 50 °C/w -65 to +150 °C -55 to +85 °C 7 eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing NoTes: 1. pACKAGe BoDY mATeriAl: AlUmiNA. 2. leAD AND GroUND pADDle plATiNG: GolD flAsH oVer NiCKel. 3. DimeNsioNs Are iN iNCHes (millimeTers). 4. leAD spACiNG TolerANCe is NoN-CUmUlATiVe. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm DATUm – C – 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 Amplifiers - low Noise - smT HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 7 Amplifiers - low Noise - smT Pin Descriptions pin Number 1 - 3, 5 - 8, 11 - 16, 18, 19, 24 function GND Description package bottom has exposed metal paddle that must be connected to rf/DC ground. This pad is AC coupled and matched to 50 ohms. This pad is AC coupled and matched to 50 ohms. interface schematic 4 rfiN 17 rfoUT 20 Vgg Gate control for amplifier. please follow “mmiC Amplifier Biasing procedure” application note. see assembly for required external components. 21 Vdd power supply Voltage for the amplifier. see assembly for required external components. Application Circuit Component C1, C2 C3, C4 C5, C6 Value 100 pf 10,000 pf 4.7 µf 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 122789 item J1, J2 J3 - J6 C1, C2 C3, C4 C5, C6 U1 pCB [2] Description 2.92mm pCB mount K-Connector DC pin 100 pf Capacitor, 0402 pkg. 10,000pf Capacitor, 0603 pkg. 4.7 µf Capacitor, Tantalum HmC504lC4B Amplifier 122787 evaluation pCB [3] [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr [3] Due to the very high frequency operation of this product a custom LC4B PCB footprint and solder stencil are required for this design. Performance shown in this data sheet was produced using this custom footprint. DO NOT USE Hittite’s standard LC4B footprint. Please contact Applications for details. The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6