HMC516

HMC516 v00.0904 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC516 is ideal for use as a LNA or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Features Noise Figure: 1.8 dB Gain: 20 dB OIP3: +20 dBm Single Supply: 3V @ 65 mA 50 Ohm Matched Input/Output Functional Diagram General Description The HMC516 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 7 to 17 GHz frequency range. The HMC516 provides 20 dB of small signal gain, 1.8 dB of noise figure and has an output IP3 greater than +20 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = +3V) 10 17 Min. Typ. 7-9 19.5 0.02 2.5 8 13 13 15 20 65 12 0.03 3.3 18 Max. Min. Typ. 9 - 12 20.5 0.02 2.0 10 15 15 16 20 65 13 0.03 2.6 18 Max. Min. Typ. 12 - 17 20.5 0.02 1.8 10 17 16 17 20 65 0.03 2.3 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 1 - 156 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v00.0904 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 24 22 20 GAIN (dB) 18 16 14 12 10 6 8 10 12 14 16 18 FREQUENCY (GHz) 1 AMPLIFIERS - CHIP 1 - 157 +25C +85C -55C Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 +25C +85C -55C -5 RETURN LOSS (dB) -10 -15 -20 -25 6 8 10 12 14 16 18 FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 35 30 25 OIP3 (dBm) 20 15 10 5 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v00.0904 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz 1 AMPLIFIERS - CHIP P1dB vs. Temperature 20 18 16 14 P1dB (dBm) 12 10 8 6 4 2 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Psat vs. Temperature 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Power Compression @ 12 GHz 25 Pout (dBm), GAIN (dB), PAE(%) 20 Pout Gain PAE 15 10 5 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 24 22 GAIN (dB), P1dB (dBm) Gain 20 18 16 14 12 10 2.5 3 Vdd (Vdc) Noise Figure P1dB 5 4 3 2 1 0 3.5 NOISE FIGURE (dB) 7 6 1 - 158 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v00.0904 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 +3.0 +3.5 Idd (mA) 61 65 69 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFin)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 14 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +4 Vdc +5 dBm 175 °C 1.25 W 71 °C/W -65 to +150 °C -55 to +85 °C Class 1A 1 AMPLIFIERS - CHIP 1 - 159 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v00.0904 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz 1 AMPLIFIERS - CHIP Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 7 - 17 GHz. Interface Schematic 2, 3, 4 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 5 RFOUT This pad is AC coupled and matched to 50 Ohms from 7 - 17 GHz. These pads must be connected to RF/DC ground for proper operation. 6, 7, 8 G3, 2, 1 Die Bottom GND Die Bottom must be connected to RF/DC ground. Assembly Diagram Note: G1, G2 and G3 must be connected to RF/DC ground. 1 - 160 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v00.0904 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Gold ribbon of 0.075 mm (3 mils) width and minimum < 0.31 mm ( ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com