HMC516LC5_09

HMC516LC5 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC516LC5 is ideal for use as a LNA or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military Features Noise Figure: 2 dB Gain: 20 dB OIP3: +25 dBm Single Supply: +3V @ 65 mA 50 Ohm Matched Input/Output RoHS Compliant 5x5 mm Package Functional Diagram General Description The HMC516LC5 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless “Pb free” RoHS compliant SMT package. The HMC516LC5 provides 20 dB of small signal gain, 2 dB of noise figure and has an output IP3 of +25 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q or image reject mixers. The HMC516LC5 allows the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = +3V) 17.5 Min. Typ. 9 - 12 20 0.015 2.0 10 12 13 15 25 65 88 0.025 2.5 18 Max. Min. Typ. 12 - 18 20.5 0.015 2.0 10 12 14 16 25 65 88 0.025 2.5 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 8 - 138 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516LC5 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz Broadband Gain & Return Loss 25 20 Gain vs. Temperature 22 20 8 LOW NOISE AMPLIFIERS - SMT 8 - 139 15 RESPONSE (dB) 10 5 0 -5 -10 12 -15 -20 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 10 8 10 12 14 16 18 FREQUENCY (GHz) GAIN (dB) S21 S11 S22 18 16 14 +25C +85C -40C Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) 16 18 -5 +25C +85C -40C -10 -15 -20 -25 -10 -15 -20 8 10 12 14 FREQUENCY (GHz) -30 8 10 12 14 16 18 FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 20 15 10 5 0 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516LC5 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 20 18 16 14 P1dB (dBm) 12 10 8 6 4 2 0 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Power Compression @ 12 GHz 25 Pout (dBm), GAIN (dB), PAE (%) 20 Pout Gain PAE 15 10 5 0 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 24 22 GAIN (dB), P1dB (dBm) 20 Gain 18 16 P1dB 14 Noise Figure 12 10 2.5 3 Vdd (V) 2 1 0 3.5 4 3 7 6 5 NOISE FIGURE (dB) 8 - 140 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516LC5 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 +3.0 +3.5 Idd (mA) 61 65 69 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 14 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +4 Vdc +5 dBm 175 °C 1.25 W 71 °C/W -65 to +150 °C -40 to +85 °C Class 1A 8 LOW NOISE AMPLIFIERS - SMT 8 - 141 Note: Amplifi er will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516LC5 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 6-19, 23-25, 27, 29, 31, 32 Function Description This pin may be connected to RF/DC ground. Performance will not be affected. Interface Schematic N/C 4 RFIN This pin is AC coupled and matched to 50 Ohms. 30, 28, 26 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. 3, 5, 20, 22 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Component C1, C2, C3 C4, C5, C6 Value 100 pF 2.2 μF 8 - 142 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516LC5 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 110431 [1] Item J1 - J2 J3 C1 - C3 C4 - C6 U1 PCB [2] Description PCB Mount K Connector 2 mm DC Header 100 pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, Tantalum HMC516LC5 Amplifier 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 143