HMC516_09

HMC516 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications The HMC516 is ideal for use as a LNA or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Features Noise Figure: 1.8 dB Gain: 20 dB OIP3: +20 dBm Single Supply: 3V @ 65 mA 50 Ohm Matched Input/Output Die Size: 2.52 x 1.32 x 0.1 mm Functional Diagram General Description The HMC516 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 7 to 17 GHz frequency range. The HMC516 provides 20 dB of small signal gain, 1.8 dB of noise figure and has an output IP3 greater than +20 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections. Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = +3V) 10 17 Min. Typ. 7-9 19.5 0.02 2.5 8 13 13 15 20 65 88 12 0.03 3.3 18 Max. Min. Typ. 9 - 12 20.5 0.02 2.0 10 15 15 16 20 65 88 13 0.03 2.6 18 Max. Min. Typ. 12 - 17 20.5 0.02 1.8 10 17 16 17 20 65 88 0.03 2.3 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 1 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 12 10 6 8 10 12 14 16 18 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 24 22 20 GAIN (dB) 18 16 14 +25C +85C -55C 1 LOW NOISE AMPLIFIERS - CHIP 1 - 55 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 +25C +85C -55C -5 RETURN LOSS (dB) -10 -15 -20 -25 6 8 10 12 14 16 18 FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 20 15 10 5 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz 1 LOW NOISE AMPLIFIERS - CHIP P1dB vs. Temperature 20 18 16 14 P1dB (dBm) 12 10 8 6 4 2 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Psat vs. Temperature 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Power Compression @ 12 GHz 25 Pout (dBm), GAIN (dB), PAE(%) 20 Pout Gain PAE 15 10 5 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 24 22 GAIN (dB), P1dB (dBm) Gain 20 18 16 14 12 10 2.5 3 Vdd (V) Noise Figure P1dB 5 4 3 2 1 0 3.5 NOISE FIGURE (dB) 7 6 1 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 14 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +4 Vdc +5 dBm 175 °C 1.25 W 71 °C/W -65 to +150 °C -55 to +85 °C Class 1A Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 +3.0 +3.5 Idd (mA) 61 65 69 1 LOW NOISE AMPLIFIERS - CHIP 1 - 57 Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz 1 LOW NOISE AMPLIFIERS - CHIP Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 2, 3, 4 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 5 RFOUT This pad is AC coupled and matched to 50 Ohms. These pads must be connected to RF/DC ground for proper operation. 6, 7, 8 G3, 2, 1 Die Bottom GND Die Bottom must be connected to RF/DC ground. Assembly Diagram Note: G1, G2 and G3 must be connected to RF/DC ground. 1 - 58 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC516 v02.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Gold ribbon of 0.075 mm (3 mils) width and minimum < 0.31 mm (