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HMC517LC4_09

HMC517LC4_09

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC517LC4_09 - SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC517LC4_09 数据手册
HMC517LC4 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC517LC4 is ideal for use as a LNA or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors Features Noise Figure: 2.5 dB Gain: 19 dB OIP3: +23 dBm Single Supply: +3V @ 67 mA 50 Ohm Matched Input/Output • Military RoHS Compliant 4 x 4 mm Package Functional Diagram General Description The HMC517LC4 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless “Pb free” RoHS compliant SMT package. The HMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise figure and has an output IP3 of +23 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q or image reject mixers. The HMC517LC4 allows the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = +3V) 16 Min. Typ. 17 - 22 19 0.02 2.5 15 11 12 15 23 67 0.03 3.1 15 Max. Min. Typ. 22 - 26 18 0.02 2.6 15 17 13 16 24 67 0.03 3.3 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 8 - 144 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC517LC4 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz Broadband Gain & Return Loss 25 Gain vs. Temperature 24 22 8 LOW NOISE AMPLIFIERS - SMT 8 - 145 15 RESPONSE (dB) 20 5 GAIN (dB) S21 S11 S22 18 16 14 +25C +85C -40C -5 -15 12 -25 12 16 20 24 28 32 FREQUENCY (GHz) 10 16 18 20 22 24 26 28 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) 26 28 -5 +25C +85C -40C -5 -10 -10 -15 -15 -20 -20 16 18 20 22 24 FREQUENCY (GHz) -25 16 18 20 22 24 26 28 FREQUENCY (GHz) Noise Figure vs. Temperature 10 Output IP3 vs. Temperature 30 25 20 IP3 (dBm) 15 10 8 NOISE FIGURE (dB) +25C +85C -40C 6 4 +25C +85C -40C 2 5 0 16 18 20 22 24 26 16 18 20 22 24 26 FREQUENCY (GHz) FREQUENCY (GHz) 0 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC517LC4 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 20 Psat vs. Temperature 20 16 P1dB (dBm) Psat (dBm) 16 12 12 +25C +85C -40C 8 +25C +85C -40C 8 4 4 0 16 18 20 22 24 26 FREQUENCY (GHz) 0 16 18 20 22 24 26 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 16 18 20 22 24 26 28 FREQUENCY (GHz) +25C +85C -40C Power Compression @ 21 GHz 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -24 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE -20 -16 -12 -8 -4 0 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 21 GHz 21 20 19 18 17 16 15 14 13 12 11 10 9 8 2.5 Gain 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 3 Vdd (V) 3.5 GAIN (dB), P1dB (dBm) NOISE FIGURE (dB) Noise Figure P1dB 8 - 146 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC517LC4 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 +3.0 +3.5 Idd (mA) 66 68 71 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 29 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +2 dBm 175 °C 2.65 W 34 °C/W -65 to +150 °C -40 to +85 °C Class 1A 8 LOW NOISE AMPLIFIERS - SMT 8 - 147 Note: Amplifi er will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC517LC4 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 5-14, 18, 20, 22, 24 Function Description This pin may be connected to RF/DC ground. Performance will not be affected. Interface Schematic N/C 3 RFIN This pin is AC coupled and matched to 50 Ohms from 17 - 26 GHz. 23, 21, 19 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 μF are required. 16 RFOUT This pin is AC coupled and matched to 50 Ohms from 17 - 26 GHz. 2, 4, 15, 17 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Component C1, C2, C3 C4, C5, C6 C7, C8, C9 Value 100 pF 1,000 pF 2.2 μF 8 - 148 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC517LC4 v02.1208 SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 108537 [1] Item J1 - J2 J3 - J6 C1 - C3 C4 - C6 C7 - C9 U1 PCB [2] Description PCB Mount K Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1,000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum HMC517LC4 Amplifier 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 149
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