HMC517
v02.0907
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
The HMC517 is ideal for use as a LNA or Driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space
Features
Noise Figure: 2.2 dB Gain: 19 dB OIP3: +24 dBm Single Supply: +3V @ 65 mA 50 Ohm Matched Input/Output Die Size: 2.14 x 1.32 x 0.1 mm
Functional Diagram
General Description
The HMC517 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 17 to 26 GHz frequency range. The HMC517 provides 19 dB of small signal gain, 2.2 dB of noise figure and has an output IP3 greater than +24 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.
Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = +3V) 8 16 Min. Typ. 17 - 22 19 0.015 2.2 17 10 11 15 23 65 88 9.5 0.025 2.7 15 Max. Min. Typ. 22 - 26 18 0.015 2.4 15 10 12.5 15 24 65 88 0.025 2.9 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA
1 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC517
v02.0907
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz
Broadband Gain & Return Loss
25
Gain vs. Temperature
24 22 20
1
LOW NOISE AMPLIFIERS - CHIP
1 - 61
15 RESPONSE (dB) GAIN (dB)
S21 S11 S22
5
18 16 14
+25C +85C -55C
-5
-15 12 -25 12 16 20 24 28 32 FREQUENCY (GHz) 10 16 18 20
22
24
26
28
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C +85C -55C
Output Return Loss vs. Temperature
0
+25C +85C -55C
-5 RETURN LOSS
-4 RETURN LOSS
-10
-8
-15
-12
-20
-16
-25 16 18 20 22 24 26 28 FREQUENCY (GHz)
-20 16 18 20 22 24 26 28 FREQUENCY (GHz)
Noise Figure vs. Temperature
10
Output IP3 vs. Temperature
30 25 20 IP3 (dBm) 15 10
+25C +85C -55C
8 NOISE FIGURE (dB)
+25C +85C -55C
6
4
2
5 0 16 18 20 22 24 26 16 18 20 22 24 26 FREQUENCY (GHz) FREQUENCY (GHz)
0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC517
v02.0907
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz
1
LOW NOISE AMPLIFIERS - CHIP
P1dB vs. Temperature
20
Psat vs. Temperature
20
16 P1dB (dBm) Psat (dBm)
16
12
12
+25C +85C -55C
8
+25C +85C -55C
8
4
4
0 16 18 20 22 24 26 FREQUENCY (GHz)
0 16 18 20 22 24 26 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 16 18 20 22 24 26 28 FREQUENCY (GHz)
+25C +85C -55C
Power Compression @ 21 GHz
22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -24 Pout (dBm), GAIN (dB), PAE (%)
Pout Gain PAE
-20
-16
-12
-8
-4
0
INPUT POWER (dBm)
Gain, Noise Figure & Power vs. Supply Voltage @ 21 GHz
21 20 19 18 17 16 15 14 13 12 11 10 9 8 2.5 Gain 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 3 Vdd (V) 3.25 3.5
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Noise Figure
P1dB
2.75
1 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC517
v02.0907
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 9.8 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +2 dBm 175 °C 0.88 W 102.6 °C/W -65 to +150 °C -55 to +85 °C Class 1A
Typical Supply Current vs. Vdd
Vdd (Vdc) +2.5 +3.0 +3.5 Idd (mA) 61 65 69
1
LOW NOISE AMPLIFIERS - CHIP
1 - 63
Note: Amplifi er will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard GP-2 (Gel Pack) Alternate [2]
[1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC517
v02.0907
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required.
5
RFOUT
This pad is AC coupled and matched to 50 Ohms. These pads must be connected to RF/DC ground for proper operation.
6, 7, 8
Vgg3, Vgg2, Vgg1
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
Note: Vgg1, Vgg2 and Vgg3 must be connected to RF/DC ground.
1 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC517
v02.0907
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Gold ribbon of 0.075 mm (3 mils) width and minimum < 0.31 mm (
