HMC519LC4

HMC519LC4 v02.1208 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC519LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors • Military & Space Features Noise Figure: 3.5 dB Gain: 14 dB Output IP3: +23 dBm Single Supply: +3V @ 75 mA 50 Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm2 Functional Diagram General Description The HMC519LC4 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless 4 x 4 mm ceramic surface mount package. The amplifier operates between 18 and 31 GHz, providing 14 dB of small signal gain, 3.5 dB noise figure and output IP3 of +23 dBm, while requiring only 75 mA from a +3V single supply. The P1dB output power of +11 dBm, enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC519LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for microwave radio and VSAT applications. Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 8 11.4 Min. Typ. 18 - 28 14.4 0.016 3.5 15 20 11 14 23 75 95 9.2 0.026 5.5 10.2 Max. Min. Typ. 28 - 31 13.2 0.016 3 17 22 12.2 15.4 24 75 95 0.026 5 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 8 - 150 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC519LC4 v02.1208 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz Broadband Gain & Return Loss 25 Gain vs. Temperature 20 8 LOW NOISE AMPLIFIERS - SMT 8 - 151 15 RESPONSE (dB) GAIN (dB) S21 S11 S22 16 5 12 +25C - 40C +85C -5 8 -15 4 -25 12 0 16 20 24 28 32 36 16 19 22 25 28 31 34 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 16 19 22 25 28 31 34 FREQUENCY (GHz) +25C - 40C +85C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -10 +25C - 40C +85C -20 -30 -40 16 19 22 25 28 31 34 FREQUENCY (GHz) Noise Figure vs. Temperature 10 +25C - 40C +85C Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 20 15 10 +25C - 40C +85C 8 RESPONSE (dB) 6 4 2 5 0 16 19 22 25 28 31 34 FREQUENCY (GHz) 0 16 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC519LC4 v02.1208 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 20 Psat vs. Temperature 20 16 P1dB (dBm) Psat (dBm) 16 12 12 +25C - 40C +85C 8 +25C - 40C +85C 8 4 4 0 16 19 22 25 28 31 34 FREQUENCY (GHz) 0 16 19 22 25 28 31 34 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 Power Compression @ 24 GHz 20 Pout (dBm), GAIN (dB), PAE (%) -20 ISOLATION (dB) +25C - 40C +85C 16 12 Pout Gain PAE -40 8 -60 4 -80 16 19 22 25 28 31 34 FREQUENCY (GHz) 0 -20 -16 -12 -8 -4 0 4 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 24 GHz 24 Gain (dB), P1dB (dBm), NF (dB) 20 16 12 8 4 0 2.5 Gain P1dB NF 3 Vdd (V) 3.5 8 - 152 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC519LC4 v02.1208 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz Typical Supply Current vs. Vdd Vdd (Vdc) 2.5 3.0 3.5 Idd (mA) 72 75 78 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 12 mW/°C above 85 °C) Thermal Resistance (channel to package bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +3.5 Vdc +8 dBm 175 °C 1.08 W 8 LOW NOISE AMPLIFIERS - SMT 8 - 153 Note: Amplifi er will operate over full voltage ranges shown above. 83 °C/W -65 to 150 °C -40 to 85 °C Class 1B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC519LC4 v02.1208 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz 8 LOW NOISE AMPLIFIERS - SMT Pad Descriptions Pad Number 1, 5-14, 18, 20, 22, 24 Function N/C Description Not Connected Interface Schematic 2, 4, 15, 17 GND Package bottom has exposed metal paddle that must be connected to RF/DC ground. This pad is AC coupled and matched to 50 Ohms This pad is AC coupled and matched to 50 Ohms 3 RFIN 16 RFOUT 19, 21, 23 Vdd3, Vdd2, Vdd1 Power Supply Voltage for the amplifier. See application circuit for required external components. Application Circuit 8 - 154 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC519LC4 v02.1208 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Material for Evaluation PCB 119667 [1] Item J1, J2 J3 - J6 C1, C2, C3 C4, C5, C6 C7, C8, C9 U1 PCB [2] Description 2.92mm PCB mount K-Connector DC Pin 100pF Capacitor, 0402 Pkg. 1000pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum HMC519LC4 Amplifier 11995 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 155