HMC543_09

HMC543 v02.0209 22.5° MMIC 4-BIT DIGITAL PHASE SHIFTER, 8 - 12 GHz Typical Applications The HMC543 is ideal for: • EW Receivers Features Low RMS Phase Error: 5° Low Insertion Loss: 6.5 dB Excellent Flatness 360° Coverage, LSB = 22.5° Die Size: 0.99 x 2.46 x 0.1 mm 3 PHASE SHIFTERS - DIGITAL - CHIP • Weather & Military Radar • Satellite Communications • Beamforming Modules Functional Diagram General Description The HMC543 is a 4-bit digital phase shifter die which is rated from 8 to 12 GHz, providing 0 to 360 degrees of phase coverage, with a LSB of 22.5 degrees. The HMC543 features very low RMS phase error of 5 degrees and extremely low insertion loss variation of ±0.8 dB across all phase states. This high accuracy phase shifter is controlled with complementary logic of 0/-3V, and requires no fixed bias voltage and is internally matched to 50 Ohms with no external components. Simple external level shifting circuitry can be used to convert a positive CMOS control voltage into complementary negative control signals. Electrical Specifi cations, TA = +25° C, 50 Ohm System, Control Voltage = 0/-3V Parameter Frequency Range Insertion Loss* Input Return Loss* Output Return Loss* Phase Error* RMS Phase Error Gain Variation* Input Power for 1 dB Compression Input Third Order Intercept Control Voltage Current *Note: All States Shown 21 Min. 8 5 10 10 ±10 5 ±0.8 24.5 40 0.4 ±15 Typ. Max. 12 7 Units GHz dB dB dB deg deg dB dBm dBm μA 3-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC543 v02.0209 22.5° MMIC 4-BIT DIGITAL PHASE SHIFTER, 8 - 12 GHz Insertion Loss, All States 0 -2 INSERTION LOSS (dB) -4 -6 -8 -10 -12 8 9 10 FREQUENCY (GHz) 11 12 Normalized Loss, All States 4 3 NORMALIZED LOSS (dB) 2 1 0 3 PHASE SHIFTERS - DIGITAL - CHIP 3-9 -1 -2 -3 -4 8 9 10 FREQUENCY (GHz) 11 12 Input Return Loss, All States 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 8 9 10 FREQUENCY (GHz) 11 12 Phase Error, All States 20 15 PHASE ERROR (degrees) 10 5 0 -5 -10 -15 -20 8 9 10 FREQUENCY (GHz) 11 12 Output Return Loss, All States 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 8 9 10 FREQUENCY (GHz) 11 12 Relative Phase Shift, All States 400 RELATIVE PHASE SHIFT (degrees) 350 300 250 200 150 100 50 0 8 9 10 FREQUENCY (GHz) 11 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC543 v02.0209 22.5° MMIC 4-BIT DIGITAL PHASE SHIFTER, 8 - 12 GHz Relative Phase Shift, RMS, Average, Max, All States 20 RELATIVE PHASE SHIFT (degrees) 15 10 5 0 -5 -10 8 9 10 FREQUENCY (GHz) 11 12 RMS AVERAGE MAX Input IP3, All States 55 50 45 IP3 (dBm) 40 35 30 25 8 9 10 FREQUENCY (GHz) 11 12 3 PHASE SHIFTERS - DIGITAL - CHIP Input IP2, All States 100 Input P1dB, All States 30 90 P1dB (dBm) 8 9 10 FREQUENCY (GHz) 11 12 28 IP2 (dBm) 80 26 70 24 60 22 50 20 8 9 10 FREQUENCY (GHz) 11 12 RMS Phase Error vs. Temperature 20 RELATIVE PHASE SHIFT (degrees) 15 10 5 0 -5 -10 8 9 10 FREQUENCY (GHz) 11 12 +25C +85C -40C Maximum Insertion Loss vs. Temperature 0 INSERTION LOSS (dB) -2 -4 -6 +25 deg C +85 deg C -40 deg C -8 -10 8 9 10 FREQUENCY (GHz) 11 12 3 - 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC543 v02.0209 22.5° MMIC 4-BIT DIGITAL PHASE SHIFTER, 8 - 12 GHz Phase Error vs. State 20 15 PHASE ERROR (degrees) 8 GHz 10 5 Absolute Maximum Ratings Input Power (RFin) (8-12 GHz) Channel Temperature (Tc) Thermal Resistance (channel to die bottom) Storage Temperature +27 dBm (T= +85 °C) 150 °C 130 °C/W -65 to +150 °C -40 to +85 °C 3 PHASE SHIFTERS - DIGITAL - CHIP 3 - 11 0 -5 -10 9,10,11 & 12 GHz -15 -20 0 50 100 150 200 250 300 350 STATE (degrees) Operating Temperature Control Voltage State Low (0) High (1) Bias Condition -2.5 to -3.5V @ 0.4 μA Typ. 0 to +0.3V @ 0.4 μA Typ. Truth Table Control Voltage Input Bit 1 0 1 Bit 1 1 0 1 1 1 0 Bit 2 0 0 1 0 0 1 Bit 2 1 1 0 1 1 0 Bit 3 0 0 0 1 0 1 Bit 3 1 1 1 0 1 0 Bit 4 0 0 0 0 1 1 Bit 4 1 1 1 1 0 0 Phase Shift (Degree) RFIN - RFOUT Reference 22.5 45.0 90.0 180.0 337.5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 0 0 0 1 Any combination of the above states will provide a phase shift approximately equal to the sum of the bits selected. Pad Descriptions Pad Number Function Description These pins and die bottom must be connected to RF/DC ground. Interface Schematic 1, 3, 12, 14 GND 2 RFIN This port is matched to 50 Ohms. 4, 7, 9, 11 BIT3, BIT1, BIT2, BIT4 BIT3, BIT1 BIT2, BIT4 Non-Inverted Control Input. See truth table and control voltage tables. Inverted Control Input. See truth table and control voltage tables. 5, 6, 8, 10 13 RFOUT This port is matched to 50 Ohms. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC543 v02.0209 22.5° MMIC 4-BIT DIGITAL PHASE SHIFTER, 8 - 12 GHz Outline Drawing 3 PHASE SHIFTERS - DIGITAL - CHIP Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. DIE THICKNESS IS 0.007 3. TYPICAL BOND PAD IS 0.004 SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PADS METALLIZATION: GOLD 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±0.002 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Application Circuit 3 - 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC543 v02.0209 22.5° MMIC 4-BIT DIGITAL PHASE SHIFTER, 8 - 12 GHz Assembly Diagram 3 PHASE SHIFTERS - DIGITAL - CHIP 3 - 13 Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and fl at. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible