HMC561_09

HMC561 v02.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT Features High Output Power: +17 dBm Low Input Power Drive: 0 to +6 dBm Fo Isolation: 15 dBc @ Fout= 16 GHz 100 KHz SSB Phase Noise: -139 dBc/Hz Die Size: 1.6 x 0.9 x 0.1 mm Typical Applications 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP The HMC561 is suitable for: • Clock Generation Applications: SONET OC-192 & SDH STM-64 • Point-to-Point & VSAT Radios • Test Instrumentation • Military & Space Functional Diagram General Description The HMC561 is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When driven by a +5 dBm signal, the multiplier provides +17 dBm typical output power from 8 to 21 GHz and the Fo and 3Fo isolations are 15 dBc at 16 GHz. The HMC561 is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -139 dBc/Hz at 100 kHz offset helps maintain good system noise performance. Electrical Specifi cations, TA = +25°C, Vdd1= Vdd2= +5V, 5 dBm Drive Level Parameter Frequency Range, Input Frequency Range, Output Output Power Fo Isolation (with respect to output level) 3Fo Isolation (with respect to output level) 4Fo Isolation (with respect to output level) Input Return Loss Output Return Loss SSB Phase Noise (100 kHz Offset) Supply Current (Idd) (Vdd1= Vdd2= +5V, Vgg = -1.7V Typ.) *Adjust Vgg between -2.0 and -1.2V to achieve Idd1 + Idd2 = 98 mA 14 Min. Typ. 4 - 10.5 8 - 21 17 15 15 15 15 12 -139 98 126 Max. Units GHz GHz dBm dBc dBc dBc dB dB dBc/Hz mA 2 - 38 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC561 v02.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT Output Power vs. Drive Level 20 15 10 5 0 -5 -10 -2dBm 0dBm 4dBm 2dBm 6dBm Output Power vs. Temperature @ 5 dBm Drive Level 22 20 OUTPUT POWER (dBm) 16 14 12 10 8 6 4 2 7 9 11 13 15 17 19 21 23 FREQUENCY (GHz) +25C +85C -55C OUTPUT POWER (dBm) 18 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 - 39 7 11 15 FREQUENCY (GHz) 19 23 Output Power vs. Supply Voltage @ 5 dBm Drive Level 22 20 OUTPUT POWER (dBm) Isolation @ 5 dBm Drive Level 20 15 OUTPUT POWER (dBm) 10 5 0 -5 -10 -15 -20 -25 -30 -35 7 11 15 FREQUENCY (GHz) 19 23 F0 2F0 3F0 4F0 18 16 14 12 10 8 6 4 2 7 11 15 FREQUENCY (GHz) 19 23 4.5V 5.0V 5.5V Output Power vs. Input Power 25 20 OUTPUT POWER (dBm) 15 10 5 0 -5 -10 -15 -5 -2 1 4 7 10 INPUT POWER (dBm) 8GHz 14GHz 20GHz SSB Phase Noise Performance, Fout= 16 GHz, Input Power = +3 dBm 0 SSB PHASE NOISE (dBc/Hz) -30 -60 -90 -120 -150 -180 2 10 10 3 10 4 10 5 10 6 10 7 OFFSET FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC561 v02.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT Output Return Loss vs. Temperature 0 +25C -55C +85C Input Return Loss vs. Temperature 2 RETURN LOSS (dB) 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 3 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) +25C +85C -55C -4 FREQUENCY MULTIPLIERS - ACTIVE - CHIP -8 -12 -16 -20 7 9 11 13 15 17 19 21 23 FREQUENCY (GHz) Supply Current vs. Input Power 130 125 120 115 110 Idd (mA) 105 100 95 90 85 80 75 70 -10 -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) Absolute Maximum Ratings RF Input (Vdd1= Vdd2= +5V) Supply Voltage (Vdd1, Vdd2) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 10.4 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +10 dBm +5.5 Vdc 175 °C 940 mW 95.9 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd1, Vdd2 Vdd1, Vdd2 (Vdc) 4.5 5.0 5.5 Idd1 + Idd2 (mA) 97 98 99 Note: Multiplier will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 2 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC561 v02.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT Outline Drawing 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 - 41 Die Packaging Information Standard GP-2 (Gel Pack) [1] Alternate [2] — [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] Reference this suffix only when ordering alternate die packaging. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE. 4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER. 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METALIZATION: GOLD 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. Pin Description Pin Number Function Description Interface Schematic 1, 4, 8 GND Die bottom must be connected to RF ground. 2 RFIN Pin is AC coupled and matched to 50 Ohms. 3 Vgg Gate control for multiplier. Adjust to achieve Idd of 98 mA. Please follow “MMIC Amplifier Biasing Procedure” Application note. 5, 6 Vdd1, Vdd2 Supply voltage 5V ± 0.5V. 7 RFOUT Pin is AC coupled and matched to 50 Ohms. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC561 v02.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT Assembly Diagram 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC561 v02.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length