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HMC565LC5

HMC565LC5

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC565LC5 - GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC565LC5 数据手册
HMC565LC5 v02.0209 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz Features Noise Figure: 2.5 dB Gain: 21 dB OIP3: 20 dBm Single Supply: +3V @ 53 mA 50 Ohm Matched Input/Output RoHS Compliant 5 x 5 mm Package 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC565LC5 is ideal for use as a LNA or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Functional Diagram General Description The HMC565LC5 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier housed in a leadless RoHS compliant 5x5mm SMT package. Operating from 6 to 20 GHz, the HMC565LC5 features 21 dB of small signal gain, 2.5 dB noise figure and IP3 of +20 dBm across the operating band. This self-biased LNA is ideal for microwave radios due to its single +3V supply operation, and DC blocked RF I/O’s. Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Total Supply Current (Idd)(Vdd = +3V) 8 19 Min. Typ. 6 - 12 21 0.025 2.5 15 13 10 11 20 53 75 9 0.035 2.8 16 Max. Min. Typ. 12 - 20 18.5 0.025 2.5 12 15 11 13 21 53 75 0.035 3 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 8 - 178 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC565LC5 v02.0209 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz Broadband Gain & Return Loss 30 20 RESPONSE (dB) 10 0 -10 -20 -30 0 5 10 15 20 25 30 FREQUENCY (GHz) Gain vs. Temperature 30 25 20 GAIN (dB) 8 LOW NOISE AMPLIFIERS - SMT 8 - 179 S21 S11 S22 15 10 5 0 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) +25C +85C -40C Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) +25C +85C -40C -10 -10 -15 -15 -20 -20 -25 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) -25 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) Noise Figure vs. Temperature 10 Output IP3 vs. Temperature 30 8 NOISE FIGURE (dB) +25C +85C -40C 25 6 IP3 (dBm) 20 4 15 +25C +85C -40C 2 10 0 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) 5 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC565LC5 v02.0209 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 20 Psat vs. Temperature 20 16 P1dB (dBm) Psat (dBm) +25C +85C -40C 16 12 12 8 8 +25C +85C -40C 4 4 0 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) 0 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) +25C +85C -40C Power Compression @ 12 GHz 25 Pout (dBm), GAIN (dB), PAE(%) 20 15 10 5 0 -5 -20 Pout Gain PAE -15 -10 -5 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 25 10 9 GAIN (dB), P1dB (dBm) 20 Gain 15 P1dB 8 7 6 5 10 4 3 5 Noise Figure 2 1 0 2.5 3 Vdd (Vdc) 0 3.5 NOISE FIGURE (dB) 8 - 180 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC565LC5 v02.0209 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 +3.0 +3.5 Idd (mA) 51 53 56 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 8.5 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +3.5 Vdc 0 dBm 175 °C 0.753 W 119.5 °C/W -65 to +150 °C -40 to +85 °C Class 1A 8 LOW NOISE AMPLIFIERS - SMT 8 - 181 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC565LC5 v02.0209 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 6 - 19, 23 - 25, 27, 29, 31, 32 Function Description This pin may be connected to RF/DC ground. Performance will not be affected. Interface Schematic N/C 3, 5, 20, 22 GND These pins and package bottom must be connected to RF/DC ground. 4 RFIN This pin is AC coupled and matched to 50 Ohms. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. 30, 28, 26 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. Application Circuit Component C1, C2, C3 C4, C5, C6 Value 100 pF 2.2 μF 8 - 182 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC565LC5 v02.0209 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 110431 [1] Item J1 - J2 J3 C1 - C3 C4 - C6 U1 PCB [2] Description PCB Mount K Connector 2 mm DC Header 100 pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, Tantalum HMC565LC5 Amplifier 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 183
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