HMC566

HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications The HMC566 is ideal for use as a LNA or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Features Noise Figure: 2.8 dB Gain: 20 dB OIP3: 23.5 dBm Single Supply: +3V @ 80 mA 50 Ohm Matched Input/Output Small Size: 2.54 x 0.98 x 0.10 mm Functional Diagram General Description The HMC566 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 29 to 36 GHz. The HMC566 provides 20 dB of small signal gain, 2.8 dB of noise figure and output IP3 of 23.5 dBm across the operating band. This selfbiased LNA is ideal for hybrid and MCM assemblies due to its compact size, slightly positive gain slope, single +3V supply operation, and DC blocked RF I/O’s. All data is measured with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil). Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3, 4 = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = +3V) 9 17 Min. Typ. 29 - 33 20 0.03 2.8 15 9 12 14.5 23.5 80 9 0.05 3.3 19 Max. Min. Typ. 33 - 36 22 0.03 2.8 15 8 12 14.5 23.5 80 0.05 3.3 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 1 - 90 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 Gain vs. Temperature 30 1 LOW NOISE AMPLIFIERS - CHIP 1 - 91 25 GAIN (dB) 5 0 -5 -10 -15 -20 -25 24 26 28 30 32 S21 S11 S22 20 15 +25C +85C -55C 10 5 34 36 38 40 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) +25C +85C -55C Noise Figure vs. Temperature 10 Reverse Isolation vs. Temperature 0 NOISE FIGURE (dBm) 8 +25C +85C -55C -10 ISOLATION (dB) +25C +85C -55C 6 -20 4 -30 2 -40 0 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) -50 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz 1 LOW NOISE AMPLIFIERS - CHIP P1dB vs. Temperature 20 Psat vs. Temperature 20 16 P1dB (dBm) Psat (dBm) 16 12 12 +25C +85C -55C 8 +25C +85C -55C 8 4 4 0 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) 0 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) Output IP3 vs. Temperature 30 Power Compression @ 32 GHz 22 Pout (dBm), GAIN (dB), PAE (%) 20 18 16 14 12 10 8 6 4 2 0 -20 Pout Gain PAE 26 IP3 (dBm) 22 +25C +85C -55C 18 14 10 27 28 29 30 31 32 33 34 35 36 37 38 FREQUENCY (GHz) -16 -12 -8 -4 0 FREQUENCY (GHz) Gain, Noise Figure & Power vs. Supply Voltage @ 32 GHz 24 22 GAIN (dB), P1dB (dBm) 20 18 16 14 12 10 8 6 4 2.5 3 Vdd (Vdc) Noise Figure Gain P1dB 10 9 8 7 6 5 4 3 2 1 0 3.5 NOISE FIGURE (dB) 1 - 92 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 +3.0 +3.5 0.82 W 104.2 °C/W -65 to +150 °C -55 to +85 °C Idd (mA) 77 80 83 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, 2, 3, 4) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 9.6 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +3.5 Vdc +5 dBm 175 °C 1 LOW NOISE AMPLIFIERS - CHIP 1 - 93 Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz 1 LOW NOISE AMPLIFIERS - CHIP Pad Descriptions Pad Number 1 Function IN Description This pad is AC coupled and matched to 50 Ohms from 29 - 36 GHz. Interface Schematic 2, 3, 4, 5 Vdd1, 2, 3, 4 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 6 OUT This pad is AC coupled and matched to 50 Ohms from 29 - 36 GHz. Die Bottom GND Die Bottom must be connected to RF/DC ground. Assembly Diagram 1 - 94 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 1 LOW NOISE AMPLIFIERS - CHIP 1 - 95 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible