HMC566LP4E

HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Features low Noise figure: 2.8 dB High Gain: 21 dB High oip3: +24 dBm single positive supply: +3V @ 82 mA 50 ohm matched & DC Blocked i/os 24 lead 4x4mm QfN package: 16mm² 7 Amplifiers - low Noise - smT Typical Applications The HmC566lp4e is ideal for: • point-to-point radios • point-to-multi-point radios & VsAT • Test equipment and sensors • military & space Functional Diagram General Description The HmC566lp4e is a high dynamic range GaAs pHemT mmiC low Noise Amplifier (lNA) in a 4x4 mm smT package which operates from 28 to 36 GHz. The HmC566lp4e provides 21 dB of small signal gain, 2.8 dB of noise figure and output ip3 of 24 dBm. This self-biased lNA is ideal for hybrid and mCm assemblies due to its compact size, single +3V supply operation, and DC blocked rf i/o’s. The roHs packaged HmC566lp4e eliminates the need for wirebonding and allows the use of high volume surface mount manufacturing techniques. The HmC566lp4e is also available in chip form as the HmC566. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3, 4 = +3V parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd1+idd2+idd3+idd4) 50 18 min. Typ. 28 - 31.5 21 0.03 2.8 14 8 11 13 23.5 82 106 50 3.6 19.5 max. min. Typ. 31.5 - 33.5 22.5 0.03 2.8 18 10 12 14 24.5 82 106 50 3.6 18 max. min. Typ. 33.5 - 36 21 0.03 3.3 12 7 11 13 24.5 82 106 4.3 max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Gain vs. Temperature 30 28 26 24 GAIN (dB) Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 22 24 26 28 30 32 34 36 38 40 FREQUENCY (GHz) S21 S11 S22 7 Amplifiers - low Noise - smT 7-2 22 20 18 16 14 12 10 26 28 30 32 34 36 38 FREQUENCY (GHz) +25 C +85 C - 40 C Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 26 28 30 32 34 36 38 FREQUENCY (GHz) +25 C +85 C - 40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -5 -10 -15 +25 C +85 C - 40 C -20 26 28 30 32 34 36 38 FREQUENCY (GHz) Noise Figure vs. Temperature 10 +25 C +85 C -40 C Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 +25 C +85 C - 40 C 8 NOISE FIGURE (dB) 6 4 2 0 26 28 30 32 34 36 38 FREQUENCY (GHz) 26 28 30 32 34 36 38 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Psat vs. Temperature 18 16 14 Psat (dBm) 12 10 8 6 4 +25 C +85 C - 40 C 7 Amplifiers - low Noise - smT P1dB vs. Temperature 18 16 14 P1dB (dBm) 12 10 8 6 4 26 28 30 32 34 36 38 FREQUENCY (GHz) +25 C +85 C - 40 C 26 28 30 32 34 36 38 FREQUENCY (GHz) Output IP3 vs. Temperature 30 28 26 IP3 (dB) 24 22 20 18 16 14 26 28 30 32 34 36 38 FREQUENCY (GHz) +25 C +85 C - 40 C Power Compression @ 32 GHz 25 Pout (dBm), GAIN (dB), PAE (%) 20 Pout Gain PAE 15 10 5 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 32 GHz 30 27 GAIN (dB), P1dB (dBm) 24 21 18 15 12 9 6 3 0 2.5 3 Vdd (V) Noise Figure Gain P1dB Absolute Maximum Ratings 10 9 8 7 6 5 4 3 2 1 0 3.5 NOISE FIGURE (dB) Drain Bias Voltage (Vdd1, 2, 3, 4) rf input power (rfiN)(Vdd = +3 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 9.6 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +3.5 V +5 dBm 175 °C 0.8 w 104 °C/w -65 to +150 °C -40 to +85 °C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Typical Supply Current vs. Vdd Vdd (V) +2.5 +3.0 +3.5 idd (mA) 79 82 85 7 Amplifiers - low Noise - smT 7-4 Note: Amplifier will operate over full voltage ranges shown above. Pin Descriptions pin Number 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 3 function GND Description This pins and exposed ground paddle must be connected to rf/DC ground. This pin is AC coupled and matched to 50 ohms. No Connection This pin is AC coupled and matched to 50 ohms. interface schematic rfiN 8 - 11 N/C 16 rfoUT 23, 22, 21, 20 Vdd1, 2, 3, 4 power supply Voltage for the amplifier. external bypass capacitors of 100 pf, 10 nf and 4.7 µf are required. Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz 7 Amplifiers - low Noise - smT Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC566lp4e package Body material roHs-compliant low stress injection molded plastic lead finish 100% matte sn [2] package marking [1] H566 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 122782 item J1 - J5 J6 - J7 C1 - C4 C5 - C8 C9 - C12 U1 pCB [2] Description DC pin pCB mount K Connector 100 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0603 pkg. 4.7 µf Capacitor, Tantalum HmC566lp4e 122780 evaluation pCB [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25 fr The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6