HMC576

HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Typical Applications Features High Output Power: +17 dBm Low Input Power Drive: -2 to +6 dBm Fo Isolation: >20 dBc @ Fout= 24 GHz 100 KHz SSB Phase Noise: -132 dBc/Hz Single Supply: +5V@ 82 mA Die Size: 1.18 x 1.23 x 0.1 mm 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP The HMC576 is suitable for: • Clock Generation Applications: SONET OC-192 & SDH STM-64 • Point-to-Point & VSAT Radios • Test Instrumentation • Military EW / Radar • Space Functional Diagram General Description The HMC576 die is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology. When driven by a +3 dBm signal, the multiplier provides +17 dBm typical output power from 18 to 29 GHz. The Fo and 3Fo isolations are >20 dBc and >30 dBc respectively at 24 GHz. The HMC576 is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -132 dBc/Hz at 100 kHz offset helps maintain good system noise performance. Electrical Specifi cations, TA = +25° C, Vdd1, Vdd2 = 5.0V, 3 dBm Drive Level Parameter Frequency Range, Input Frequency Range, Output Output Power Fo Isolation (with respect to output level) 3Fo Isolation (with respect to output level) Input Return Loss Output Return Loss SSB Phase Noise (100 kHz Offset) Supply Current (Idd1 & Idd2) 11 Min. Typ. 9.0 - 14.5 18 - 29 17 20 17 10 9 -132 82 Max. Units GHz GHz dBm dBc dBc dB dB dBc/Hz mA 2 - 44 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Output Power vs. Temperature @ 3 dBm Drive Level 20 18 OUTPUT POWER (dBm) Output Power vs. Drive Level 25 20 OUTPUT POWER (dBm) 15 10 5 0 -5 -10 -15 -20 -25 -30 -6dBm -4dBm -2dBm 0dBm 2dBm 4dBm 6dBm 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 - 45 16 14 12 10 8 6 4 2 0 17 18 19 20 21 22 23 24 25 26 27 28 29 30 OUTPUT FREQUENCY (GHz) +25C +85C -55C 17 18 19 20 21 22 23 24 25 26 27 28 29 30 OUTPUT FREQUENCY (GHz) Output Power vs. Supply Voltage @ 3 dBm Drive Level 20 18 OUTPUT POWER (dBm) Isolation @ 3 dBm Drive Level 20 14 12 10 8 6 4 2 0 17 18 19 20 21 22 23 24 25 26 27 28 29 30 OUTPUT FREQUENCY (GHz) 4.5V 5.0V 5.5V OUTPUT POWER (dBm) 16 10 0 -10 Fo 2Fo 3Fo -20 -30 17 18 19 20 21 22 23 24 25 26 27 28 29 30 OUTPUT FREQUENCY (GHz) Output Power vs. Input Power 20 15 OUTPUT POWER (dBm) 10 5 0 -5 -10 -15 -20 -10 18GHz 24GHz 29GHz -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) -2 -4 -6 -8 -10 -12 -14 -16 -18 +25C +85C -55C INPUT RETURN LOSS (dB) 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 0 -5 -10 -15 -20 -25 -30 8 9 10 11 12 13 14 15 FREQUENCY (GHz) +25C +85C -55C -20 17 18 19 20 21 22 23 24 25 26 27 28 29 FREQUENCY (GHz) 2 - 46 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Absolute Maximum Ratings RF Input (Vdd = +5V) Supply Voltage (Vdd1, Vdd2) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 7.9 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +20 dBm +6.0 Vdc 175 °C 709 mW 126 °C/W -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) 4.5 5.0 5.5 Idd (mA) 82 82 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 - 47 83 Note: Multiplier will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] — [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] Reference this suffix only when ordering alternate die packaging. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE. 4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER. 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METALIZATION: GOLD 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Pad Description 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP Pad Number Function Description Interface Schematic 1, 2 Vdd1, Vdd2 Supply voltage 5V ± 0.5V. 3 RFOUT Pin is AC coupled and matched to 50 Ohms from 18 - 29 GHz. 4, 5 GND Die bottom must be connected to RF ground. 6 RFIN Pin is AC coupled and matched to 50 Ohms from 9 - 14.5 GHz. Assembly Diagram 2 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length