HMC590LP5

HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications The HMC590LP5 / HMC590LP5E is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios Features Saturated Output Power: +31.5 dBm @ 23% PAE Output IP3: +40 dBm Gain: 21 dB DC Supply: +7V @ 820 mA 50 Ohm Matched Input/Output QFN Leadless SMT Packages, 25 mm2 11 LINEAR & POWER AMPLIFIERS - SMT • Test Equipment & Sensors • Military End-Use • Space Functional Diagram General Description The HMC590LP5 & HMC590LP5E are high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifiers which operate from 6 to 9.5 GHz. The amplifier provides 21 dB of gain, +31 dBm of saturated power, and 23% PAE from a +7welV supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +40 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield +30 dBm Out-put P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 820 mA[1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm [2] Min. Typ. 6-8 Max. Min. Typ. 6 - 9.5 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 18 21 0.05 15 11 18 21 0.05 12 10 27 30 30.5 40 820 27.5 30.5 31 40 820 11 - 294 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Broadband Gain & Return Loss 30 25 20 RESPONSE (dB) 15 Gain vs. Temperature 28 24 S21 S11 S22 GAIN (dB) 10 5 0 -5 -10 -15 -20 -25 4 5 6 7 8 20 16 +25C +85C -40C 11 9 9.5 10 12 8 9 10 11 12 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) RETURN LOSS (dB) -10 -15 +25C +85C -40C +25C +85C -40C -20 -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) P1dB vs. Temperature 35 Psat vs. Temperature 35 33 P1dB (dBm) 33 31 Psat (dBm) 31 29 +25C +85C -40C 29 +25C +85C -40C 27 27 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 295 LINEAR & POWER AMPLIFIERS - SMT HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz P1dB vs. Current 35 Psat vs. Current 35 33 P1dB (dBm) 33 31 Psat (dBm) 31 11 LINEAR & POWER AMPLIFIERS - SMT 29 520mA 620mA 720mA 820mA 29 520mA 620mA 720mA 820mA 27 27 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm 46 Power Compression @ 8 GHz, 7V @ 820 mA 35 Pout(dBm), GAIN (dB), PAE(%) 30 25 20 15 10 5 0 -14 Pout Gain PAE 42 IP3 (dBm) 38 34 +25C +85C -40C 30 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) -10 -6 -2 2 6 10 14 INPUT POWER (dBm) Output IM3, 7V @ 520 mA 80 Output IM3, 7V @ 820 mA 80 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 60 IM3 (dBc) IM3 (dBc) 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 60 40 40 20 20 0 -20 -16 -12 -8 -4 0 4 8 0 -20 -16 -12 -8 -4 0 4 8 Pin/Tone (dBm) Pin/Tone (dBm) 11 - 296 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz 36 GAIN (dB), P1dB (dBm), Psat(dBm) Gain & Power vs. Supply Voltage @ 8 GHz 34 GAIN (dB), P1dB (dBm), Psat(dBm) 32 30 28 26 24 22 20 18 6.5 Gain P1dB Psat 32 Gain P1dB Psat 28 24 20 11 7.5 16 940 1140 Idd SUPPLY CURRENT (mA) 1340 7 Vdd SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature, 7V @ 820 mA 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) +25C +85C -40C Power Dissipation 6 5.5 5 4.5 4 3.5 3 -14 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz -10 -6 -2 2 6 10 14 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 75 °C) (derate 59.8 mW/°C above 75 °C) Thermal Resistance (channel to package bottom) Storage Temperature Operating Temperature +8 Vdc -2.0 to 0 Vdc +12 dBm 175 °C 5.98 W 16.72 °C/W -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +6.5 +7.0 +7.5 Idd (mA) 824 820 815 Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 820 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 297 LINEAR & POWER AMPLIFIERS - SMT POWER DISSIPATION (W) HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Outline Drawing 11 LINEAR & POWER AMPLIFIERS - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC590LP5 HMC590LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H590 XXXX H590 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 298 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Pin Descriptions Pin Number 1, 2, 6 - 19, 23, 24, 26, 27, 29, 31 3, 5, 20, 22 Function N/C Description Not connected. Interface Schematic GND These pins and package bottom must be connected to RF/DC ground. This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. 4 RFIN 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 299 21 RFOUT 25, 28, 30 Vdd 1-3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. 32 Vgg Gate control for amplifier. Adjust to achieve Idd of 820 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Application Circuit Component C1 - C4 C5 - C8 Value 100pF 2.2μF 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 300 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590LP5 / 590LP5E v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 301 List of Materials for Evaluation PCB 115927 [1] Item J1 - J2 J3 C1 - C4 C5 - C8 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg 2.2 μF Capacitor, 1206 Pkg HMC590LP5 / HMC590LP5E 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com