HMC590_09

HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications The HMC590 is ideal for use as a power amplifier for: • Point-to-Point Radios Features Saturated Output Power: +31.5 dBm @ 25% PAE Output IP3: +41 dBm Gain: 24 dB DC Supply: +7V @ 820 mA 50 Ohm Matched Input/Output Die Size: 2.47 x 1.33 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram General Description The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 820 mA[1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm (IP3)[2] 27 21 Min. Typ. 6 - 10 24 0.05 10 10 30 31.5 41 820 28.5 0.07 22 Max. Min. Typ. 6.8 - 9 25 0.05 10 10 31.5 32 41 820 0.07 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 3 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Broadband Gain & Return Loss 30 25 20 RESPONSE (dBm) 15 5 0 -5 -10 -15 -20 -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) 10 Gain vs. Temperature 34 30 26 GAIN (dB) 22 18 14 10 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) S21 S11 S22 3 +25C +85C -55C Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 +25C +85C -55C -20 -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) P1dB vs. Temperature 35 Psat vs. Temperature 35 33 P1dB (dBm) Psat (dBm) 33 31 +25C +85C -55C 31 +25C +85C -55C 29 29 27 27 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 71 LINEAR & POWER AMPLIFIERS - CHIP HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz P1dB vs. Current 35 Psat vs. Current 35 33 P1dB (dBm) Psat (dBm) 33 3 LINEAR & POWER AMPLIFIERS - CHIP 31 31 520 mA 620 mA 720 mA 820 mA 29 27 520 mA 620 mA 720 mA 820 mA 29 27 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm 46 Power Compression @ 8 GHz, 7V @ 820 mA 35 Pout(dBm), GAIN (dB), PAE(%) 30 25 20 15 10 5 0 -14 Pout Gain PAE 42 IP3 (dBm) 38 34 +25C +85C -55C 30 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) -10 -6 -2 2 6 10 14 INPUT POWER (dBm) Output IM3, 7V @ 520 mA 80 70 60 IM3 (dBc) Output IM3, 7V @ 820 mA 80 70 60 IM3 (dBc) 50 40 30 20 10 0 -20 6GHz 7GHz 8GHz 9GHz 10GHz 50 40 30 20 10 0 -20 6GHz 7GHz 8GHz 9GHz 10GHz -16 -12 -8 -4 0 4 8 -16 -12 -8 -4 0 4 8 Pin/Tone (dBm) Pin/Tone (dBm) 3 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Gain & Power vs. Supply Voltage @ 8 GHz 34 GAIN (dB), P1dB (dBm), Psat(dBm) 32 30 28 26 24 22 20 6.5 Gain P1dB Psat Gain & Power vs. Supply Current @ 8 GHz 34 GAIN (dB), P1dB (dBm), Psat(dBm) 32 30 28 26 24 22 20 520 Gain P1dB Psat 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 73 7 Vdd SUPPLY VOLTAGE (Vdc) 7.5 620 720 820 Idd SUPPLY CURRENT (mA) Reverse Isolation vs. Temperature, 7V @ 820 mA 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) +25C +85C -55C Power Dissipation 6 POWER DISSIPATION (W) 5.5 5 4.5 4 3.5 3 -14 6GHz 7GHz 8GHz 9GHZ 10GHz -10 -6 -2 2 6 10 14 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Supply Current vs. Vdd Vdd (V) +6.5 +7.0 +7.5 Idd (mA) 824 820 815 Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) +8 Vdc -2.0 to 0 Vdc +12 dBm 175 °C 6.0 W 14.9 °C/W -65 to +150 °C -55 to +85 °C 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Power (RFIN)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 67 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 820 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 3 - 74 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 2 Vgg 3-5 Vdd 1-3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 75 LINEAR & POWER AMPLIFIERS - CHIP Gate control for amplifier. Adjust to achieve Idd of 820 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. 3 HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 76 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 77 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible