HMC591

HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications The HMC591 is ideal for use as a power amplifier for: • Point-to-Point Radios Features Saturated Output Power: +34 dBm @ 24% PAE Output IP3: +43 dBm Gain: 23 dB DC Supply: +7.0 V @ 1340 mA 50 Ohm Matched Input/Output 2.47 mm x 2.49 mm x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram General Description The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm (IP3)[2] 30 20 Min. Typ. 6 - 10 23 0.05 12 11 33 33.5 43 1340 30.5 20 Max. Min. Typ. 6.8 - 9 23 0.05 14 10 33.5 34 43 1340 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 3 - 78 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Broadband Gain & Return Loss 30 25 20 RESPONSE (dB) 15 5 0 -5 -10 -15 -20 -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) 10 Gain vs. Temperature 34 32 30 28 GAIN (dB) 26 24 22 18 16 14 12 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) +25C +85C -40C S21 S11 S22 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 79 20 Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -10 -10 -15 -15 +25C +85C -40C -20 -20 -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) P1dB vs. Temperature 36 Psat vs. Temperature 36 34 PSAT (dBm) P1dB (dBm) 34 32 +25C +85C -55C 32 +25C +85C -55C 30 30 28 28 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz P1dB vs. Current 36 Psat vs. Current 36 34 PSAT (dBm) P1dB (dBm) 34 3 LINEAR & POWER AMPLIFIERS - CHIP 32 940 mA 1140 mA 1340 mA 32 940 mA 1140 mA 1340 mA 30 30 28 28 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm 48 Power Compression @ 8 GHz, 7V @ 1340 mA 35 Pout(dBm), GAIN (dB), PAE(%) 30 25 20 15 10 5 0 -14 Pout Gain PAE 44 IP3 (dBm) 40 +25C +85C -55C 36 32 28 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) -9 -4 1 6 11 16 INPUT POWER (dBm) Output IM3, 7V @ 940 mA 90 Output IM3, 7V @ 1340 mA 90 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 70 IM3 (dBc) IM3 (dBc) 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 70 50 50 30 30 10 -20 -16 -12 -8 -4 0 4 8 10 -20 -16 -12 -8 -4 0 4 8 Pin/Tone (dBm) Pin/Tone (dBm) 3 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Gain & Power vs. Supply Voltage @ 8 GHz 38 GAIN (dB), P1dB (dBm), Psat(dBm) Gain & Power vs. Supply Current @ 8 GHz 38 GAIN (dB), P1dB (dBm), Psat(dBm) 34 GAIN P1dB Psat 34 GAIN P1dB Psat 30 30 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 81 26 26 22 22 18 6.5 7 Vdd SUPPLY VOLTAGE (V) 7.5 18 940 1140 Idd SUPPLY CURRENT (mA) 1340 Reverse Isolation vs. Temperature, 7V @ 1340 mA 0 -10 Power Dissipation 10 POWER DISSIPATION (W) -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 6 6.5 7 7.5 8 9 +25C +85C -40C 8 7 6GHz 7GHz 8GHz 9GHz 10GHz 6 8.5 9 9.5 10 5 -14 -10 -6 -2 2 6 10 14 FREQUENCY (GHz) INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 117.6 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +8 Vdc -2 to 0 Vdc +15 dBm 175 °C 10.59 W 8.5 °C/W -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +6.5 +7.0 +7.5 Idd (mA) 1355 1340 1325 Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1340 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Outline Drawing 3 LINEAR & POWER AMPLIFIERS - CHIP Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 3 - 82 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 83 3 - 5, 7, 8 Vdd 1-5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. 9 Vgg Gate control for amplifier. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 84 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 85 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible