HMC591LP5E

HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios Features Saturated Output Power: +33 dBm @ 20% PAE Output IP3: +41 dBm Gain: 18 dB DC Supply: +7.V @ 1340 mA 50 Ohm Matched Input/Output QFN Leadless SMT Packages, 25 mm2 11 LINEAR & POWER AMPLIFIERS - SMT • Test Equipment & Sensors • Military End-Use • Space Functional Diagram General Description The HMC591LP5 & HMC591LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifiers which operate from 6 to 9.5 GHz. The amplifier provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm [2] Min. Typ. 6-8 Max. Min. Typ. 6 - 9.5 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 16 19 0.05 14 12 15 18 0.05 12 10 30 32 32.5 41 1340 30 33 33 41 1340 11 - 302 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Broadband Gain & Return Loss 25 Gain vs. Temperature 28 15 RESPONSE (dB) S21 S11 S22 24 5 GAIN (dB) 20 -5 16 +25C +85C -40C 11 9 9.5 10 -15 12 -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) 8 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -10 -15 +25C +85C -40C -15 +25C +85C -40C -20 -20 -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) -25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz) P1dB vs. Temperature 36 Psat vs. Temperature 36 34 P1dB (dBm) 34 32 +25C +85C -40C Psat (dBm) 32 +25C +85C -40C 30 30 28 28 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 303 LINEAR & POWER AMPLIFIERS - SMT HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz P1dB vs. Current 36 Psat vs. Current 36 34 P1dB (dBm) 34 32 Psat (dBm) 32 940 mA 1140 mA 1340 mA 11 LINEAR & POWER AMPLIFIERS - SMT 30 940 mA 1140 mA 1340 mA 30 28 28 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm 46 Power Compression @ 8 GHz, 7V @ 1340 mA 35 Pout(dBm), GAIN (dB), PAE(%) 30 25 20 15 10 5 0 -14 Pout Gain PAE 42 IP3 (dBm) 38 +25C +85C -40C 34 30 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) -10 -6 -2 2 6 10 14 18 INPUT POWER (dBm) Output IM3, 7V @ 940 mA 100 Output IM3, 7V @ 1340 mA 100 90 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 80 80 70 IM3 (dBc) -4 0 4 8 IM3 (dBc) 60 60 50 40 30 20 40 20 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 0 -20 -16 -12 -8 10 -20 -16 -12 -8 -4 0 4 8 Pin/Tone (dBm) Pin/Tone (dBm) 11 - 304 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz 36 GAIN (dB), P1dB (dBm), Psat(dBm) Gain & Power vs. Supply Voltage @ 8 GHz 36 GAIN (dB), P1dB (dBm), Psat(dBm) 32 Gain P1dB Psat 32 Gain P1dB Psat 28 28 24 24 20 20 11 7 Vdd SUPPLY VOLTAGE (Vdc) 7.5 16 940 1140 Idd SUPPLY CURRENT (mA) 1340 16 6.5 Reverse Isolation vs. Temperature, 7V @ 1340 mA 0 Power Dissipation 10 -20 ISOLATION (dB) +25C +85C -40C 9 -40 8 -60 7 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz -80 6 7 8 FREQUENCY (GHz) 9 10 6 -14 -10 -6 -2 2 6 10 14 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 75 °C) (derate 104.3 mW/°C above 75 °C) Thermal Resistance (channel to package bottom) Storage Temperature Operating Temperature +8 Vdc -2.0 to 0 Vdc +15 dBm 175 °C 10.43 W 9.59 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +6.5 +7.0 +7.5 Idd (mA) 1350 1340 1330 Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1340 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 305 LINEAR & POWER AMPLIFIERS - SMT POWER DISSIPATION (W) HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Outline Drawing 11 LINEAR & POWER AMPLIFIERS - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC591LP5 HMC591LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H591 XXXX H591 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 306 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Pad Descriptions Pad Number 1, 2, 6 - 8, 10 - 12, 14, 15, 17 - 19, 23, 24, 26, 27, 29 - 31 3, 5, 20, 22 Function Description Interface Schematic N/C Not connected. GND Package bottom has an exposed metal paddle that must be connected to RF/DC ground. This pad is AC coupled and matched to 50 Ohms. 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 307 4 RFIN 9 Vgg Gate control for amplifier. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. 13, 16, 25, 28, 32 Vdd 1-5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. 21 RFOUT This pad is AC coupled and matched to 50 Ohms. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Application Circuit Component C1 - C6 C7 - C12 Value 100pF 2.2μF 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 308 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 309 List of Materials for Evaluation PCB 108190 [1] Item J1 - J2 J3 - J4 C1 - C6 C7 - C12 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, 1206 Pkg HMC591LP5 / HMC591LP5E 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com