HMC594LC3B_10

HMC594LC3B v02.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications The HMC594LC3B is ideal for: • Fixed Microwave • Point-to-Multi-Point Radios • Test & Measurement Equipment • Radar & Sensors • Military & Space Features Gain Flatness: ±0.2 dB Noise Figure: 3 dB Gain: 10 dB Output IP3: +36 dBm DC Supply: +5V @ 95mA / +6V @ 100 mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package Functional Diagram General Description The HMC594LC3B is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC594LC3B features extremely flat performance characteristics including 10 dB of small signal gain, 3 dB of noise figure and output IP3 of +36 dBm across the operating band. This high linearity LNA is ideal for test & measurement equipment and military assemblies due to its compact size, consistent output power and DC blocked RF I/O’s. The HMC594LC3B is also available in chip form as the HMC594. Electrical Specifi cations, TA = +25° C, Vdd = +5V, Idd = 95 mA, Vdd = +6V, Idd = 100mA* Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 18 7 Min. Typ. 2-4 10 0.015 3 15 17 21 22 36 100 130 4 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical for 6V or Idd = 95mA typical for 5V. 7 - 196 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC594LC3B v02.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Broadband Gain & Return Loss [1] 15 10 5 RESPONSE (dB) Gain vs. Temperature [1] 12 11 10 GAIN (dB) 7 AMPLIFIERS - LOW NOISE - SMT 7 - 197 0 -5 -10 -15 -20 -25 -30 1 2 3 4 S21 S11 S22 9 8 7 6 5 +25C +85C -40C 5 6 7 8 9 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature [1] 0 +25C +85C -40C Output Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) P1dB vs. Temperature [1] 26 25 24 23 P1dB (dBm) 22 21 20 19 18 17 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature [1] 26 25 24 23 Psat (dBm) 22 21 20 19 18 17 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C [1] Typical response for 5V and 6V Vdd F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC594LC3B v02.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 7 AMPLIFIERS - LOW NOISE - SMT Power Compression @ 3 GHz, 6V 25 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE Power Compression @ 3 GHz, 5V 25 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE 20 20 15 15 10 10 5 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature [1] 40 38 36 Reverse Isolation vs. Temperature [1] 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 34 OIP3 (dBm) 32 30 28 26 24 22 20 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C +25C +85C -40C 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature [1] 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Gain, Power & OIP3 vs. Supply Voltage @ 3 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 40 35 30 25 20 15 10 5 4.5 Gain P1dB Psat OIP3 +25C +85C -40C 5 5.5 Vdd SUPPLY VOLTAGE (V) 6 6.5 [1] Typical response for 5V and 6V Vdd 7 - 198 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC594LC3B v02.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +6V) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 10 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature 7V +15 dBm 175 °C 0.9 W 100 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.5 +6.0 +6.5 Idd (mA) 97 100 103 7 AMPLIFIERS - LOW NOISE - SMT 7 - 199 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC594LC3B v02.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number 1, 3, 7, 9 Function GND Description Package bottom must also be connected to RF/DC ground This pin is AC coupled and matched to 50 Ohms. The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. Interface Schematic 2 RFIN 4, 6 10, 12 N/C 5 Vgg Gate supply voltage for the amplifier. Adjust to achieve Idd= 100mA. External bypass capacitors are required. 8 RFOUT This pin is AC coupled and matched to 50 Ohms. 11 Vdd Power Supply Voltage for the amplifier. External bypass capacitors are required. Application Circuit Component C1, C4 C2, C5 C3, C6 Value 100 pF 1,000 pF 2.2 μF 7 - 200 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC594LC3B v02.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Materials for Evaluation PCB 109712 [1] Item J1 - J2 J3 - J6 C1 - C2 C3 - C4 C5 - C6 U1 PCB [2] Description SRI SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum HMC594LC3B Amplifier 109710 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 201