HMC598

HMC598 v01.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT Features High Output Power: +15 dBm Low Input Power Drive: 0 to +6 dBm Fo Isolation: 25 dBc @ Fout = 30 GHz Die Size: 2.07 x 1.86 x 0.1 mm Typical Applications 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP The HMc598 is ideal for: • clock Generation Applications: Oc-768 & SDM STM-256 • Point-to-Point & vSAT Radios • Test Instrumentation • Military & Space Functional Diagram General Description The HMc598 is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When driven by a +5 dBm signal, the multiplier provides +15 dBm typical output power from 22 to 46 GHz and the Fo and 3Fo isolations are 25 dBc and 15 dBc respectively at 30 GHz. The HMc598 is ideal for use in LO multiplier chains for Point to Point and vSAT radios yielding reduced parts count versus traditional design approaches. Electrical Specifications TA = +25°C, Vdd1, 2, 3 = +5V, Vgg1 = -1.25V, Vgg2 = -0.8V, 5 dBm Drive Level Parameter Frequency Range, Input Frequency Range, Output Output Power Fo Isolation (with respect to output level) 3Fo Isolation (with respect to output level) 4Fo Isolation (with respect to output level) Input Return Loss Output Return Loss Supply current (Idd Total) 10 Min. Typ. 11 - 23 22 - 46 15 20 10 5 10 13 175 Max. Units GHz GHz dBm dBc dBc dBc dB dB mA 2-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC598 v01.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT Output Power vs. Drive Level 20 Output Power vs. Temperature @ 5 dBm Drive Level 20 OUTPUT POWER (dBm) 15 OUTPUT POWER (dBm) 15 2 0 dBm +3 dBm +5 dBm +8 dBm +10 dBm 10 10 5 +25 C +85 C -55 C 5 0 14 18 22 26 30 34 38 42 46 FREQUENCY (GHz) 0 14 18 22 26 30 34 38 42 46 FREQUENCY (GHz) Output Power vs. Supply Voltage @ 5 dBm Drive Level 20 Isolation @ 5 dBm Drive Level 20 OUTPUT POWER (dBm) 15 OUTPUT POWER (dBm) 10 0 F0 2F0 3F0 4F0 10 -10 5 +4.5V +5V +5.5V -20 0 14 18 22 26 30 34 38 42 46 FREQUENCY (GHz) -30 14 18 22 26 30 34 38 42 46 FREQUENCY (GHz) Output Power vs. Input Power 20 OUTPUT POWER (dBm) 15 10 5 22GHz 26GHz 40GHz 0 0 2 4 6 8 10 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2-2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP HMC598 v01.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25 C +85 C -55 C Input Return Loss vs. Temperature RETURN LOSS (dB) 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP 0 -5 -10 -15 -20 -25 -30 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) +25 C +85 C -55 C 14 18 22 26 30 34 38 42 46 FREQUENCY (GHz) Supply Current vs. Input Power 200 190 180 Idd (mA) 170 160 150 140 0 2 4 6 8 10 INPUT POWER (dBm) Absolute Maximum Ratings RF Input (vdd1, 2, 3 = +5v) Supply voltage (vdd1,2, 3) channel Temperature continuous Pdiss (T= 85 °c) (derate 12.7 mW/°c above 85 °c) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +10 dBm +6 vdc 175 °c 1.14 W 79 °c/W -65 to +150 °c -55 to +85 °c Typical Supply Current vs. Vdd1, Vdd2, Vdd3 vdd1, 2, 3 (vdc) 4.5 5.0 5.5 Idd1 + Idd2 + Idd3(mA) 170 175 180 note: Multiplier will operate over full voltage range shown above. ELEcTROSTATIc SEnSITIvE DEvIcE OBSERvE HAnDLInG PREcAUTIOnS 2-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC598 v01.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT Outline Drawing 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP Interface Schematic Die Packaging Information Standard GP-1 (Gel Pack) [1] Alternate [2] — [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] Reference this suffix only when ordering alternate die packaging. Pin Description Pin number 1 Function RFIn Description Pin is Ac coupled and matched to 50 Ohms. 2-4 vdd1, vdd2, vdd3 Power supply voltage. See Assembly Diagram for external components. 5 RFOUT Pin is Ac coupled and matched to 50 Ohms. 6, 7 vgg2, vgg1 Gate control for multiplier. Please follow “MMIc Amplifier Biasing Procedure” Application note. See Assembly Diagram for required external components. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2-4 HMC598 v01.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT Assembly Diagram 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP 2-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC598 v01.0809 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMc general Handling, Mounting, Bonding note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length