HMC605LP3

HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC605LP3 / HMC605LP3E is ideal for: • Wireless Infrastructure • Customer Premise Equipment • Fixed Wireless • WiMAX & WiBro • Tower Mounted Amplifiers Features Noise Figure: 1.1 dB Output IP3: +31 dBm Gain: 20 dB Low Loss & Failsafe Bypass Path Single Supply: +3V or +5V 50 Ohm Matched Input / Output Functional Diagram General Description The HMC605LP3 / HMC605LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers that integrate a low loss LNA bypass path on the IC. The amplifier is ideal for WiBro & WiMAX receivers operating between 2.3 and 2.7 GHz and provides 1.1 dB noise figure, 20 dB of gain and +31 dBm output IP3 from a single supply of +5V @ 74 mA. Input and output return losses are 14 and 15 dB respectively with no external matching components required. A single control line (Vctl) is used to switch between LNA mode and a low 2 dB loss bypass mode and reduces the current consumption to 10 μA. The HMC605LP3 is failsafe and will default to the bypass mode with no DC power applied. Electrical Specifi cations, TA = +25° C, Vdd = +5V LNA Mode Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB)* Output Third Order Intercept (IP3)* (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) LNA Mode to Bypass Mode Swtiching Speed Bypass Mode to LNA Mode 60 ns * P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN. 17.5 Typ. 2.3 - 2.7 20.5 0.012 1.1 14 15 33 17 31 74 90 0.01 6.0 16 1.3 13 13 -3.0 Max. Min. Typ. 2.3 - 2.7 -2.0 0.002 Max. GHz dB dB / °C dB dB dB dB dBm dBm mA ns Bypass Mode Units 8 - 230 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LNA – Gain, Noise Figure & Power vs. Supply Voltage @ 2.5 GHz 25 2.5 LNA Broadband Gain & Return Loss 30 20 RESPONSE (dB) 10 0 -10 -20 -30 -40 1 2 3 4 5 6 FREQUENCY (GHz) S21 S11 S22 8 2 NOISE FIGURE (dB) 1.5 GAIN (dB), P1dB (dBm) 20 15 10 1 5 Gain P1dB Noise Figure 0.5 0 3 3.5 4 Vdd (Vdc) 4.5 5 0 LNA Gain vs. Temperature 24 LNA Noise Figure vs. Temperature 1.6 22 NOISE FIGURE (dB) 1.2 GAIN (dB) 20 0.8 18 +25C +85C -40C 0.4 16 +25C -40C +85C 14 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 0 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 LNA Gain vs. Vdd 24 LNA Noise Figure vs. Vdd 1.5 20 NOISE FIGURE (dBm) 22 1.3 GAIN (dB) 1.1 18 0.9 3V 5V 16 +3V +5V 0.7 14 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 0.5 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 231 LOW NOISE AMPLIFIERS - SMT HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz 8 LOW NOISE AMPLIFIERS - SMT LNA Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2.3 +25C +85C -40C LNA Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2.3 +25C +85C -40C 2.3 2.4 2.5 2.5 2.5 2.6 2.6 2.7 2.3 2.4 2.5 2.5 2.5 2.6 2.6 2.7 FREQUENCY (GHz) FREQUENCY (GHz) LNA Output IP3 vs. Temperature 35 LNA Output IP3 vs. Vdd 40 35 30 33 IP3 (dBm) 31 IP3 (dBm) 25 20 +3V +5V 29 +25C -40C +85C 27 15 10 2.3 25 2.3 2.3 2.4 2.5 2.5 2.5 2.6 2.6 2.7 2.3 2.4 2.5 2.5 2.5 2.6 2.6 2.7 FREQUENCY (GHz) FREQUENCY (GHz) LNA Psat vs. Temperature 24 +25C +85C -40C LNA Output P1dB vs. Temperature 24 +25C +85C -40C 22 PSAT (dBm) 22 P1dB (dBm) 20 20 18 18 16 16 14 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 14 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 8 - 232 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LNA Output P1dB vs. Vdd 20 LNA Reverse Isolation vs. Temperature 0 8 LOW NOISE AMPLIFIERS - SMT 8 - 233 16 -10 12 ISOLATION (dB) P1dB (dBm) -20 8 +3V +5V +25C +85C -40C -30 4 0 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 -40 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 Bypass Mode Broadband Insertion Loss & Return Loss 0 Bypass Mode Insertion Loss vs. Temperature 0 -10 RESPONSE (dB) INSERTION LOSS (dB) -1 -2 +25C +85C -40C -20 -3 -30 S21 S11 S22 -4 -40 1 2 3 4 5 6 FREQUENCY (GHz) -5 2.3 2.4 2.5 FREQUENCY (GHz) 2.6 2.7 Bypass Mode Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2.3 +25C +85C -40C Bypass Mode Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2.3 +25C +85C -40C 2.3 2.4 2.5 2.5 2.5 2.6 2.6 2.7 2.3 2.4 2.5 2.5 2.5 2.6 2.6 2.7 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz 8 LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) (Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 13.7 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature LNA Mode Bypass Mode +8 Vdc +15 dBm +30 dBm 150 °C 890 mW 73 °C/W -65 to +150° C -40 to +85° C Typical Supply Current vs. Vdd Vdd (Vdc) +5 +3 Idd (mA) 74 28 Truth Table LNA Mode Bypass Mode Vctl = Vdd ±0.3V Vctl= 0V ±0.3V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC605LP3 HMC605LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 605 XXXX 605 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 8 - 234 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Pin Descriptions Pin Number 1, 2, 5, 6, 8, 12, 13 3 Function N/C Description No connection necessary. These pins may be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. See application circuit. Interface Schematic 8 LOW NOISE AMPLIFIERS - SMT 8 - 235 RFIN 4, 7, 9, 11, 15 GND These pins must be connected to RF/DC ground. 10 RFOUT This pin is AC coupled and matched to 50 Ohms. 14 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. 16 Vctl Mode Control Voltage. See truth table. Application Circuit Components C1, C2 C3 Value 100pF 10KpF F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 117160 [1] Item J1 - J2 J3 - J6 C1, C2 C3 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 100 pF Capacitor, 0402 Pkg. 10 KpF Capacitor, 0402 Pkg. HMC605LP3 / HMC605LP3E Amplifier 117158 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 8 - 236 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Notes: 8 LOW NOISE AMPLIFIERS - SMT F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 237