HMC606

HMC606 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.0109 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications The HMC606 is ideal for: • Radar, EW & ECM • Microwave Radio • Test Instrumentation • Military & Space • Fiber Optic Systems Features Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ohm Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm Functional Diagram General Description The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vcc1= Vcc2= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Phase Noise @ 100 Hz Phase Noise @ 1 kHz Phase Noise @ 10 kHz Phase Noise @ 1 MHz Supply Current 12 11 Min. Typ. 2 - 12 14.0 ±1.0 0.021 4.5 20 15 15 18 27 -140 -150 -160 -170 64 95 10 10 Max. Min. Typ. 12 - 18 13 ±1.0 0.25 6.5 22 15 13 15 22 -140 -150 -160 -170 64 95 Max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dBm dBc/Hz dBc/Hz dBc/Hz dBc/Hz mA 1 - 102 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.0109 Gain & Return Loss 20 Gain vs. Temperature 20 18 1 LOW NOISE AMPLIFIERS - CHIP 1 - 103 10 RESPONSE (dB) GAIN (dB) S21 S11 S22 16 14 0 12 10 8 6 +25C +85C -55C -10 -20 4 2 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Power Compression 20 Pout (dBm), Gain (dB), PAE (%) Noise Figure vs. Temperature 14 12 +25C +85C -55C 15 NOISE FIGURE (dB) Output Power Gain PAE 10 8 6 4 2 0 10 5 0 -5 -15 -10 -5 Pin (dBm) 0 5 10 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.0109 1 LOW NOISE AMPLIFIERS - CHIP P1dB vs. Temperature 20 18 16 14 P1dB (dBm) Psat vs. Temperature 25 23 21 19 Psat (dBm) +25C +85C -55C 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) 17 15 13 11 9 7 5 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 20 15 10 5 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Phase Noise @ 12 GHz 0 -20 PHASE NOISE (dBc/Hz) -40 -60 -80 -100 -120 -140 -160 -180 1 10 10 2 10 3 10 4 10 5 10 6 FREQUENCY (Hz) Phase Noise at P1dB @ 12 GHz 0 -20 PHASE NOISE (dBc/Hz) -40 -60 -80 Phase Noise at Psat @ 12 GHz 0 -20 PHASE NOISE (dBc/Hz) -40 -60 -80 -100 -120 -140 -160 -180 1 10 10 2 -100 -120 -140 -160 10 3 10 4 10 5 10 6 -180 1 10 10 2 10 3 10 4 10 5 10 6 FREQUENCY (Hz) FREQUENCY (Hz) 1 - 104 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Absolute Maximum Ratings Vdd1= Vdd2= 5V RF Input Power (RFIN) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 14.6 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature 7V +15 dBm 175 °C 1.32 W 68.37 °C/W -65 to +150 °C -55 to +85 °C v02.0109 Typical Supply Current vs. Vcc1, Vcc2 Vcc1= Vcc2 (V) +4.5 +5.0 +5.5 Icc1 + Icc2 (mA) 53 64 74 1 LOW NOISE AMPLIFIERS - CHIP 1 - 105 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.0109 1 LOW NOISE AMPLIFIERS - CHIP Pad Descriptions Pad Number 1 Function RFIN Description This Pad is AC coupled and matched to 50 Ohms. Interface Schematic 2, 4 Vcc1, Vcc2 Vcc1= Vcc2= 5V 3 RFOUT This Pad is AC coupled and matched to 50 Ohms. Assembly Diagram 1 - 106 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) v02.0109 1 LOW NOISE AMPLIFIERS - CHIP 1 - 107 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible