HMC606LC5_08

HMC606LC5 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.1207 4 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC606LC5 is ideal for: Features Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 13.5 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ohm Matched Input/Output 32 Lead Ceramic 5x5mm SMT Package: 25mm2 • Radar, EW & ECM • Microwave Radio • Test Instrumentation • Military & Space • Fiber Optic Systems Functional Diagram General Description The HMC606LC5 is a GaAs InGaP HBT MMIC Distributed Amplifier housed in a leadless 5x5 mm surface mount package which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606LC5 provides 13.5 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606LC5 amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifi cations, TA = +25° C, Vcc1= Vcc2= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Phase Noise @ 100 Hz Phase Noise @ 1 kHz Phase Noise @ 10 kHz Phase Noise @ 1 MHz Supply Current 12 10.5 Min. Typ. 2 - 12 13.5 ±1.0 0.021 5 20 15 15 17 27 -140 -150 -160 -170 64 95 10 9.5 Max. Min. Typ. 2 - 18 12.5 ±1.0 0.024 7 18 15 13 15 22 -140 -150 -160 -170 64 95 Max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dBm dBc/Hz dBc/Hz dBc/Hz dBc/Hz mA 4 - 212 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606LC5 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.1207 Gain & Return Loss 20 Gain vs. Temperature 20 4 LOW NOISE AMPLIFIERS - SMT 4 - 213 10 RESPONSE (dB) S21 S11 S22 16 0 GAIN (dB) 12 -10 8 +25C +85C -40C -20 4 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Power Compression 20 Pout (dBm), Gain (dB), PAE (%) Noise Figure vs. Temperature 14 12 15 NOISE FIGURE (dB) 10 8 6 4 2 0 -10 -5 Pin (dBm) 0 5 10 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C 10 5 0 Output Power Gain PAE -5 -15 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606LC5 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.1207 4 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 20 Psat vs. Temperature 25 16 P1dB (dBm) Psat (dBm) 21 12 +25C +85C -40C 17 +25C +85C -40C 8 13 4 9 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) 5 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 20 15 10 5 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Phase Noise @ 12 GHz 0 -30 PHASE NOISE (dBc/Hz) -60 -90 -120 -150 -180 1 10 10 2 10 3 10 4 10 5 10 6 FREQUENCY (Hz) Phase Noise at P1dB @ 12 GHz 0 -30 PHASE NOISE (dBc/Hz) -60 -90 Phase Noise at Psat @ 12 GHz 0 -30 PHASE NOISE (dBc/Hz) -60 -90 -120 -150 -180 1 10 -120 -150 -180 1 10 10 2 10 3 10 4 10 5 10 6 10 2 10 3 10 4 10 5 10 6 FREQUENCY (Hz) FREQUENCY (Hz) 4 - 214 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606LC5 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Absolute Maximum Ratings Vcc1= Vcc2 RF Input Power (RFIN) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 6 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature 7V +15 dBm 175 °C 0.55 W 169.5 °C/W -65 to +150 °C -40 to +85 °C v02.1207 Typical Supply Current vs. Vcc1, Vcc2 Vcc1, Vcc2 (V) +4.5 +5.0 +5.5 Icc1 + Icc2 (mA) 53 64 71 4 LOW NOISE AMPLIFIERS - SMT 4 - 215 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606LC5 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.1207 4 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 3, 7 - 15, 17 - 19, 23 - 32 Function Description No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic N/C 2, 16 Vcc1, Vcc2 Power supply voltage for the amplifier. 4, 6, 20, 22, Ground Paddle GND Ground paddle must be connected to RF/DC ground. 5 RFIN This pin is AC coupled and matched to 50 Ohms. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. 4 - 216 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC606LC5 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz v02.1207 Evaluation PCB 4 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 117156 [1] Item J1 - J2 J3 - J4 C1, C2 C3, C4 C5, C6 U1 PCB [2] Description SRI K Connector 2mm Molex Header 4.7 μF Capacitor, Tantalum 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. HMC606LC5 117325 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 217