HMC607

HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Features High Isolation: >50 dB @ 10 GHz Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz Non-Reflective Design Die Size: 2.05 x 1.1 x 0.1 mm Typical Applications The HMC607 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military Radios, Radar & ECM 4 SWITCHES - CHIP • Space Systems • Test Instrumentation Functional Diagram General Description The HMC607 is a broadband high isolation nonreflective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features >55 dB isolation at lower frequencies and >45 dB at higher frequencies. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Insertion Loss Frequency DC - 6 GHz DC - 10 GHz DC - 15 GHz DC - 6 GHz DC - 10 GHz DC - 15 GHz “On State” “Off State” DC - 6 GHz DC - 15 GHz DC - 6 GHz DC - 15 GHz 0.5 - 15 GHz 0.5 - 15 GHz 21 44 55 50 45 Min. Typ. 1.4 1.7 2.7 65 60 55 17 11 13 17 26 49 Max. 1.7 2.5 3.4 Units dB dB dB dB dB dB dB dB dB dB dBm dBm Isolation* Return Loss Return Loss RF1, RF2 Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) *Isolation data taken with probe on the die DC - 15 GHz 3 5 ns ns 4 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Insertion Loss 0 Isolation* 0 -15 ISOLATION (dB) -30 -45 -60 -75 -90 RF1 RF2 INSERTION LOSS (dB) -1 -2 +25 C +85 C -55 C -3 4 0 3 6 9 12 15 FREQUENCY (GHz) -4 -5 0 3 6 9 12 15 FREQUENCY (GHz) Return Loss -5 RFC RF1, RF2 on RF1, RF2 off 0.1 and 1 dB Input Compression Point 30 COMPRESSION POINT (dBm) RETURN LOSS (dB) 25 -15 20 0.1 dB Compression Point 1 dB Compression Point -25 15 -35 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 10 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 Input Third Order Intercept Point 60 55 50 IP3 (dBm) 45 40 35 30 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 +25 C +85 C -55 C *Isolation data taken with probe on the die For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 33 SWITCHES - CHIP HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Absolute Maximum Ratings RF Input Power (A, A, B, B = 0/-5V) (0.5 - 6 GHz) Control Voltage Range (A, A, B, B) Channel Temperature Thermal Resistance (RTH) (junction to lead) +30 dBm (@ +50 °C) +1V to -7.5 Vdc 150 °C 94 °C/W -65 to +150 °C -55 to +85 °C Control Voltages State Low High Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 45 uA Typ. 4 SWITCHES - CHIP Storage Temperature Operating Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Truth Table Control Input B Low High High Low B High Low Low High A Low High Low High A High Low High Low Signal Path State RFC to RF1 ON OFF OFF ON RFC to RF2 OFF ON OFF ON Caution: Do not “Hot Switch” power levels greater than +27 dBm (A, A, B, B = 0/-5V). Suggested Driver Circuit for Single Line Control 4 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Outline Drawing 4 SWITCHES - CHIP Die Packaging Information [1] Standard WP-17 (Waffle Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD 7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS. 8. OVERALL DIE SIZE ±.002” Pad Descriptions Pad Number 1, 4, 7 Function RF1, RFC, RF2 Description This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic 2, 10 3, 11 5, 8 6, 9 B B A A See truth table and control voltage table. Alternate A & B control pads provided. Die Bottom GND Die bottom must be connected to RF ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 35 HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Assembly Diagram 4 SWITCHES - CHIP 4 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 4 SWITCHES - CHIP 4 - 37 Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible