HMC608LC4_10

HMC608LC4 v02.1208 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Features output ip3: +33 dBm saturated power: +27.5 dBm @ 23% pAe Gain: 29.5 dB supply: +5V @ 310 mA 50 ohm matched input/output roHs Compliant 4x4 mm smT package Typical Applications The HmC608lC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military End-Use 9 Amplifiers - lineAr & power - smT Functional Diagram General Description The HmC608lC4 is a high dynamic range GaAs pHemT mmiC medium power Amplifier housed in a leadless “pb free” smT package. The amplifier has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifications in the table below are shown for the amplifier operating in high gain mode. operating from 9.5 to 11.5 GHz, the amplifier provides 29.5 dB of gain, +27.5 dBm of saturated power and 23% pAe from a +5V supply voltage. noise figure is 6 dB while output ip3 is +33 dBm. The rf i/os are DC blocked and matched to 50 ohms for ease of use. The HmC608lC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2] parameter frequency range Gain [3] Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd = idd1 +idd2 +idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] [[1] Adjust Vgg between -3 to 0V to achieve idd = 310 mA typical. [2] Vpd= ground for high gain mode, Vpd = open for low gain mode. [3] in low gain mode, typical gain is 22 dB and typical current is 67 mA. 23 27 min. Typ. 9.5 - 11.5 29.5 0.02 13 19 27 27.5 33 6.0 310 350 0.03 max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC608LC4 v02.1208 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Gain vs. Temperature 34 Broadband Gain & Return Loss 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 7 8 9 10 32 S21 S11 S22 RESPONSE (dB) GAIN (dB) 30 28 +25C +85C -40C 26 9 11 11.5 24 11 12 13 14 9 9.5 10 10.5 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -4 RETURN LOSS (dB) +25C +85C -40C -8 -12 +25C +85C -40C -16 -20 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) P1dB vs. Temperature 35 30 25 P1dB (dBm) 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 35 30 25 Psat (dBm) 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC608LC4 v01.0707 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Noise Figure vs. Temperature 10 Output IP3 vs. Temperature 40 NOISE FIGURE (dB) 30 IP3 (dBm) 8 6 9 Amplifiers - lineAr & power - smT 20 +25C +85C -40C 4 +25C +85C -40C 10 2 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) Gain, Power & Output IP3 vs. Supply Voltage @ 10.3 GHz GAIN (dB), P1dB(dBm), Psat (dBm), IP3(dBm) 35 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 +25C +85C -40C 33 31 Gain P1dB Psat IP3 29 27 25 4.5 5 Vdd Supply Voltage (Vdc) 5.5 -70 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) Power Compression @ 10.3 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -20 Pout Gain PAE Power Dissipation 4 3.5 3 2.5 2 1.5 1 -30 9 GHz 9.5 GHz 10 GHz 10.5 GHz 11.0 GHz 11.5 GHz POWER DISSIPATION (W) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -25 -20 -15 -10 -5 0 Pin (dBm) INPUT POWER (dBm) 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC608LC4 v01.0707 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Low Gain Mode, Gain vs. Temperature 30 Low Gain Mode, Broadband Gain & Return Loss 25 15 RESPONSE (dB) 5 -5 -15 -25 -35 7 8 9 10 11 12 13 14 FREQUENCY (GHz) S21 S11 S22 26 GAIN (dB) 22 18 +25C +85C -40C 14 9 11 11.5 10 9 9.5 10 10.5 FREQUENCY (GHz) Low Gain Mode, Input Return Loss vs. Temperature 0 -4 RETURN LOSS (dB) Low Gain Mode, Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C -8 -12 -16 -20 -24 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) rf input power (rfin)(Vdd = +5Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 22.18 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature 7 Vdc -4.0 to -1.0 Vdc +10 dBm 175 °C 2w 45 °C/w -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 idd (mA) 300 310 325 Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 310 mA at +5V. eleCTrosTATiC sensiTiVe DeViCe OBSERVE HANDLING PRECAUTIONS F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-4 Amplifiers - lineAr & power - smT HMC608LC4 v02.1208 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Outline Drawing 9 Amplifiers - lineAr & power - smT noTes: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. Dimensions Are in inCHes (millimeTers). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Pin Descriptions pin number function Description Gate control for amplifier. Adjust to achieve id of 310 mA. please follow “mmiC Amplifier Biasing procedure” Application note. external bypass capacitors of 100 pf, 1000 pf and 2.2 µf are required. no connection required. These pins may be connected to rf/DC ground without affecting performance. package bottom has an exposed metal paddle that must also be connected to rf/DC ground. This pin is AC coupled and matched to 50 ohms. This pin is AC coupled and matched to 50 ohms. interface schematic 1 Vgg 2, 3, 7 - 12, 16 - 18, 22, 24 4, 6, 13, 15 5 14 n/C GnD rfin RFOUT 21, 20, 19 Vdd1, Vdd2, Vdd3 power supply Voltage for the amplifier. external bypass capacitors of 100 pf, 1000pf, and 2.2 µf are required. 23 Vpd High gain (connect to ground) / low gain mode pin control (open circuit). external bypass capacitors of 100 pf, 1000 pf and 2.2 µf are required. 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC608LC4 v02.1208 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Evaluation PCB 9 Amplifiers - lineAr & power - smT 9-6 List of Materials for Evaluation PCB 112763 [1] item J1, J2 J3 - J8 C1 - C6 C6 - C10 C11 - C15 U1 pCB [2] Description pC mount smA connector DC pin 100 pf capacitor, 0402 pkg. 1,000 pf Capacitor, 0603 pkg. 2.2µf Capacitor, Tantalum HmC608lC4 Amplifier 112761 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350. The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com