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HMC609LC4

HMC609LC4

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC609LC4 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC609LC4 数据手册
HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC609LC4 is ideal for: • Fixed Microwave • Test & Measurement Equipment • Radar & Sensors • Military & Space Features Excellent Gain Flatness: ±0.4 dB High Gain: 20 dB Low Noise Figure: 3.5 dB Output IP3: +36.5 dBm 50 Ohm Matched & DC Blocked RF I/Os RoHS Compliant 4x4 mm SMT package Functional Diagram General Description The HMC609LC4 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC609LC4 features extremely flat performance characteristics including 20 dB of small signal gain, 3.5 dB of noise figure and output IP3 of +36.5 dBm across the operating band. This 50 Ohm matched amplifier does not require any external matching components. The HMC609LC4 is compatible with high volume surface mount manufacturing techniques, and the RF I/Os are DC blocked for further ease of integration. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170mA [1] Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd1 + Idd2) [1] Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA 18.5 17 Min. Typ. 2-4 20 0.015 3.5 17 15 21.5 23 36.5 170 220 0.02 5.5 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 5 - 204 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 S21 S11 S22 Gain vs. Temperature 22 21 20 GAIN (dB) 19 18 17 16 15 +25C +85C -40C 5 LOW NOISE AMPLIFIERS - SMT 5 - 205 5 0 -5 -10 -15 -20 -25 -30 1 2 3 4 5 6 7 8 9 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C P1dB vs. Temperature 26 25 24 23 P1dB (dBm) 22 21 20 19 18 17 16 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 26 25 24 23 Psat (dBm) 22 21 20 19 18 17 16 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 LOW NOISE AMPLIFIERS - SMT Power Compression @ 3 GHz 25 Pout (dBm), GAIN (dB), PAE (%) Output IP3 vs. Temperature 40 39 20 OIP3 (dBm) 38 37 15 36 35 34 33 +25C +85C -40C 10 Pout Gain PAE 5 32 31 30 8 2 2.25 2.5 2.75 3 0 -10 -8 -6 -4 -2 0 2 4 6 3.25 3.5 3.75 4 INPUT POWER (dBm) FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) +25C +85C -40C Reverse Isolation vs. Temperature 0 -5 -10 -15 ISOLATION (dB) -20 -25 -30 -35 -40 -45 -50 -55 -60 +25C +85C -40C 7 6 5 4 3 2 1 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) 5 - 206 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +6.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 16.7 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature 7 Vdc +15 dBm 175 °C 1.1 W 60 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.5 +6.0 +6.5 Idd (mA) 160 170 180 5 LOW NOISE AMPLIFIERS - SMT 5 - 207 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 5 - 8, 10 - 14, 18 - 20, 22, 24 Function N/C Description This pin may be connected to RF/DC ground. Performance will not be affected. Package bottom must also be connected to RF/DC ground This pin is AC coupled and matched to 50 Ohms from 2 - 4 GHz. Interface Schematic 2, 4, 15, 17 GND 3 RFIN 9 Vgg Gate supply voltage for the amplifier. (External bypass capacitors are required.) 16 RFOUT This pin is AC coupled and matched to 50 Ohms from 2 - 4 GHz. 21, 23 Vdd1, Vdd2 Power Supply Voltage for the amplifier. (External bypass capacitors are required.) Application Circuit Component C1 - C3 C4 - C6 C7 - C9 Value 100 pF 1,000 pF 2.2 μF 5 - 208 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Evaluation PCB 5 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 117510 Item J1 - J2 J3 - J7 C1 - C3 C4 - C6 C7 - C9 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum HMC609LC4 Amplifier 117515 Evaluation PCB, 10 mils [1] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 209
HMC609LC4
1. 物料型号: - HMC609LC4

2. 器件简介: - HMC609LC4是一款基于砷化镓(GaAs)的伪高电子迁移率晶体管(PHEMT)单片微波集成电路(MMIC)低噪声放大器(LNA),工作频率范围为2至4GHz。该器件具有非常平坦的性能特性,包括20dB的小信号增益、3.5dB的噪声系数和+36.5dBm的输出IP3。

3. 引脚分配: - 引脚1、5、8、10-14、18-20、22、24:无功能(N/C),这些引脚可以连接到射频/直流地线,不影响性能。 - 引脚2、4、15、17:地线(GND),封装底部也必须连接到射频/直流地线。 - 引脚3:射频输入(RFIN),交流耦合,2-4GHz范围内匹配到50欧姆。 - 引脚9:Vgg(栅极供电电压),放大器的栅极供电电压,需要外部旁路电容器。 - 引脚16:射频输出(RFOUT),交流耦合,2-4GHz范围内匹配到50欧姆。 - 引脚21、23:Vdd1、Vdd2(电源电压),放大器的电源电压,需要外部旁路电容器。

4. 参数特性: - 频率范围:2-4GHz - 增益:17-20dB - 温度变化下的增益变化:0.015-0.02dB/°C - 噪声系数:3.5dB(典型值),最大5.5dB - 输入回波损耗:17dB - 输出回波损耗:15dB - 1dB压缩输出功率(P1dB):18.5-21.5dBm - 饱和输出功率(Psat):23dBm - 输出三阶截取点(IP3):+36.5dBm - 供电电流(Idd1 + Idd2):170-220mA

5. 功能详解: - HMC609LC4具有优异的增益平坦性(±0.4dB)、高增益(20dB)、低噪声系数(3.5dB)和输出IP3(+36.5dBm)。该放大器50欧姆匹配,无需外部匹配元件,并且射频输入/输出端直流阻断,便于集成。

6. 应用信息: - 适用于固定微波、测试与测量设备、雷达与传感器、军事与航天等领域。

7. 封装信息: - HMC609LC4采用4x4mm的表面贴装技术(SMT)封装,符合RoHS标准。
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