HMC609LC4_09

HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC609LC4 is ideal for: • Fixed Microwave • Test & Measurement Equipment • Radar & Sensors • Military & Space Features Excellent Gain Flatness: ±0.4 dB High Gain: 20 dB Low Noise Figure: 3.5 dB Output IP3: +36.5 dBm 50 Ohm Matched & DC Blocked RF I/Os RoHS Compliant 4x4 mm SMT package Functional Diagram General Description The HMC609LC4 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC609LC4 features extremely flat performance characteristics including 20 dB of small signal gain, 3.5 dB of noise figure and output IP3 of +36.5 dBm across the operating band. This 50 Ohm matched amplifier does not require any external matching components. The HMC609LC4 is compatible with high volume surface mount manufacturing techniques, and the RF I/Os are DC blocked for further ease of integration. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170mA [1] Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd1 + Idd2) [1] Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA 18.5 17 Min. Typ. 2-4 20 0.015 3.5 17 15 21.5 23 36.5 170 220 0.02 5.5 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 8 - 230 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Broadband Gain & Return Loss [1] 25 20 15 Broadband Gain & Return Loss [2] 25 20 15 RESPONSE (dBm) 10 5 0 -5 -10 -15 -20 -25 -30 S21 S11 S22 8 LOW NOISE AMPLIFIERS - SMT 8 - 231 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 -30 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) S21 S11 S22 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) Gain vs. Temperature [1] 22 21 20 GAIN (dB) Gain vs. Temperature [2] 22 21 20 GAIN (dB) 19 18 17 16 15 +25C +85C -40C 19 18 17 16 15 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Input Return Loss vs. Temperature [1] 0 Input Return Loss vs. Temperature [2] 0 -5 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) 3.5 3.75 4 -10 +25C +85C -40C -10 -15 -20 -25 -30 -35 -20 -30 -40 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) -40 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) [1] Vdd = 6V [2] Vdd = 5V F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 8 LOW NOISE AMPLIFIERS - SMT Output Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) Output Return Loss vs. Temperature [2] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 2.25 2.5 2.75 3 +25C +85C -40C -10 -15 -20 -25 -30 +25C +85C -40C 3.25 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) Psat vs. Temperature [1] 26 25 24 23 Psat (dBm) Psat vs. Temperature [2] 26 25 24 23 Psat (dBm) 22 21 20 19 18 17 16 +25C +85C -40C 22 21 20 19 18 17 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) P1dB vs. Temperature [1] 26 25 24 23 P1dB (dBm) P1dB vs. Temperature [2] 26 25 24 23 P1dB (dBm) 22 21 20 19 18 17 16 +25C +85C -40C 22 21 20 19 18 17 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) [1] Vdd = 6V [2] Vdd = 5V 8 - 232 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Output IP3 vs. Temperature [1] 40 Output IP3 vs. Temperature [2] 40 39 8 LOW NOISE AMPLIFIERS - SMT 8 - 233 38 OIP3 (dBm) 38 37 IP3 (dBm) 36 36 35 34 33 +25C +85C -40C 34 +25C +85C -40C 32 32 31 30 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 30 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature [1] 10 +25C +85C -40C Noise Figure vs. Temperature [2] 10 9 8 NOISE FIGURE (dB) 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25C +85C -40C 6 4 2 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature [1] 0 -10 ISOLATION (dB) Reverse Isolation vs. Temperature [2] 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 2 2.25 2.5 2.75 3 +25C +85C -40C -20 -30 -40 -50 -60 +25C +85C -40C 3.25 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) [1] Vdd = 6V [2] Vdd = 5V F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 8 25 Power Compression @ 3 GHz Pout (dBm), GAIN (dB), PAE (%) LOW NOISE AMPLIFIERS - SMT 20 15 10 Pout Gain PAE 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +6.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 16.7 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature 7 Vdc +15 dBm 175 °C 1.1 W 60 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.5 +6.0 +6.5 Idd (mA) 160 170 180 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 8 - 234 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Outline Drawing 8 LOW NOISE AMPLIFIERS - SMT 8 - 235 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 5 - 8, 10 - 14, 18 - 20, 22, 24 2, 4, 15, 17 Function N/C Description This pin may be connected to RF/DC ground. Performance will not be affected. Package bottom must also be connected to RF/DC ground This pin is AC coupled and matched to 50 Ohms. Interface Schematic GND 3 RFIN 9 Vgg Gate supply voltage for the amplifier. (External bypass capacitors are required.) 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 21, 23 Vdd1, Vdd2 Power Supply Voltage for the amplifier. (External bypass capacitors are required.) Application Circuit Component C1 - C3 C4 - C6 C7 - C9 Value 100 pF 1,000 pF 2.2 μF 8 - 236 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 117510 [1] Item J1 - J2 J3 - J7 C1 - C3 C4 - C6 C7 - C9 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum HMC609LC4 Amplifier 117515 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 237