HMC609_10

HMC609 v03.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 1 AMPLIFIERS - LOW NOISE - CHIP Typical Applications The HMC609 is ideal for: • Fixed Microwave • Point-to-Multi-Point Radios • Test & Measurement Equipment • Radar & Sensors • Military & Space Features Excellent Gain Flatness: ±0.2 dB High Gain: 20.5 dB Low Noise Figure: 3 dB Output IP3: +36 dBm Output P1dB: +22 dBm 50 Ohm Matched Input/Output Die Size: 2.1 x 1.3 x 0.1 mm Functional Diagram General Description The HMC609 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 2 to 4 GHz. The HMC609 features extremely flat performance characteristics including 20 dB of small signal gain, 3.0 dB of noise figure and output IP3 of +36 dBm across the operating band. This versatile LNA is ideal for hybrid and MCM assemblies due to its compact size, consistent output power and DC blocked RF I/ O’s. All data is measured with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil). Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA * Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd1 + Idd2) *Adjust Vgg1 = Vgg2 between -1.5V to -0.5V (typ. -0.9V) to achieve total drain bias of 170mA 18 19 Min. Typ. 2-4 20.5 0.005 3 20 17 21 22 36 170 220 0.01 4 Max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 1 - 108 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC609 v03.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 -30 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 22 21 20 GAIN (dB) 19 18 17 16 15 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -55C 1 AMPLIFIERS - LOW NOISE - CHIP 1 - 109 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25C +85C -55C -10 -15 -20 -25 -30 2 2.25 2.5 2.75 3 +25C +85C -55C 3.25 3.5 3.75 4 FREQUENCY (GHz) P1dB vs. Temperature 26 25 24 23 P1dB (dBm) 22 21 20 19 18 17 16 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) +25C +85C -55C Psat vs. Temperature 26 25 24 23 Psat (dBm) 22 21 20 19 18 17 16 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) +25C +85C -55C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC609 v03.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 1 AMPLIFIERS - LOW NOISE - CHIP Power Compression @ 3 GHz 25 Pout (dBm), GAIN (dB), PAE (%) Output IP3 vs. Temperature 40 39 20 OIP3 (dBm) 38 37 15 36 35 34 33 +25C +85C -55C 10 Pout Gain PAE 5 32 31 30 2 2.25 2.5 2.75 3 0 -10 -8 -6 -4 -2 0 2 4 6 3.25 3.5 3.75 4 INPUT POWER (dBm) FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) +25C +85C -55C Reverse Isolation vs. Temperature 0 -5 -10 -15 ISOLATION (dB) -20 -25 -30 -35 -40 -45 -50 -55 -60 +25C +85C -55C 7 6 5 4 3 2 1 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) 1 - 110 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC609 v03.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 18 mW/°C above 85 °C) Thermal Resistance (channel to ground pad) Storage Temperature Operating Temperature 7 Vdc +15 dBm 175 °C 1.64 W 55 °C/W -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.5 +6.0 +6.5 Idd (mA) 160 170 180 1 AMPLIFIERS - LOW NOISE - CHIP 1 - 111 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.007” 3. TYPICAL BOND PAD IS 0.004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±0.002” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC609 v03.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 1 AMPLIFIERS - LOW NOISE - CHIP Pad Descriptions Pad Number 1 2, 5, 6, 10 Die Bottom Function RFIN Description This pad is AC coupled and matched to 50 Ohms. These pads & die bottom must be connected to RF/DC ground. Interface Schematic GND 3, 4 Vdd1, Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF & 0.1 μF are required. This pad is AC coupled and matched to 50 Ohms. 7 RFOUT 8, 9 Vgg2, Vgg1 Gates supply voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. Assembly Diagram 1 - 112 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC609 v03.0210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 1 Wire Bond 0.076mm (0.003”) RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible