HMC616LP3_10

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Features low Noise figure: 0.5 dB High Gain: 24 dB High output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3mm QfN package: 9 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC616lp3(e) is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radio • DAB receivers Functional Diagram General Description The HmC616lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 175 and 660 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The HmC616lp3(e) shares the same package and pinout with the HmC617lp3(e) and HmC618lp3(e) lNAs. The HmC616lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. The HmC616lp3(e) offers improved noise figure versus the previously released HmC356lp3(e). Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms* parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) 8 8.5 0.5 10 9 11 13 20 30 45 10 11 0.8 20 Vdd = +3V min. Typ. 175 - 230 22.5 15 max. min. Typ. 230 - 660 20 0.002 0.5 16 10 15 15.5 30 30 45 11 12.5 0.8 0.5 12 9 15 17.5 32 90 115 14 15.5 0.8 21 max. min. Typ. 175 - 230 24 15 Vdd = +5V max. min. Typ. 230 - 660 21 0.005 0.5 14 10 19 19.5 37 90 115 0.8 max. Units mHz dB dB/ °C dB dB dB dBm dBm dBm mA * rbias resistor sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Gain vs. Temperature [1] 24 Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 1.2 1.4 S11 S22 Vdd= 5V Vdd= 3V S21 7 Amplifiers - low Noise - smT 7-2 22 GAIN (dB) 20 +25C +85C - 40C 18 16 14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Gain vs. Temperature [2] 24 Input Return Loss vs. Temperature [1] 0 22 RETURN LOSS (dB) -5 +25C +85C - 40C GAIN (dB) 20 +25C +85C - 40C -10 18 16 -15 14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Output Return Loss vs. Temperature [1] 0 Reverse Isolation vs. Temperature [1] 0 -5 REVERSE ISOLATION (dB) RETURN LOSS (dB) -5 +25C +85C - 40C -10 -15 -20 -25 -30 -35 +25C +85C - 40C -10 -15 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 -40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz P1dB vs. Temperature 24 22 20 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] 1 0.9 NOISE FIGURE (dB) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.2 0.25 0.3 -40C +25 C Vdd=5V Vdd=3V +85C P1dB (dBm) Vdd=5V 18 16 14 12 10 0.2 Vdd=3V +25 C +85 C - 40 C 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) Psat vs. Temperature 24 22 20 Psat (dBm) 18 16 14 12 10 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Vdd=3V +25 C +85 C - 40 C Vdd=5V Output IP3 vs. Temperature Vdd=5V 40 36 IP3 (dBm) 32 28 Vdd=3V +25 C +85 C - 40 C 24 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 5.5 Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 5.5 Idd (mA) [1] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Idd (mA) HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Power Compression @ 400 MHz [2] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pout Gain PAE Power Compression @ 400 MHz [1] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Pout Gain PAE 7 Amplifiers - low Noise - smT NOISE FIGURE (dB) INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 500 MHz [1] 45 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE Power Compression @ 500 MHz [2] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Pout Gain PAE 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz 24 GAIN P1dB Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz 1 24 GAIN P1dB 1 GAIN (dB) & P1dB (dBm) 20 0.6 GAIN (dB) & P1dB (dBm) 22 0.8 NOISE FIGURE (dB) 22 0.8 20 0.6 18 0.4 18 0.4 16 Noise Figure 0.2 16 Noise Figure 0.2 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Input Return Loss Low Frequency Tune [1] 0 7 Amplifiers - low Noise - smT Gain Low Frequency Tune [1] 26 24 22 GAIN (dB) 20 18 16 14 0.15 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 Vdd=5V Vdd=3V -5 RETURN LOSS (dB) -10 -15 Vdd=5V Vdd=3V -20 -25 0.15 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 Output Return Loss Low Frequency Tune [1] 0 P1dB Low Frequency Tune [1] 22 20 18 Vdd=5V vdd=3V -5 RETURN LOSS (dB) P1dB (dBm) Vdd=5V Vdd=3V -10 16 14 12 -15 -20 10 8 -25 0.15 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 0.15 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 Output IP3 Low Frequency Tune [1] 40 36 32 IP3 (dBm) 28 24 20 16 0.15 Vdd=5V Vdd=3V Noise Figure Low Frequency Tune [1] [2] 1 0.9 NOISE FIGURE (dB) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Vdd=5V Vdd=3V 0.175 0.2 FREQUENCY (GHz) 0.225 0.25 0.15 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 [1] rbias = 2kΩ, l1 = 82 nH, l2 = 82 nH [2] measurement reference plane shown on evaluation pCB drawing. 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Gain, Noise Figure & Rbias @ 400 MHz 24 23 22 GAIN (dB) 21 20 19 18 Vdd=5V Vdd=3V Output IP3 vs. Rbias @ 400 MHz 40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500 1000 Rbias (Ohms) Vdd= 3V Vdd= 5V 7 1 0.9 0.8 NOISE FIGURE (dB) 0.7 0.6 0.5 0.4 0.3 0.2 17 16 10000 500 1000 10000 Rbias(Ohms) Output IP3 vs. Rbias @ 500 MHz 40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500 1000 Rbias (Ohms) Vdd= 3V Vdd= 5V Gain, Noise Figure & Rbias @ 500 MHz 21 0.7 20 0.6 NOISE FIGURE (dB) GAIN (dB) 19 0.5 18 0.4 17 Vdd=5V Vdd=3V 0.3 16 10000 500 1000 Rbias(Ohms) 0.2 10000 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 Amplifiers - low Noise - smT HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Amplifiers - low Noise - smT Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) rbias (Ω) min max recommended 2.7k 3V 1k [1] open Circuit 3.92k 4.7k 10k 820 5V 0 open Circuit 2k 3.92k 10k idd (mA) 27 31 33 39 73 84 91 95 [1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable. Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 8.93 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +6 V +10 dBm 150 °C 0.58 w 112 °C/w -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 3.92kΩ) Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 idd (mA) 20 30 40 80 90 100 Note: Amplifier will operate over full voltage range shown above. eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Outline Drawing 7 Amplifiers - low Noise - smT 616 XXXX 616 XXXX NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC616lp3 HmC616lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Amplifiers - low Noise - smT Pin Descriptions pin Number 1, 3 - 5, 7, 9, 10, 12 - 14, 16 2 function N/C rfiN Description No connection required. These pins may be connected to rf/DC ground without affecting performance. This pin is DC coupled. DC blocking capacitor required. see application circuit. This pin and ground paddle must be connected to rf/DC ground. interface schematic 6 GND 11 rfoUT This pin is matched to 50 ohms. 8 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply Voltage. Choke inductor and bypass capacitors are required. see application circuit. Application Circuit Components for Selected Frequencies Tuned frequency rbias l1 l2 175 - 230 mHz 2.0k ohms 82 nH 82 nH 230 - 660 mHz 3.92k ohms 47 nH 51 nH 7-9 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 120728 item J1, J2 J3, J4 C1 C2 C3 C4 l1 l2 r1 (rbias) U1 pCB [2] Description pCB mount smA rf Connector DC pin 10nf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 0.47 µf Capacitor, 0603 pkg. 100 pf Capacitor, 0402 pkg. 47 nH inductor, 0603 pkg. 51 nH inductor, 0402 pkg. 3.92 kΩ resistor, 0402 pkg. HmC616lp3(e) Amplifier 120616 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10