HMC618LP3_11

HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Features Noise figure: 0.75 dB Gain: 19 dB oip3: 36 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3mm smT package: 9 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC618lp3e is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femto Cells • public safety radios Functional Diagram General Description The HmC618lp3e is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC618lp3e shares the same package and pinout with the HmC617lp3e 0.55 - 1.2 GHz lNA. The HmC618lp3e can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. The HmC618lp3(e) offers improved noise figure versus the previously released HmC375lp3(e) and the HmC382lp3(e). Electrical Specifications TA = +25° C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) * rbias resistor sets current, see application circuit herein 14.5 19 Vdd = 5 Vdc min. Typ. 1200 - 1700 23 0.012 0.65 22.5 13 19 20.5 33.5 89 118 16.5 0.85 16 max. min. Typ. 1700 - 2000 19 0.008 0.75 18 12.5 20 20.5 35 89 118 18 1.1 13.5 max. min. Typ. 2000 - 2200 17 0.008 0.85 19.5 10 20 20.5 35.5 89 118 1.15 max. Units mHz dB dB/°C dB dB dB dBm dBm dBm mA 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Electrical Specifications parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) TA = +25° C, Rbias = 10K Ohm for Vdd1 = Vdd2 = 3V Vdd = 3 Vdc min. Typ. 1200 - 1700 18 22 0.009 0.8 26 14 10 15 16 28 47 65 12 1.1 15 max. min. Typ. 1700 - 2000 18 0.009 0.9 17 13 15 16 28 47 65 13 1.2 12.5 max. min. Typ. 2000 - 2200 15.8 0.009 0.9 19 11 15 16 28 47 65 1.2 max. Units mHz dB dB/°C dB dB dB dBm dBm dBm mA 7 Amplifiers - low Noise - smT 7-2 * rbias resistor sets current, see application circuit herein 1700 to 2200 MHz Tune Broadband Gain & Return Loss [1] [2] 25 S21 Gain vs. Temperature [1] 24 22 20 15 RESPONSE (dB) S22 Vdd=5V Vdd=3V GAIN (dB) 5 18 16 +25C +85C - 40C -5 -15 S11 14 12 -25 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.6 1.7 1.8 FREQUENCY (GHz) 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Gain vs. Temperature [2] 22 20 18 GAIN (dB) 16 14 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25C +85C - 40C Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) +25C +85C - 40C -10 -15 -20 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 Amplifiers - low Noise - smT 0 +25C +85C - 40C 1700 to 2200 MHz Tune Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 -5 -10 ISOLATION (dB) -15 -20 -25 -30 -35 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -40 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25C +85C - 40C -5 RETURN LOSS (dB) -10 -15 -20 Noise Figure vs Temperature [1] [2] [3] 1.6 1.4 NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -40C +25 C Vdd=5V Vdd=3V +85C Output P1dB vs. Temperature [1] [2] 24 22 20 P1dB (dBm) 18 16 14 12 10 1.6 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 +25C +85C - 40C Vdd=3V Vdd=5V Psat vs. Temperature [1] [2] 24 22 20 Psat (dBm) 18 Vdd=3V Vdd=5V Output IP3 vs. Temperature [1] [2] 40 38 36 IP3 (dBm) 34 32 30 28 26 24 1.6 1.7 Vdd=3V +25C +85C - 40C Vdd=5V 16 14 12 10 1.6 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 +25C +85C -40C 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm [3] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 1700 to 2200 MHz Tune Output IP3 and Idd vs. Supply Voltage @ 1750 MHz [1] 38 36 34 IP3 (dBm) 32 30 28 26 24 4.5 5 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 5.5 IP3 (dBm) Idd (mA) 38 36 34 32 30 28 26 24 2.7 3 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 3.3 Idd (mA) Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [1] 38 36 34 IP3 (dBm) 32 30 28 26 24 4.5 5 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 5.5 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [2] 38 36 34 IP3 (dBm) 32 30 28 26 24 2.7 3 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 3.3 Idd (mA) Power Compression @ 1750 MHz [1] 30 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 1750 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 20 20 10 10 0 Pout Gain PAE 0 Pout Gain PAE -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) INPUT POWER (dBm) [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 Amplifiers - low Noise - smT Output IP3 and Idd vs. Supply Voltage @ 1750 MHz [2] 7 Idd (mA) HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 Amplifiers - low Noise - smT 30 Pout (dBm), GAIN (dB), PAE (%) 20 1700 to 2200 MHz Tune Power Compression @ 2100 MHz [1] Power Compression @ 2100 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 20 10 10 0 Pout Gain PAE 0 Pout Gain PAE -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1750 MHz [1] 24 22 GAIN (dB) & P1dB (dBm) 20 18 16 Noise Figure GAIN P1dB Gain, Power & Noise Figure vs. Supply Voltage @ 1750 MHz [2] 1.2 1 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 5.5 24 22 20 18 16 14 12 2.7 GAIN P1dB Noise Figure 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 3.3 14 12 4.5 5 SUPPLY VOLTAGE (V) 3 SUPPLY VOLTAGE (V) Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [1] 24 22 GAIN (dB) & P1dB (dBm) 20 18 16 14 12 4.5 GAIN P1dB Noise Figure Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [2] 1.2 1 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 5.5 24 22 20 18 16 14 12 2.7 GAIN P1dB Noise Figure 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 3.3 5 SUPPLY VOLTAGE (V) 3 SUPPLY VOLTAGE (V) [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 1700 to 2200 MHz Tune Output IP3 vs. Rbias @ 1750 MHz 36 34 32 IP3 (dBm) 30 28 26 24 22 100 1000 Rbias (Ohms) 10000 Vdd=5V Vdd=3V 7 1.6 1.4 1.2 NOISE FIGURE (dB) 1 0.8 0.6 Vdd=5V Vdd=3V 22 21 20 GAIN (dB) 19 18 17 16 15 14 100 1000 Rbias(Ohms) 0.4 0.2 0 10000 Output IP3 vs. Rbias @ 2100 MHz 38 36 34 IP3 (dBm) 32 30 28 26 24 100 1000 Rbias (Ohms) 10000 Vdd=5V Vdd=3V Gain, Noise Figure vs. Rbias @ 2100 MHz 20 19 18 GAIN (dB) 17 16 15 14 100 1000 Rbias(Ohms) 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 10000 Vdd=5V Vdd=3V [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 Amplifiers - low Noise - smT Gain, Noise Figure vs. Rbias @ 1750 MHz HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 Amplifiers - low Noise - smT Gain vs. Temperature [1] 28 26 24 1200 to 1700 MHz Tune Gain vs. Temperature [2] 28 26 24 GAIN (dB) GAIN (dB) 22 20 18 16 1 1.1 1.2 +25C +85C - 40C 22 20 18 16 +25C +85C - 40C 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25C +85C -40C Input Return Loss vs. Temperature [2] 0 RETURN LOSS (dB) -10 +25 C +85 C - 40 C -20 -30 -40 1 1.1 1.2 FREQUENCY (GHz) 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 Output Return Loss vs. Temperature [1] 0 Output Return Loss vs. Temperature [2] 0 +25 C +85 C - 40 C RETURN LOSS (dB) RETURN LOSS (dB) 1.6 1.7 1.8 -5 +25C +85C -40C -5 -10 -10 -15 -15 -20 -20 1 1.1 1.2 1.3 1.4 1.5 1 1.1 1.2 FREQUENCY (GHz) 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 1200 to 1700 MHz Tune Reverse Isolation vs. Temperature [1] 0 7 Amplifiers - low Noise - smT 7-8 Reverse Isolation vs. Temperature [2] 0 -10 ISOLATION (dB) +25 C +85 C - 40 C -10 ISOLATION (dB) +25 C +85 C - 40 C -20 -20 -30 -30 -40 -40 -50 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 -50 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 Noise Figure vs. Temperature [1] 1.6 1.4 NOISE FIGURE (dB) Noise Figure vs. Temperature [2] 1.6 1.4 NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0 +25 C +85 C - 40 C 1.2 1 0.8 0.6 0.4 0.2 0 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 -40C +25 C +85C 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 Output P1dB vs. Temperature [1] 22 20 18 P1dB (dBm) 16 14 12 10 8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 +25C +85C - 40C Output P1dB vs. Temperature [2] 22 20 18 P1dB (dBm) 16 14 12 10 8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 +25 C +85 C - 40 C [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 Amplifiers - low Noise - smT Psat vs. Temperature [1] 22 20 18 Psat (dBm) 16 14 12 10 8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 +25C +85C -40C 1200 to 1700 MHz Tune Psat vs. Temperature [2] 22 20 18 Psat (dBm) 16 14 12 10 8 1.7 1.8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 +25 C +85 C - 40 C Output IP3 vs. Temperature [1] 36 34 32 IP3 (dBm) Output IP3 vs. Temperature [2] 36 34 32 +25 C +85 C - 40 C IP3 (dBm) 30 28 26 24 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) +25C +85C -40C 30 28 26 24 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd1 = Vdd2 (V) rbias min (ohms) max (ohms) r1 (ohms) 1k 3V 1K [3] open Circuit 1.5k 10k 120 5V 0 open Circuit 270 470 idd1 + idd2 (mA) 28 34 47 71 84 89 [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K ohm [3] with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. 7-9 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 Drain Bias Voltage (Vdd1, Vdd2) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 9.68 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +6V +10 dBm 150 °C 0.63 w 103.4 °C/w -65 to +150 °C -40 to +85 °C Vdd (Vdc) 2.7 3.0 3.3 4.5 5.0 5.5 idd (mA) 35 47 58 72 89 106 Note: Amplifier will operate over full voltage ranges shown above. eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC618lp3 HmC618lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] 618 XXXX 618 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10 Amplifiers - low Noise - smT Absolute Maximum Ratings Typical Supply Current vs. Vdd Rbias = 10 KOhm for 3V Rbias = 470 Ohm for 5V HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 pin Number function N/C Description No connection required. These pins may be connected to rf/DC ground without affecting performance. interface schematic Amplifiers - low Noise - smT 1, 3 - 5, 7, 9, 12, 14, 16 2 rfiN This pin is DC coupled and matched to 50 ohms. 6, 10 GND This pin and ground paddle must be connected to rC/DC ground. 8 res This pin is used to set the DC current of the amplifier by selection of the external bias resistor. see application circuit. 11 rfoUT This pin is matched to 50 ohms. 13, 15 Vdd2, Vdd1 power supply Voltage for the amplifier. external bypass capacitors of 1000 pf, and 0.47 µf are required. Application Circuit, 1700 to 2200 MHz Tune [1] Vdd = 5V, rbias = 470 ohm [2] Vdd = 3V, rbias = 10K 7 - 11 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Evaluation PCB, 1700 to 2200 MHz Tune 7 Amplifiers - low Noise - smT Evaluation PCB Ordering Information item evaluation pCB Content HmC618lp3e evaluation pCB part Number 117905-HmC618lp3e List of Materials for Evaluation PCB item J1, J2 J3 - J5 C2, C4 C3, C5 Description pCB mount smA rf Connector DC pin 1000 pf Capacitor, 0603 pkg.. 0.47 µf Capacitor, Tantalum 15 nH, inductor, 0603 pkg. 6.8 nH, inductor, 0603 pkg. 220 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0402 pkg. 470 ohm resistor, 0402 pkg. HmC618lp3(e) Amplifier 120586 evaluation pCB The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. l1 l3 C6 C1 r1 U1 pCB [2] [1] reference this number when ordering complete evaluation pCB F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 12 HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 Amplifiers - low Noise - smT 7 - 13 Application Circuit, 1200 to 1700 MHz Tune F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Evaluation PCB, 1200 to 1700 MHz Tune 7 Amplifiers - low Noise - smT Evaluation PCB Ordering Information item evaluation pCB Content HmC618lp3e evaluation pCB part Number eVAl01-HmC618lp3e List of Materials for Evaluation PCB item J1, J2 J3 - J5 C1 C2, C4 Description pCB mount smA rf Connector DC pin 10 nf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg.. 0.47 µf Capacitor, 0603 pkg. 100 pf Capacitor, 0402 pkg. 3 pf Capacitor, 0402 pkg. 27 nH, inductor, 0603 pkg. 5.6 nH, inductor, 0603 pkg. 18 nH, inductor, 0603 pkg. 470 ohm resistor, 0402 pkg. HmC618lp3(e) Amplifier 120586 evaluation pCB The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. C3, C5 C6 C7 l1 l2 l3 r1 U1 pCB [1] [1] Circuit Board material: rogers 4350. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 14