HMC619_09

HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Typical Applications The HMC619 is ideal for: • Telecom Infrastructure Features P1dB Output Power: +28 dBm Gain: 12 dB Output IP3: +37 dBm Supply Voltage: +12V @ 300 mA 50 Ohm Matched Input/Output Die Size: 3.38 x 2.05 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Microwave Radio & VSAT • Military & Space • Test Instrumentation • Fiber Optics Functional Diagram General Description The HMC619 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 10 GHz. The amplifier provides 12 dB of gain, +37 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 300 mA from a +12V supply. Gain flatness is excellent at ±0.4 dB from DC to 7 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 12V Typ.) 25.5 9.8 Min. Typ. DC - 3 12.8 ±0.3 0.014 12.5 21 28 28.5 42 4 300 25 9.0 Max. Min. Typ. 3-7 12 ±0.3 0.016 12.5 25 27.5 28 40 5 300 24 8.5 Max. Min. Typ. 7 - 10 11.5 ±0.4 0.023 13.5 17 26.5 27.5 37 7 300 Max. Units GHz dB dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2V to 0V to achieve Idd= 300 mA typical. 3 - 94 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 FREQUENCY (GHz) Gain vs. Temperature 18 16 14 GAIN (dB) S21 S11 S22 12 10 8 6 4 2 0 0 2 4 6 8 10 12 FREQUENCY (GHz) +25C +85C -55C 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 95 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 +25C +85C -55C -5 RETURN LOSS (dB) -10 -15 -20 -25 0 2 4 6 8 10 12 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 0 2 4 6 8 10 12 FREQUENCY (GHz) +25C +85C -55C Noise Figure vs. Temperature 15 +25C +85C -55C 12 NOISE FIGURE (dB) 9 6 3 0 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz P1dB vs. Temperature 32 30 Psat vs. Temperature 32 30 28 26 24 22 20 +25C +85C -55C P1dB (dBm) 26 24 22 20 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -55C LINEAR & POWER AMPLIFIERS - CHIP Psat (dBm) 3 28 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Output IP3 vs. Temperature 45 Output IP3 vs. Output Power @ 5 GHz 50 40 45 IP3 (dBm) 11.5V 12V 12.5V IP3 (dBm) 35 40 30 +25C +85C -55C 25 35 20 0 2 4 6 8 10 12 FREQUENCY (GHz) 30 0 3 6 9 12 15 18 21 24 27 OUTPUT POWER (dBm) Gain, Power & Output IP3 vs. Supply Voltage @ 5 GHz, Fixed Vgg Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 45 40 35 30 25 20 15 10 11.5 Gain P1dB Psat OIP3 12 Vdd (V) 12.5 3 - 96 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Power Compression @ 2 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 -10 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE Power Compression @ 5 GHz 32 28 24 20 16 Pout Gain PAE 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 97 12 8 4 0 -10 -5 0 5 10 15 20 -5 0 5 10 15 20 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 10 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 Power Dissipation 10 POWER DISSIPATION (W) 9 8 7 6 5 4 3 Max Pdis @ 85C 2 GHz 6 GHz Pout Gain PAE 0 -10 -5 0 5 10 15 20 -10 -5 0 5 10 15 20 INPUT POWER (dBm) INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN)(Vdd = +10 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 98 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +13 Vdc -2.5 to 0 Vdc +4V to +6V +27 dBm 150 °C 6.37 W 10.2 °C/W -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +11.5 +12.0 +12.5 Idd (mA) 299 300 301 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Outline Drawing 3 LINEAR & POWER AMPLIFIERS - CHIP Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 3 - 98 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Pad Descriptions Pad Number Function Description Interface Schematic 1 IN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 99 2 Vgg2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +5V should be applied to Vgg2. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 OUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. 6, 7 ACG3, ACG4 8 Vgg1 Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA 3 - 100 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 101 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com