HMC634LC4_09

HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Typical Applications Features Gain: 21 dB P1dB: +22 dBm Saturated Power: +23 dBm @ 17% PAE Single Supply Voltage: +5V @180 mA 50 Ohm Matched Input/Output 24 Lead 4x4mm SMT Package: 16mm2 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC634LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • LO Driver for Mixers • Military & Space Functional Diagram General Description The HMC634LC4 is a GaAs PHEMT MMIC Driver Amplifier in a leadless 4 x 4 mm ceramic surface mount package which operates between 5 and 20 GHz The amplifier provides up to 21 dB of gain, +29 dBm Output IP3, and +22 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC634LC4 is an ideal driver amplifier for microwave radio applications from 5 to 20 GHz, and may be biased at +5V, 130 mA to provide lower gain with optimized PAE. The amplifier’s I/Os are DC blocked and matched to 50 Ohms with no external matching required. Electrical Specifi cations, TA = +25° C, Vdd1-4= 5V, Idd= 180 mA [1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Idd = Idd1 + Idd2 + Idd3 + Idd4) [1] Adjust Vgg between -2 to 0V to achieve Idd= 180 mA Typical. 19 18 Min. Typ. 5 - 16 21 0.025 18 14 22 23 29 7.5 180 16 0.035 17 Max. Min. Typ. 16 - 20 20 0.020 14 13 20 20.5 28 7.5 180 0.030 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 9 - 162 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Broadband Gain & Return Loss 30 20 RESPONSE (dB) 10 0 -10 -20 -30 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) Gain vs. Temperature 30 25 20 GAIN (dB) 9 +25 C +85 C -40 C S11 S21 S22 15 10 5 0 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25 C -40 C +85 C -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) +25 C +85 C -40 C P1dB vs. Temperature 30 28 26 P1dB (dBm) 24 22 20 18 16 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25 C +85 C -40 C Psat vs. Temperature 30 28 26 Psat (dBm) 24 22 20 18 16 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25 C +85 C -40 C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 163 DRIVER & GAIN BLOCK AMPLIFIERS - SMT HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Power Compression @ 12.5 GHz Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 20 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -10 Pout (dBm) Gain (dB) PAE (%) 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 30 25 20 15 10 5 0 -10 Pout (dBm) Gain (dB) PAE (%) -8 -6 -4 -2 0 2 4 6 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 36 Noise Figure vs. Temperature 16 32 NOISE FIGURE (dB) 12 +25 C +85 C -40 C IP3 (dBm) 28 8 24 +25 C +85 C -40 C 4 20 16 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) 0 6 8 10 12 14 16 18 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 12.5 GHz 25 GAIN (dB), P1dB (dBm), Psat (dBm) Gain P1dB Psat Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 +25 C +85 C -40 C 24 23 22 21 -70 20 4.5 -80 4.7 4.9 Vdd (V) 5.1 5.3 5.5 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) 9 - 164 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Absolute Maximum Ratings 210 Gain, Power & Output IP3 vs. Gate Voltage @ 12.5 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 35 Idd Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) Gate Bias Voltage (Vgg) +5.5 Vdc -3 to 0 Vdc 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 165 30 180 RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 11.17 mW/°C above 85 °C) Thermal Resistance (channel to package bottom) Storage Temperature Idd (mA) +10 dBm 175 °C 1W 89.46 °C/W -65 to +150 °C -40 to +85 °C 25 150 20 Gain P1dB Psat IP3 120 15 -0.88 -0.84 -0.8 Vgg (V) -0.76 90 -0.72 Operating Temperature Typical Supply Current vs. Vdd Vdd (V) 4.5 5.0 5.5 Idd (mA) 177 180 183 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: Amplifi er will operate over full voltage ranges shown above Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number 1, 5 - 8, 10 - 14, 18, 21, 23 2, 4, 15, 17 Function N/C Description The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. Package Bottom must be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. Interface Schematic GND 3 RFIN 9 Vgg Gate control for amplifier, please follow “MMIC Amplifier Biasing Procedure” Application Note: See application circuit for required external components. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 24, 22, 20, 19 Vdd1, Vdd2, Vdd3, Vdd4 Power Supply Voltage for the amplifier. See application circuit for required external components. Application Circuit Component C1 - C5 C6 - C10 C11 - C15 Value 100 pF 1000 pF 2.2 μF 9 - 166 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 167 List of Materials for Evaluation PCB 115857 [1] Item J1 - J2 VD1 - VD4 C1 - C5 C6 - C10 C11 - C15 U1 PCB [2] Description 2.92 mm PC Mount K-Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor, Tantalum HMC634LC4 Driver Amplifier 115855 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com