HMC635

HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Applications Features Gain: 19.5 dB P1dB: +23 dBm Output IP3: +29 dBm Saturated Power: +24 dBm @ 15% PAE Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output Die Size: 1.95 x 0.84 x 0.10 mm 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP The HMC635 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • LO Driver for Mixers • Military & Space Functional Diagram General Description The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 24 19 16 Min. Typ. 18 - 36 19.5 0.045 15 13 23 24 29 8 280 21 14 0.060 16 Max. Min. [1] Typ. 36 - 40 19 0.045 9 12 19 20 27 7 280 0.050 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA [1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical. 2 - 58 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Gain vs. Temperature 32 28 24 GAIN (dB) 20 16 12 8 4 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) +25 C +85 C -55 C 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 - 59 S11 S21 S22 Input Return Loss vs. Temperature 0 -2 RETURN LOSS (dB) Output Return Loss vs. Temperature 0 +25 C +85 C -55 C -6 -8 -10 -12 -14 -16 -18 16 18 20 22 24 26 28 30 RETURN LOSS (dB) 38 40 42 -4 +25 C +85 C -55 C -5 -10 -15 -20 -25 32 34 36 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 26 25 24 23 P1dB (dBm) 22 21 20 19 18 17 16 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) +25 C +85 C -55 C Psat vs. Temperature 26 25 24 23 Psat (dBm) 22 21 20 19 18 17 16 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) +25 C +85 C -55 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Power Compression @ 30 GHz Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 40 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -15 Pout (dBm) Gain (dB) PAE (%) 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 30 25 20 15 10 5 0 -15 Pout (dBm) Gain (dB) PAE (%) -10 -5 0 5 10 -10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 40 36 32 IP3 (dBm) 28 24 20 16 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) +25 C +85 C -55 C Noise Figure vs. Temperature 15 12 NOISE FIGURE (dB) 9 6 +25 C +85 C -55 C 3 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 30 GHz 26 GAIN (dB), P1dB (dBm), Psat (dBm) Reverse Isolation vs. Temperature 0 -10 24 Gain P1dB Psat 22 ISOLATION (dB) -20 -30 -40 -50 +25 C +85 C -55 C 20 18 -60 16 4.5 -70 4.6 4.7 4.8 4.9 5 Vdd (V) 5.1 5.2 5.3 5.4 5.5 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) 2 - 60 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Supply Current vs. Vdd Vdd (V) 4.5 Idd (mA) 277 280 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) Gate Bias Voltage (Vgg1,Vgg2) RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 16.16 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +5.5 Vdc -3 to 0 Vdc 15 dBm 175 °C 1.45 W 61.87 °C/W -65 to +150 °C -55 to +85 °C 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 - 61 5.0 5.5 286 Note: Amplifi er will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Outline Drawing 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 2 - 62 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 - 63 2, 3, 4, 5 Vdd1, Vdd2, Vdd3, Vdd4 Power Supply Voltage for the amplifier. See assembly diagram for required external components. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. 7, 8 Vgg2, Vgg1 Gate control for amplifier, please follow “MMIC Amplifier Biasing Procedure” application note. See assembly diagram for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Assembly Diagram 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635 v00.1107 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 - 65 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible