HMC635LC4

HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Applications Features Gain: 18.5 dB [2] P1dB: +22 dBm [2] Output IP3: +27 dBm Saturated Power: +23.5 dBm @ 15% PAE [2] Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm2 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC635LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • LO Driver for Mixers • Military & Space Functional Diagram General Description The HMC635LC4 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 18.5 dB of gain, +27 dBm Output IP3, and +22 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635LC4 is capable of providing up to +23.5 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). Electrical Specifi cations TA = +25° C, Vdd= Vdd1, 2, 3, 4 = +5V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 280mA Parameter Frequency Range Gain [2] Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) [2] Output Third Order Intercept (IP3) Noise Figure [2] [2] [1] Max. Units GHz dB 0.06 dB/ °C dB dB dBm dBm dBm dB mA Min. Typ. 18 - 36 Max. Min. Typ. 36 - 40 15 18.5 0.045 13 10 0.06 15 17.5 0.045 7 7 19 22 23.5 16 21 21.5 22 27 7 280 21 26 7 280 Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4) [1] Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical. [2] Board loss subtracted out for gain, power and noise figure measurements. 9 - 172 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Broadband Gain & Return Loss [1] 25 Gain vs. Temperature [1] 25 9 +25C - 40C 15 RESPONSE (dB) S21 S11 S22 20 5 15 -5 10 -15 5 -25 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) 0 16 21 26 31 36 41 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C - 40C RETURN LOSS (dB) RETURN LOSS (dB) -5 +25C - 40C -5 -10 -10 -15 -15 -20 -20 16 21 26 31 36 41 FREQUENCY (GHz) -25 16 21 26 31 36 41 FREQUENCY (GHz) P1dB vs. Temperature [1] 26 Psat vs. Temperature [1] 26 24 P1dB (dBm) Psat (dBm) 24 22 22 20 +25C - 40C 20 +25C - 40C 18 18 16 16 21 26 31 36 41 FREQUENCY (GHz) 16 16 21 26 31 36 41 FREQUENCY (GHz) [1] Board loss subtracted out for gain, power and noise figure measurements. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 173 DRIVER & GAIN BLOCK AMPLIFIERS - SMT GAIN (dB) HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Power Compression @ 30 GHz [1] Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 40 GHz [1] 30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -15 Pout (dBm) Gain (dB) PAE (%) 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 30 25 20 15 10 5 0 -15 Pout (dBm) Gain (dB) PAE (%) -10 -5 0 5 10 -10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 40 36 32 IP3 (dBm) 28 24 20 16 16 21 26 31 36 41 FREQUENCY (GHz) +25 C -40 C Noise Figure vs. Temperature [1] 15 12 NOISE FIGURE (dB) +25 C -40 C 9 6 3 0 16 21 26 31 36 41 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 30 GHz [1] 26 GAIN (dB), P1dB (dBm), Psat (dBm) Reverse Isolation vs. Temperature 0 -10 24 ISOLATION (dB) -20 -30 -40 -50 18 -60 16 4.5 -70 4.7 4.9 Vdd (V) 5.1 5.3 5.5 16 21 26 31 36 41 FREQUENCY (GHz) +25C - 40C 22 Gain P1dB Psat 20 [1] Board loss subtracted out for gain, power and noise figure measurements. 9 - 174 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Supply Current vs. Vdd Vdd (V) 4.5 5.0 5.5 Idd (mA) 277 280 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, 2, 3, 4) Gate Bias Voltage (Vgg1,Vgg2) RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 70 °C) (derate 15.1 mW/°C above 70 °C) Thermal Resistance (channel to package base) Storage Temperature Operating Temperature +5.5V -3 to 0V 15 dBm 175 °C 1.575 W 66.4 °C/W -65 to +150 °C -55 to +70 °C 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 175 286 Note: Amplifi er will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number 1, 2, 4 - 8, 10, 12 - 15, 17 - 19, 24, Ground Paddle 3 16 Function GND Description These pins and package bottom must be connected to RF/DC ground This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic RFIN RFOUT 9, 11 Vgg1, Vgg2 Gate control for amplifier, please follow “MMIC Amplifier Biasing Procedure” application note. See assembly diagram for required external components. 20 - 23 Vdd4 - Vdd1 Power Supply Voltage for the amplifier. See assembly diagram for required external components. Application Circuit 9 - 176 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 177 List of Materials for Evaluation 122763 [1] Item J1 - J2 VD1 - VD4, VGG1, VGG2 C1 - C6 C7 - C12 C13 - C18 U1 PCB [2] Description 2.92 mm PC Mount K-Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum, Case A HMC635LC4 Driver Amplifier 122761 Evaluation PCB [3] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [3] Due to the very high frequency operation of this product a custom LC4 PCB footprint and solder stencil are required for this design. Performance shown in this data sheet was produced using this custom footprint. DO NOT USE Hittite’s standard LC4 footprint. Please contact Applications for details. The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com