HMC636ST89

HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Features low noise figure: 2.2 dB High p1dB output power: +22 dBm High output ip3: +40 dBm Gain: 13 dB 50 ohm i/o’s - no external matching industry standard soT89 package Typical Applications The HmC636sT89(e) is ideal for: • Cellular / PCS / 3G • WiMAX, WiBro, & Fixed Wireless • CATV & Cable Modem 9 Amplifiers - lineAr & power - smT • Microwave Radio Functional Diagram General Description The HmC636sT89(e) is a GaAs pHemT, High linearity, low noise, wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. packaged in an industry standard soT89, the amplifier can be used as either a cascadable 50 ohm gain stage, a pA pre-Driver, a low noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplifier compatible with virtually any pCB material or thickness. Electrical Specifications, Vs= 5.0 V, TA = +25° C parameter frequency range Gain Gain Variation over Temperature input return loss output return loss reverse isolation output power for 1 dB Compression (p1dB) output Third order intercept (ip3) noise figure supply Current (icq) 19 36 10 min Typ. 0.2 - 2.0 13 0.01 10 13 22 22 39 2.5 155 20 36 0.02 5 max min. Typ. 2.0 - 4.0 10 0.01 10 15 20 23 39 2 155 175 0.02 max. Units GHz dB dB/ °C dB dB dB dBm dBm dB mA note: Data taken with broadband bias tee on device output. 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Gain vs. Temperature 16 14 12 Broadband Gain & return Loss 20 15 10 RESPONSE (dB) S21 S11 S22 0 -5 -10 -15 -20 0 1 2 GAIN (dB) 5 10 8 6 4 2 0 +25C +85C -40C 9 3 4 3 4 5 6 0 1 2 FREQUENCY (GHz) FREQUENCY (GHz) input return Loss vs. Temperature 0 Output return Loss vs. Temperature 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -5 +25C +85C -40C -10 -15 +25C +85C -40C -15 -20 0 1 2 FREQUENCY (GHz) 3 4 -20 0 1 2 FREQUENCY (GHz) 3 4 reverse isolation vs. Temperature 0 REVERSE ISOLATION (dB) +25C +85C -40C noise Figure vs. Temperature 10 9 -5 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25C +85C -40C -10 -15 -20 -25 0 1 2 FREQUENCY (GHz) 3 4 0 0 1 2 FREQUENCY (GHz) 3 4 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz psat vs. Temperature 30 25 20 15 10 5 0 +25C +85C -40C p1dB vs. Temperature 30 25 20 15 10 5 P1dB (dBm) 9 Amplifiers - lineAr & power - smT +25C +85C -40C 0 0 1 2 FREQUENCY (GHz) 3 4 Psat (dBm) 0 1 2 FREQUENCY (GHz) 3 4 power Compression @ 850 MHz 28 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 4 0 -4 -8 -20 -16 -12 -8 -4 0 4 8 Pout Gain PAE power Compression @ 2200 MHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 -4 -8 -20 -16 -12 -8 -4 0 4 8 12 16 Pout Gain PAE 12 16 INPUT POWER (dBm) INPUT POWER (dBm) Output ip3 vs. input Tone power 45 Gain, power, Output ip3 & Supply Current vs. Supply Voltage @ 850 MHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 50 Is 160 140 120 100 Gain P1dB Psat OIP3 40 40 IP3 (dBm) 35 Is (mA) 30 80 60 40 20 30 0 dBm + 5 dBm +10 dBm 25 20 20 0 1 2 FREQUENCY (GHz) 3 4 10 4.5 4.75 5 Vs (Vdc) 5.25 0 5.5 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Absolute Maximum ratings Collector Bias Voltage (Vcc) rf input power (rfin)(Vcc = +5 Vdc) Channel Temperature Continuous pdiss (T = 85 °C) (derate 13.3 mw/°C above 85 °C) Thermal resistance (Channel to lead) storage Temperature operating Temperature esD sensitivity (HBm) +5.5 Volts +16 dBm 150 °C 0.86 w 75.6 °C/w -65 to +150 °C -40 to +85 °C eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions 9 Amplifiers - lineAr & power - smT 9-4 Class 1A Outline Drawing noTes: 1. pACKAGe BoDY mATeriAl: molDinG CompoUnD mp-180s or eQUiVAlenT. 2. leAD mATeriAl: Cu w/ Ag spoT plATinG. 3. leAD plATinG: 100% mATTe Tin. 4. Dimensions Are in inCHes [millimeTers] 5. Dimension Does noT inClUDe molDflAsH of 0.15mm per siDe. 6. Dimension Does noT inClUDe molDflAsH of 0.25mm per siDe. 7. All GroUnD leADs mUsT Be solDereD To pCB rf GroUnD. package information part number HmC636sT89 HmC636sT89e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] H636 XXXX H636 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz pin Descriptions pin number function Description interface schematic 1 rfin This pin is DC coupled. An off-chip DC blocking capacitor is required. 9 3 rfoUT rf output and DC BiAs for the amplifier. see Application Circuit for off-chip components. Amplifiers - lineAr & power - smT 2, 4 GnD These pins and package bottom must be connected to rf/DC ground. Application Circuit 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Evaluation pCB 9 Amplifiers - lineAr & power - smT 9-6 List of Materials for Evaluation pCB 119394 item J1 - J2 J3 - J4 C1 - C3 C4 C5 l1 U1 pCB [2] Description pCB mount smA Connector DC pin 100 pf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 2.2 µf Capacitor, Tantalum 47 nH inductor, 0603 pkg. HmC636sT89(e) 119392 evaluation pCB [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: fr4 The circuit board used in the final application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com