HMC641

HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Typical Applications The HMC641 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space Hybrids Features Broadband Performance: DC - 18 GHz High Isolation: 42 dB @ 12 GHz Low Insertion Loss: 2.1 dB @ 12 GHz Integrated 2:4 TTL Decoder Small Size: 1.92 x 1.60 x 0.10 mm 4 SWITCHES - CHIP • Test Instrumentation Functional Diagram General Description The HMC641 is a broadband non-reflective GaAs PHEMT SP4T switch chip. Covering DC to 18 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite’s SP4T switch product line. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines to two. The switch operates using a negative control voltage of 0/-5V, and requires a fixed Vss bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via one 3.0 x 0.5 mil gold ribbon of minimal length on each RF port. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, Vss= -5V, 50 Ohm System Parameter Insertion Loss Isolation (RFC to RF1 - RF4) Return Loss Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +14 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) “On State” “Off State” Frequency DC - 12 GHz DC - 18 GHz DC - 12 GHz DC - 18 GHz DC - 12 GHz DC - 18 GHz DC - 18 GHz 2.05- 18 GHz 0.05 - 18 GHz 39 37 12 11 12 21 37 Min. Typ. 1.8 2.8 42 40 15 14 15 24 40 14 95 Max. 2.1 3.1 Units dB dB dB dB dB dB dB dBm dBm ns ns DC - 18GHz 4 - 38 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Insertion Loss vs. Temperature 0 Isolation 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 RF1 RF2 RF3 RF4 INSERTION LOSS (dB) -1 -2 -3 +25 C +85 C - 55 C 4 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) -4 -5 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) Return Loss 0 RFC RF1,2,3,4 On RF1,2,3,4 Off 1 dB Input Compression Point 28 INPUT COMPRESSION POINT (dBm) -5 RETURN LOSS (dB) 26 -10 24 -15 22 -20 20 -25 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) 18 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Input Third Order Intercept Point @ +14 dBm Tone Power 50 45 40 IP3 (dBm) 35 30 25 20 15 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 39 SWITCHES - CHIP HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz IP3 vs. Input Tone Power @ 500 MHz 44 IP3 vs. Input Tone Power @ 12 GHz 44 42 42 IP3 (dBm) 4 SWITCHES - CHIP 38 IP3 (dBm) 0 2 4 6 8 10 12 14 40 40 38 36 36 34 POWER (dBm) 34 0 2 4 6 8 10 12 14 POWER (dBm) Absolute Maximum Ratings Bias Voltage Range (Vss) Control Voltage Range (A & B) Channel Temperature Thermal Resistance Channel to die bottom (Insertion Loss Path) Thermal Resistance Channel to die bottom (Terminated Path) Storage Temperature Operating Temperature Maximum Input Power -7 Vdc Vss -0.5V to +1 Vdc 150 °C 188 °C/W 222 °C/W -65 to +150 °C -55 to +85 °C +24 dBm Truth Table Control Input A High Low High Low B High High Low Low Signal Path State RFC to: RF1 RF2 RF3 RF4 Bias Voltage & Current Vss Range= -5.0 Vdc ±10% Vss (Vdc) -5 Iss (Typ) (mA) 3 Iss (Max) (mA) 6 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TTL/CMOS Control Voltages State Low High Bias Condition -3V to 0 Vdc @ 60 uA Typ. -5 to -4.2 Vdc @ 5 uA Typ. 4 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Outline Drawing 4 SWITCHES - CHIP Die Packaging Information [1] Standard WP-18 (Waffle Pack) Alternate [2] NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004”. 3. TYPICAL BOND PAD IS 0.004” SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 41 HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Pad Descriptions Pad Number Function RFC, RF1, RF2, RF3, RF4 Description These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic 1, 2, 3, 7, 8 4 SWITCHES - CHIP 4 CTLA See Truth Table and Control Voltage Table. 5 CTLB See Truth Table and Control Voltage Table. 6 Vss Supply Voltage -5.0 Vdc ± 10%. Die Bottom GND Die Bottom must be connected to RF/DC ground. TTL Interface Circuit Note: Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to Vss Pad of the RF Switch. 4 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC641 v01.0108 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz Assembly Diagram 4 SWITCHES - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 43