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HMC646LP2_09

HMC646LP2_09

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC646LP2_09 - GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC646LP2_09 数据手册
HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Typical Applications The HMC646LP2(E) is ideal for: • LNA Protection & T/R Switching • TD-SCDMA / 3G Infrastructure • Satellite Subscriber Terminals • Private Mobile Radio & Public Safety Handsets • Automotive Telematics Features High Input P0.1dB: +46 dBm Tx Low Insertion Loss: 0.4 dB High IIP3: +74 dBm Single Positive Control: 0/+3V to 0/+8V Failsafe operation; Tx ‘On’ when unpowered 2x2mm DFN SMT Package Functional Diagram General Description The HMC646LP2(E) is an SPDT switch in a leadless DFN surface mount plastic package for use in transmit / receive and LNA protection applications which require very low distortion and high power handling of up to 40 watts with less than 10% duty cycle. This robust switch can control signals from 100 - 2100 MHz* and is ideal for TD-SCDMA / 3G repeaters, PMR, automotive telematics, and satellite subscriber terminal applications. The design provides exceptional P0.1dB of +46 dBm and +74 dBm IIP3 on the Transmit (Tx) port. The failsafe topology provides a low loss path from Tx to RFC, when no DC power is available. 11 SWITCHES - SPDT - SMT Electrical Specifi cations, TA = +25°C, Vdd= 5V, Vctl = 0/+5 Vdc, 50 Ohm System* Parameter Frequency Range Insertion Loss Isolation Return Loss Input Power for 0.1 dB Compression Input Third Order Intercept (Two-tone input power = +17 dBm each tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, (50% CTL to 90% RF) tOFF (50% CTL to 10% RF) 100 320 320 100 320 320 100 320 320 ns ns ns Tx - RFC RFC - Rx Tx - RFC RFC - Rx Tx - RFC RFC - Rx Tx - RFC RFC - Rx Tx - RFC RFC - Rx 20 28 Min. Typ. 869 - 960 0.3 0.4 27 38 17 25 44 20 71 41 0.6 0.7 15 20 Max. Min. Typ. 1525 - 1661 0.6 0.8 22 30 27 20 46 20 74 42 0.9 1.1 12 25 Max. Min. Typ. 2010 - 2025 0.7 1.3 17 32 25 12 46 20 74 34 1.0 1.7 Max Units MHz dB dB dB dB dB dB dBm dBm dBm dBm * Specifi cations and data refl ect HMC646LP2(E) measured using the respective application circuits for each designated frequency band found herein 11 - 216 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Insertion Loss vs. Temperature, Tx with 915 MHz Tuning 0 Insertion Loss vs. Temperature, Rx with 915 MHz Tuning 0 -0.25 INSERTION LOSS (dB) -0.5 INSERTION LOSS (dB) -0.5 -0.75 -1 +25C +85C -40C -1 +25C +85C -40C -1.25 -1.5 -1.5 -1.75 -2 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 -2 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 Isolation with 915 MHz Tuning 0 RFC to Tx RFC to RX Return Loss with 915 MHz Tuning 0 Tx, Input Tx, Output Rx, Input Rx, Output 11 SWITCHES - SPDT - SMT 11 - 217 -10 ISOLATION (dB) -20 RETURN LOSS (dB) -10 -20 -30 -40 -30 -50 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 -40 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 Input IP3 vs. Voltage with 915 MHz Tuning 75 70 65 60 IP3 (dBm) 55 50 45 40 35 30 25 3 4 5 6 7 8 VOLTAGE (V) Tx Rx For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Insertion Loss vs. Temperature, Tx with 1600 MHz Tuning 0 Insertion Loss vs. Temperature, Rx with 1600 MHz Tuning 0 INSERTION LOSS (dB) -0.5 INSERTION LOSS (dB) -0.5 -1 -1 -1.5 +25C +85C -40C -1.5 +25C +85C -40C -2 1.5 1.55 1.6 FREQUENCY (GHz) 1.65 1.7 -2 1.5 1.55 1.6 FREQUENCY (GHz) 1.65 1.7 11 SWITCHES - SPDT - SMT Isolation with 1600 MHz Tuning 0 Return Loss with 1600 MHz Tuning 0 Tx, Input Tx, Output Rx, Input Rx, Output -10 ISOLATION (dB) -20 RETURN LOSS (dB) RFC to Tx RFC to RX -10 -20 -30 -40 -30 -50 1.5 1.55 1.6 FREQUENCY (GHz) 1.65 1.7 -40 1.5 1.55 1.6 FREQUENCY (GHz) 1.65 1.7 Input IP3 vs. Voltage with 1600 MHz Tuning 80 75 70 65 IP3 (dBm) 60 55 50 45 40 35 30 25 3 4 5 6 7 8 VOLTAGE (V) Tx Rx 11 - 218 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Insertion Loss vs. Temperature, Rx with 2015 MHz Tuning 0 Insertion Loss vs. Temperature, Tx with 2015 MHz Tuning 0 INSERTION LOSS (dB) -0.5 INSERTION LOSS (dB) -0.5 +25C +85C -40C -1 -1 -1.5 +25C +85C -40C -1.5 -2 1.95 2 2.05 2.1 -2 1.95 2 2.05 2.1 FREQUENCY (GHz) FREQUENCY (GHz) Isolation with 2015 MHz Tuning 0 Return Loss with 2015 MHz Tuning 0 -5 RETURN LOSS (dB) Tx, Input Tx, Output Rx, Input Rx, Output 11 SWITCHES - SPDT - SMT 11 - 219 -10 ISOLATION (dB) RFC to Tx RFC to RX -10 -15 -20 -25 -30 -20 -30 -40 1.95 2 2.05 2.1 -35 1.95 2 2.05 2.1 FREQUENCY (GHz) FREQUENCY (GHz) Input IP3 vs. Voltage with 2015 MHz Tuning 80 75 70 65 IP3 (dB) 60 55 50 45 40 35 30 25 3 4 5 6 7 8 VOLTAGE (V) Tx Rx For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Absolute Maximum Ratings Vdd = 5V Max. CW Input Power Max Channel Temp. Thermal Resistance Continuous Dissipated Power Supply Voltage (Vdd) Control Voltage Range (Vctl) Storage Temperature Operating Temperature Tx Port Rx Port Tx Port Rx Port Tx Port Rx Port +44.00 dBm +36.75 dBm 150 °C 14.75 °C/W 14.75 °C/W 4.4 W 4.4 W +10V Vdc -0.2 to Vdd + 1.0 Vdc -65 to +150 °C -40 to +85 °C Truth Table Control Input Vctl 0.0 0.0 Vdd Vdd 0.0 Vdd Vdd Signal Path State RFC To Tx ON OFF ON RFC to Rx OFF ON OFF Vdd = +3V to +8V Control Input Voltage Tolerances are ± 0.2 Vdc. DC blocking capacitors are required at ports RFC, Tx and Rx. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 SWITCHES - SPDT - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC646LP2 HMC646LP2E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 646 XXX 646 XXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 3-Digit lot number XXX 11 - 220 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Pin Descriptions Pin Number 1 Function Tx Description This pin is DC coupled and matched to 50 Ohms. Interface Schematic 2 N/C Not Connected 3 ACG External capacitor to ground is required. See application circuit herein. 4 Rx This pin is DC coupled and matched to 50 Ohms. 5 Vctl See truth table. 6 RFC This pin is DC coupled and matched to 50 Ohms. 11 SWITCHES - SPDT - SMT 11 - 221 GND Package bottom has exposed metal paddle that must be connected to PCB RF ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Application Circuit 11 SWITCHES - SPDT - SMT Components for Selected Frequencies Tuned Frequency Evaluation PCB Number C1, C3, C5 [1] C2 C4 C6 C7 L1 L2 R1 [1] DC blocking capacitors 915 MHz 118098 1000 pF 2.7 pF 1000 pF 1.8 pF 15 pF 15 nH 9 nH 10 k 1600 MHz 118099 330 pF 1.5 pF 100 pF 0.5 pF 4.7 pF 3.9 nH 4.3 nH 10 k 2015 MHz 118100 330 pF 1.1 pF 100 pF 0.5 pF 2.7 pF 1.8 nH 3.3 nH 10 k 11 - 222 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Evaluation PCB 11 SWITCHES - SPDT - SMT 11 - 223 List of Materials for Evaluation PCB [1] Item J1 - J3 J4 - J5 C1 - C7 [2] L1 - L2 [2] R1 U1 PCB [3] [2] Description PCB Mount SMA RF Connector 2mm DC Header Capacitor, 0402 Pkg. Inductor, 0402 Pkg. Resistor, 0402 Pkg. HMC646LP2(E) T/R Switch 110780 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table “Components for Selected Frequencies.” [2] Please refer to “Components for Selected Frequencies” table for values. [3] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC646LP2_09
物料型号: - HMC646LP2 - HMC646LP2E

器件简介: HMC646LP2(E)是一款GaAs MMIC 40W FAILSAFE SWITCH,工作频率范围为0.1 - 2.1 GHz。该开关适用于需要非常低的失真和高达40瓦功率处理的发射/接收和LNA保护应用。该开关设计提供出色的P0.1dB(+46 dBm)和高输入三阶截取点(IIP3)(+74 dBm)在发射(Tx)端口。Failsafe拓扑结构在无直流电源时提供从Tx到RFC的低损耗路径。

引脚分配: 1. Tx:发射端口,直流耦合,匹配到50欧姆。 2. N/C:未连接。 3. ACG:需要外部电容器接地,详见应用电路。 4. Rx:接收端口,直流耦合,匹配到50欧姆。 5. Vctl:控制输入,详见真值表。 6. RFC:射频公共端口,直流耦合,匹配到50欧姆。 7. GND:封装底部有暴露的金属垫片,必须连接到PCB射频地。

参数特性: - 频率范围:869-960 MHz、1525-1661 MHz、2010-2025 MHz。 - 插入损耗:Tx-RFC和RFC-Rx的插入损耗范围从0.3 dB到1.3 dB。 - 隔离度:Tx-RFC和RFC-Rx的隔离度范围从20 dB到38 dB。 - 回波损耗:Tx-RFC和RFC-Rx的回波损耗范围从17 dB到25 dB。 - 输入功率压缩点:Tx和RFC-Rx的输入功率压缩点为44 dBm至46 dBm。 - 三阶输入截取点:Tx和RFC-Rx的三阶输入截取点为71 dBm至74 dBm。

功能详解: HMC646LP2(E)是一个SPDT开关,用于TD-SCDMA/3G中继器、PMR、汽车远程信息处理和卫星用户终端等应用。该开关提供高输入P0.1dB和高IIP3,以及在无电源时的failsafe操作。

应用信息: - 高输入P0.1dB:+46 dBm Tx - 低插入损耗:0.4 dB - 高IIP3:+74 dBm - 单正控制:0/+3V至0/+8V - Failsafe操作:无电源时Tx为“开”

封装信息: - HMC646LP2:低应力注塑塑料封装,Sn/Pb焊料,MSL1等级,646 XXX标记。 - HMC646LP2E:符合RoHS的低应力注塑塑料封装,100%亚光Sn,MSL1等级,646 XXX标记。
HMC646LP2_09 价格&库存

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