HMC667LP2E

HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Features Low Noise Figure: 0.75 dB High Gain: 19 dB High Output IP3: +29.5 dBm Single Supply: +3V to +5V 6 Lead 2x2mm DFN Package: 4 mm2 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications The HMC667LP2(E) is ideal for: • WiMAX, WiBro & Fixed Wireless • SDARS & WLAN Receivers • Infrastructure & Repeaters • Access Points • Telematics & DMB Functional Diagram General Description The HMC667LP2(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for WiMAX, WLAN and fixed wireless receivers operating between 2300 and 2700 MHz. This self-biased LNA has been optimized to provide 0.75 dB noise figure, 19 dB gain and +29.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC667LP2(E) can also operate from a +3V supply for lower power applications. Electrical Specifi cations, TA = +25° C Vdd = +3 Vdc Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 9.5 14 Typ. 2300 - 2700 17.5 0.01 0.9 10 15 11.5 12.5 22 24 32 13.5 1.2 16 Max. Min. Typ. 2300 - 2700 19 0.01 0.75 12 14 16.5 17 29.5 59 75 1.1 Max. MHz dB dB/ °C dB dB dB dBm dBm dBm mA Vdd = +5 Vdc Units 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Broadband Gain & Return Loss 25 20 S21 Gain vs. Temperature 24 Vdd=5V 7 AMPLIFIERS - LOW NOISE - SMT 7-2 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 0.5 1 1.5 Vdd=5V Vdd=3V S22 S11 22 20 GAIN (dB) 18 16 Vdd=3V 14 12 +25C +85C -40C 2 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 5 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 Input Return Loss vs. Temperature [1] 0 Output Return Loss vs. Temperature [1] 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 +25C +85C -40C -5 +25C +85C -40C -10 -15 -15 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 Reverse Isolation vs. Temperature [1] -20 -25 ISOLATION (dB) -30 -35 -40 -45 -50 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 +25C +85C -40C P1dB vs. Temperature 20 Vdd=5V 18 16 P1dB (dBm) 14 Vdd=3V 12 10 8 6 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 +25C +85C -40C [1] Vdd = 5V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 AMPLIFIERS - LOW NOISE - SMT Noise Figure vs. Temperature [1] 1.6 1.4 NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 -40C Vdd=5V Vdd=3V +25C Psat vs. Temperature 20 Vdd=5V 18 +85C 16 Psat (dBm) 14 12 10 8 6 Vdd=3V +25C +85C -40C 0.2 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 Output IP3 vs. Temperature 36 34 32 30 IP3 (dBm) 28 26 Vdd=3V +25C +85C -40C Vdd=5V 24 22 20 18 16 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 Output IP3 and Idd vs. Supply Voltage @ 2300 MHz 36 34 32 30 IP3 (dB) 28 26 24 22 20 18 16 2.7 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 76 70 64 58 Output IP3 and Idd vs. Supply Voltage @ 2500 MHz 36 34 32 30 IP3 (dB) 28 26 24 22 20 18 16 2.7 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 Idd (mA) 76 70 64 58 52 Idd (mA) 46 40 34 28 22 16 5.5 52 46 40 34 28 22 16 5.5 [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Output Power, Gain & PAE @ 2300 MHz [1] 25 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 -5 -10 -25 Pout Gain PAE Output Power, Gain & PAE @ 2300 MHz [2] 25 20 15 10 5 0 -5 -10 -25 Pout Gain PAE 7 AMPLIFIERS - LOW NOISE - SMT NOISE FIGURE (dB) -20 -15 -10 INPUT POWER (dBm) -5 0 Pout (dBm), Gain (dB), PAE (%) -20 -15 -10 INPUT POWER (dBm) -5 0 Output Power, Gain & PAE @ 2500 MHz [1] 25 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 -5 -10 -25 Pout Gain PAE Output Power, Gain & PAE @ 2500 MHz [2] 25 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 -5 -10 -25 Pout Gain PAE -20 -15 -10 INPUT POWER (dBm) -5 0 -20 -15 -10 INPUT POWER (dBm) -5 0 P1dB, Gain, & Noise Figure vs. Supply Voltage @ 2300 MHz 24 22 Gain (dB) & P1dB (dBm) 20 18 16 14 12 10 8 2.7 P1dB Gain NF P1dB, Gain, & Noise Figure vs. Supply Voltage @ 2500 MHz 1.2 1.1 1 NOISE FIGURE (dB) 0.9 0.8 0.7 0.6 0.5 0.4 Gain (dB) & P1dB (dBm) 24 22 20 18 16 14 12 10 8 2.7 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 P1dB Gain NF 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 5.5 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 5.5 [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 AMPLIFIERS - LOW NOISE - SMT Gain & Return Loss w/ SDARS Tune [1] 25 20 15 Noise Figure vs. Vdd w/ SDARS Tune [2] 1.6 1.4 NOISE FIGURE (dB) RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 2.25 2.3 S11 S22 S21 1.2 1 0.8 0.6 0.4 0.2 2.25 Vdd=5V Vdd=3V 2.35 FREQUENCY (GHz) 2.4 2.45 2.3 2.35 FREQUENCY (GHz) 2.4 2.45 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 5.88 mW/°C above 85 °C) Thermal Resistance (Channel to Ground Paddle) Storage Temperature Operating Temperature +6 Vdc +10 dBm 150 °C 0.38 W 170 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] Vdd = 5V [2] Measurement reference plane shown on evaluation PCB drawing. 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Outline Drawing 7 AMPLIFIERS - LOW NOISE - SMT 7-6 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC667LP2 HMC667LP2E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 667 XXX 667 XXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 3-Digit lot number XXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number 1, 2, 5 Function GND Description These pins and package bottom must be connected to RF/DC ground. Interface Schematic 3 RFIN This pin is DC coupled See the application circuit for off-chip components 4 RFOUT This pin is AC coupled and matched to 50 Ohms. 6 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. Components for Selected Band Components Broadband SDARS C1 2.7 pF 2.2 pF L1 2.0 nH 4.3 nH Evaluation PCB Number 121891 122404 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Materials for Evaluation PCB [1] Item J1 - J2 J3 - J4 C1 C2 C3 C4 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 2.7 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0402 Pkg. 10 nF Capacitor, 0603 Pkg. 2.2 μF Capacitor, CASE-A Tantalum 2 nH Inductor, 0402 Pkg. HMC667LP2(E) Amplifier 117163 Evaluation PCB The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table “Components for Selected Band” on previous page [2] Circuit Board Material: Rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8