HMC669LP3E

HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Features Noise figure: 1.4 dB output ip3: +29 dBm Gain: 17 dB failsafe operation: Bypass is enabled when lNA is unpowered single supply: +3V or +5V 16 lead 3x3mm QfN package: 9 mm 2 7 Amplifiers - low Noise - smT Typical Applications The HmC669lp3(e) is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • Tower mounted Amplifiers • Test & measurement equipment Functional Diagram General Description The HmC669lp3(e) is a versatile, high dynamic range GaAs mmiC low Noise Amplifier that integrates a low loss lNA bypass mode on the iC. The amplifier is ideal for receivers and lNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm ip3 from a single supply of +5V @ 86mA. input and output return losses are excellent and no external matching components are required. A single control line is used to switch between lNA mode and a low loss bypass mode. failsafe topology also enables the lNA bidirectional bypass path when no DC power is available. Electrical Specifications, TA = +25° C, Rbias = 15 Ohm lNA mode parameter min. frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss reverse isolation power for 1dB Compression (p1dB)[1] Third order intercept (ip3)[2] supply Current (idd) switching speed lNA mode to Bypass mode Bypass mode to lNA mode 80 100 100 ns ns 12 Vdd = +3V Typ. 1.7 - 2.2 15 0.015 1.4 10 13 28 11.5 25 49 59 1.65 14 max. min. Vdd = +5V Typ. 1.7 - 2.2 17 0.014 1.4 11 13 30 12 29 86 105 1.65 12 12 21 25 0.04 12 12 24 25 -3 max. Bypass mode min. Typ. 1.7 - 2.2 -2.1 0.0008 -3 max. failsafe mode min. Typ. 1.7 - 2.2 -2.1 0.0008 max. GHz dB dB / °C dB dB dB dB dBm dBm mA Units [1] p1dB for lNA mode is referenced to rfoUT while p1dB for Bypass and failsafe modes are referenced to rfiN. [2] ip3 for lNA mode is referenced to rfoUT while ip3 for Bypass and failsafe modes are referenced to rfiN. 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz LNA - Gain vs. Temperature [1] 22 20 18 LNA - Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 0 -5 -10 -15 -20 -25 -30 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 3 S11 S21 7 Amplifiers - low Noise - smT 7-2 S22 GAIN (dB) 5 Vdd=5V Vdd=3V 16 14 12 10 1.6 +25C +85C -40C 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 LNA - Gain vs. Temperature [2] 22 20 18 GAIN (dB) 16 14 12 10 1.6 +25C +85C -40C LNA - Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) Input Return Loss -10 -15 -20 -25 -30 1.6 Output Return Loss +25C +85C -40C 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 LNA - Noise Figure vs. Temperature [3] 2 +85C LNA - Output IP3 vs. Temperature, Output Power @ 0 dBm 34 Vdd=5V 1.8 NOISE FIGURE (dB) 1.6 +25C 30 1.2 1 0.8 0.6 0.4 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -40C Vdd=5V Vdd=3V IP3 (dBm) 1.4 26 22 Vdd=3V +25C +85C -40C 18 14 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [1] Vdd = 5V [2] Vdd = 3V [3] measurement reference plane shown on evaluation pCB drawing. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz LNA - Output P1dB vs. Temperature [2] 16 14 12 P1dB (dBm) 10 8 6 +25C +85C -40C 7 Amplifiers - low Noise - smT LNA - Output P1dB vs. Temperature [1] 20 18 16 P1dB (dBm) 14 12 10 8 6 4 2 1.6 1.7 1.8 +25C +85C -40C 4 2 1.6 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 LNA - Gain, P1dB, Output IP3 vs. Current [1] @ 1900 MHz 18 45 LNA - Gain, P1dB, Output IP3 vs. Current [2] @ 1900 MHz 18 Gain 42 GAIN (dB) , P1dB (dBm) Gain 14 P1dB 37 IP3 (dBm) GAIN (dB) , P1dB (dBm) 16 41 16 38 14 P1dB IP3 10 34 IP3 (dBm) 12 33 12 30 10 IP3 8 70 75 80 Idd (mA) 85 90 95 29 26 25 8 40 45 Idd (mA) 50 55 22 LNA - Reverse Isolation vs. Temperature [1] -10 -15 ISOLATION (dB) -20 -25 -30 -35 -40 1.6 +25C +85C -40C LNA - Output P1dB, Gain & Noise Figure [3] vs. Vdd @ 1900 MHz 20 18 GAIN (dB) & P1dB (dBm) 16 14 12 10 8 3 3.5 4 Voltage Supply (V) 4.5 5 P1dB Gain 2 1.8 NOISE FIGURE (dB) 1.6 1.4 1.2 1 0.8 NF 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [1] Vdd = 5V [2] Vdd = 3V [3] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Bypass Mode Input IP3 vs. Output Power @ 1900 MHz 40 +25C +85C -40C Bypass Mode Broadband Gain & Return Loss 0 -2 -4 RESPONSE (dB) S21 S11 S22 7 Amplifiers - low Noise - smT 7-4 35 -8 -10 -12 -14 -16 0.8 1 1.2 1.4 IP3 (dBm) -6 30 25 20 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 3 15 -10 -5 0 5 Pout (dBm) 10 15 Bypass Mode - Input IP3 vs. Temperature, Output Power @ 5 dBm 32 +25C +85C -40C Bypass Mode Insertion Loss vs. Temperature 0 +25C +85C -40C 28 IP3 (dBm) -1 24 GAIN (dB) -2 -3 20 -4 16 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -5 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Bypass Mode Input Return Loss vs. Temperature 0 Bypass Mode Output Return Loss vs. Temperature 0 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) -5 +25C +85C -40C -5 -10 -10 -15 -15 -20 -20 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Failsafe Mode Input IP3 vs. Output Power @ 1900 MHz 40 +25C +85C -40C 7 Amplifiers - low Noise - smT Failsafe Mode Broadband Gain & Return Loss 0 -2 -4 RESPONSE (dB) S21 S11 S22 35 -8 -10 -12 -14 -16 0.8 IP3 (dBm) -6 30 25 20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 3 15 -10 -5 0 5 Pout (dBm) 10 15 Failsafe Mode - Input IP3 vs. Temperature, Output Power @ 5 dBm 32 +25C +85C -40C Failsafe Mode Insertion Loss vs. Temperature 0 +25C +85C -40C 28 IP3 (dBm) -1 24 GAIN (dB) -2 -3 20 -4 16 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -5 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Failsafe Mode Input Return Loss vs. Temperature 0 Failsafe Mode Output Return Loss vs. Temperature 0 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) -5 +25C +85C -40C -5 -10 -10 -15 -15 -20 -20 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Typical Supply Current vs. Vdd rbias Ω 0 15 47 180 [1] Absolute Maximum Ratings Drain Bias Voltage (Vdd) Control Voltage (Vctl) rf input power (rfiN) lNA mode Bypass / fail safe mode +6 Vdc +6 Vdc +5 dBm +20 dBm 150 °C 0.70 w 93.33 °C/w -65 to +150° C -40 to +85° C Class 1A 7 95 86 73 50 Vdd= 3V 55 49 41 28 Vdd= 5V Channel Temperature Continuous pdiss (T = 85 °C) (derate 10.71 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature esD sensitivity (HBm) [1] recommended maximum rbias Truth Table lNA mode Bypass mode failsafe mode Vctl = Vdd = 3 to 5V Vctl= 0V, Vdd = 3 to 5V Vctl = Vdd = N/C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 Amplifiers - low Noise - smT idd (mA) HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz 7 Amplifiers - low Noise - smT Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC669lp3 HmC669lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] 669 XXXX 669 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Pin Descriptions pin Number 1, 2, 5, 8, 11, 12, 13, 15 function N/C Description These pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/DC ground externally. interface schematic 7 Amplifiers - low Noise - smT 7-8 3 rfiN This pin is DC coupled. off-chip DC blocking capacitor required. 4, 9 GND These pins and the exposed ground paddle must be connected to rf/DC ground. AC Ground. Attach bypass capacitor per application circuit. 6 ACG 7 res external resistor pin for current control. see table for external resistor value vs. bias current data. 10 rfoUT This pin is matched to 50 ohms 14 Vdd power supply voltage pin. external bypass capacitors required. 16 Vctl Control voltage pin for lNA / Bypass modes. setting voltage equal to VDD enables lNA mode. external Bypass capacitor required. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz 7 Amplifiers - low Noise - smT 7-9 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 121923 [1] item J1 - J2 J3 - J4 C1 C2 C3 C4 C5 r1 r2 U1 pCB [2] Description pCB mount smA Connector DC pin 82 pf Capacitor, 0402 pkg. 8200 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0603 pkg. 1 µf Capacitor, 0603 pkg. 100 pf Capacitor, 0603 pkg. 15 ohm resistor, 0402 pkg. 0 ohm resistor, 0402 pkg. HmC669lp3(e) Amplifier 118911 evaluation Board The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10