HMC716LP3E

HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Features Noise figure: 1 dB Gain: 18 dB output ip3: +33 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3mm QfN package: 9 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC716lp3(e) is ideal for: • fixed wireless and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radio • Access points Functional Diagram General Description The HmC716lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for fixed wireless and lTe/wimAX/4G basestation front-end receivers operating between 3.1 and 3.9 GHz. The amplifier has been optimized to provide 1 dB noise figure, 18 dB gain and +33 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC716lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. Electrical Specifications parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss TA = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [1] Vdd = +3V min. Typ. 3.1 - 3.9 13 17 0.01 1 25 13 12 15 16.5 26 41 55 16 1.3 15.5 max. min. Vdd = +5V Typ. 3.1 - 3.9 18 0.01 1 30 16 19 20.5 33 65 90 1.3 max. Units mHz dB dB/ °C dB dB dB dBm dBm dBm mA output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) [1] rbias resistor sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Gain vs. Temperature [1] 26 24 22 GAIN (dB) Broadband Gain & Return Loss [1] [2] 30 20 RESPONSE (dB) 10 0 -10 -20 -30 -40 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 5V 3V S11 S22 S21 7 +25C +85C -40C 20 18 16 14 12 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 Gain vs. Temperature [2] 26 24 22 GAIN (dB) 20 18 16 14 12 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 +25C +85C -40C Input Return Loss vs. Temperature [1] 0 RETURN LOSS (dB) -10 +25C +85C -40C -20 -30 -40 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 Output Return Loss vs. Temperature [1] 0 +25C +85C -40C Reverse Isolation vs. Temperature [1] -15 -20 ISOLATION (dB) -25 -30 -35 -40 -45 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 [1] Vdd = 5V, rbias = 820 Ω [2] Vdd = 3V, rbias = 47k Ω F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 Amplifiers - low Noise - smT HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz P1dB vs. Temperature [1] [2] 24 Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] [2] [4] 1.8 1.5 NOISE FIGURE (dB) 1.2 0.9 0.6 -40C +25C +85C 21 P1dB (dBm) 18 Vdd=3V 15 0.3 0 3 3.2 Vdd=5V Vdd=3V 12 +25C +85C -40C 9 3.4 3.6 FREQUENCY (GHz) 3.8 4 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) Psat vs. Temperature [1] [2] 24 Vdd=5V Output IP3 vs. Temperature [1] [2] 45 41 37 IP3 (dBm) +25C +85C -40C 21 Psat (dBm) Vdd=5V 18 33 29 15 Vdd=3V +25C +85C -40C 12 25 Vdd=3V 9 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 21 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 Output IP3 and Supply Current vs. Supply Voltage @ 3300 MHz [3] 36 34 32 IP3 (dBm) 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) Idd IP3 Output IP3 and Supply Current vs. Supply Voltage @ 3800 MHz [3] 95 80 65 IP3 (dBm) Idd (mA) 50 35 20 5 5.5 36 34 32 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) Idd IP3 95 80 65 Idd (mA) 50 35 20 5 5.5 [1] Vdd = 5V, rbias = 820 Ω [2] Vdd = 3V, rbias = 47kΩ [3] rbias = 820 Ω for Vdd = 5V, rbias = 47k Ω for Vdd = 3V [4] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Power Compression @ 3300 MHz [2] 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -5 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 Pout Gain PAE Power Compression @ 3300 MHz [1] 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -5 -20 -15 -10 -5 INPUT POWER (dBm) 0 5 Pout Gain PAE 7 Amplifiers - low Noise - smT 1.4 1.3 NOISE FIGURE (dB) 1.2 1.1 1 0.9 0.8 0 2 Power Compression @ 3300 MHz [1] 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -5 -10 -20 -16 -12 -8 -4 0 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 3800 MHz [2] 32 Pout (dBm), GAIN (dB), PAE (%) 26 20 14 8 2 -4 -10 -20 Pout Gain PAE 4 8 -15 -10 -5 INPUT POWER (dBm) 0 5 Gain, Power & Noise Figure vs. Supply Voltage @ 3300 MHz [3] 24 22 GAIN (dB) & P1dB (dBm) 20 18 16 14 12 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) NF P1dB Gain Gain, Power & Noise Figure vs. Supply Voltage @ 3800 MHz [3] 1.4 1.3 1.2 1.1 1 0.9 0.8 5.5 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 23 21 19 17 15 13 11 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) NF P1dB Gain 5.5 [1] Vdd = 5V, rbias = 820 Ω [2] Vdd = 3V, rbias = 47k Ω [3] rbias = 820 Ω for Vdd = 5V, rbias = 47k for Vdd 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Gain, Noise Figure & Rbias @ 3300 MHz 22 20 Vdd=3V Vdd=5V 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 3300 MHz 40 1.3 1.25 NOISE FIGURE (dB) 1.2 1.15 1.1 1.05 1 1000 Rbias (Ohms) 10000 100000 36 Vdd=3V Vdd=5V IP3 (dBm) GAIN (dB) 1000 10000 Rbias (Ohms) 100000 32 18 16 14 28 24 12 10 100 20 100 Output IP3 vs. Rbias @ 3800 MHz 40 Gain, Noise Figure & Rbias @ 3800 MHz 20 1.25 Vdd=3V Vdd=5V 36 Vdd=3V Vdd=5V 18 16 GAIN (dB) 14 12 1.2 NOISE FIGURE (dB) 1.15 1.1 1.05 1 0.95 IP3 (dBm) 32 28 24 10 8 100 1000 Rbias (Ohms) 10000 20 100 1000 10000 Rbias (Ohms) 100000 100000 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Absolute Bias Resistor Range & Recommended Bias Resistor Values Vdd (V) rbias (Ω) min max recommended 2.2k 3V 2k [1] open Circuit 5.6k 47k 270 5V 0 open Circuit 820 2.2k idd (mA) 20 30 41 48 65 81 7 Amplifiers - low Noise - smT 7-6 [1] with Vdd= 3V and rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 11.1 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature esD sensitivity (HBm) +5.5V +10 dBm 150 °C 0.72 w 90 °C/w -65 to +150 °C -40 to +85 °C Class 1A eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Typical Supply Current vs. Supply Voltage Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 idd (mA) 31 41 51 51 65 80 (Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V) Note: Amplifier will operate over full voltage ranges shown above. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz 7 Amplifiers - low Noise - smT Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC716lp3 HmC716lp3e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] 716 XXXX 716 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Pin Descriptions pin Number 1, 3 - 7, 9, 10, 12 - 14, 16 function N/C Description The pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/DC ground externally. interface schematic 7 Amplifiers - low Noise - smT 7-8 2 rfiN This pin is DC coupled. An off chip DC blocking capacitor is required. 11 rfoUT This pin is AC coupled and matched to 50 ohms. 8 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply voltage. Bypass capacitors are required. see application circuit. GND Ground paddle must be connected to rf/DC ground. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz 7 Amplifiers - low Noise - smT 7-9 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC716LP3 / 716LP3E v02.1009 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 122540 item J1, J2 J3, J4 C1 C2 C3 C4 r1 r2 U1 pCB [2] Description pCB mount smA Connector DC pin 10 nf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 0.47 µf Capacitor, 0603 pkg. 100 pf Capacitor, 0402 pkg. 820Ω resistor, 0402 pkg. 0 ohm resistor, 0402 pkg. HmC716lp3(e) Amplifier 122490 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10