HMC740ST89E

HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Typical Applications Features P1dB Output Power: +18 dBm Gain: 15 dB Output IP3: +40 dBm Cascadable 50 Ohm I/Os Single Supply: +5V Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC740ST89E is ideal for: • Cellular/3G & WiMAX/4G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment • IF & RF Applications Functional Diagram General Description The HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18 dBm output power. The HMC740ST89E offers 15 dB of gain with a +40 dBm output IP3 at 100 MHz, and can operate directly from a +5V supply. The HMC740ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. Electrical Specifi cations, Vcc = 5V, TA = +25° C Parameter Frequency Range Gain Gain Flatness Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) 15.5 12 Min. Typ. 0.05 - 1 15 ±0.1 0.003 18 18 20 18 38 3.5 88 14.5 0.006 11 Max. Min. Typ. 0.05 - 3 15 ±0.7 0.003 15 18 21 17 32 3.5 88 0.006 Max. Units GHz dB dB dB/ °C dB dB dB dBm dBm dB mA 9 - 174 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz IF Band Performance Gain & Return Loss 20 15 10 15 RESPONSE (dB) 0 -5 -10 -15 5 -20 -25 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 GAIN (dB) S21 S11 S22 Gain vs. Temperature 20 9 +25C +85C -40C 10 Noise Figure vs. Temperature 8 7 NOISE FIGURE (dB) 6 5 4 3 2 +25C +85C -40C Output IP3 vs. Temperature 45 40 35 +25C +85C -40C 30 25 1 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Output IP3 vs. Vcc 45 Output IP3 vs. Output Power 50 45 40 40 35 IP3 (dBm) IP3 (dBm) 35 30 25 20 15 100MHz 400MHz 1GHz 30 4.5V 5.0V 5.5V 25 10 5 0 0.8 1 -5 0 5 Pout (dBm) 10 15 20 0 0.2 0.4 0.6 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 175 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 5 IP3 (dBm) HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Broadband Performance 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Gain & Return Loss 20 15 10 Gain vs. Temperature 20 15 RESPONSE (dB) 5 0 -5 -10 -15 5 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 GAIN (dB) S21 S11 S22 10 +25C +85C -40C Gain vs. Vcc 20 Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25C +85C -40C 15 GAIN (dB) -10 -15 -20 -25 10 4.5V 5.0V 5.5V 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 +25C +85C -40C Input Return Loss vs. Vcc 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4.5V 5.0V 5.5V 9 - 176 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Output Return Loss vs. Vcc 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4.5V 5.0V 5.5V Noise Figure vs. Temperature 8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) +25C +85C -40C 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 177 Noise Figure vs. Vcc 8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 4.5V 5.0V 5.5V Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 +25C +85C -40C Reverse Isolation vs. Vcc 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4.5V 5.0V 5.5V Output IP3 vs. Temperature 50 40 IP3 (dBm) 30 +25C +85C -40C 20 10 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Output IP3 vs. Vcc 50 Current vs. Temperature 140 +25C +85C -40C 40 CURRENT (mA) 2.5 3 120 IP3 (dBm) 30 4.5V 5.0V 5.5V 100 20 80 10 60 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 40 4.5 4.75 5 VOLTAGE (V) 5.25 5.5 P1dB vs. Temperature 20 Psat vs. Temperature 20 15 P1dB (dBm) Psat (dBm) 15 10 +25C +85C -40C 10 +25C +85C -40C 5 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Power Compression @ 500 MHz 20 Pout (dBm), GAIN (dB), PAE (%) 15 10 5 0 -5 -10 -20 Pout Gain PAE Power Compression @ 2 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 15 10 5 0 -5 -10 -20 Pout Gain PAE -17 -14 -11 -8 -5 -2 INPUT POWER (dBm) 1 4 7 -16 -12 -8 -4 0 INPUT POWER (dBm) 4 8 9 - 178 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 7.14 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HMB) +5.5 Vdc +10 dBm 150 °C 0.46 W 140 °C/W -65 to +150 °C -40 to +85 °C Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 179 Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC740ST89E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H740 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number Function Description Interface Schematic 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit 9 - 180 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 181 List of Materials for Evaluation PCB 124390 [1] Item J1, J2 J3, J4 C1, C2 C3 C4 C5 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 470 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 μF Capacitor Tantalum 820 nH Inductor, 0603 Pkg. HMC740ST89E 119392 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com