HMC751LC4_10

HMC751LC4_10

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC751LC4_10 - SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC751LC4_10 数据手册
HMC751LC4 v00.0409 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz Features Noise figure: 2.2 dB Gain: 25 dB oip3: +25 dBm single supply: +4V @ 73 mA 50 ohm matched input/output roHs Compliant 4 x 4 mm package 7 Amplifiers - low Noise - smT Typical Applications The HmC751lC4 is ideal for: • point-to-point radios • point-to-multi-point radios & VsAT • Test equipment and sensors • military Functional Diagram General Description The HmC751lC4 is a high dynamic range GaAs pHemT mmiC low Noise Amplifier (lNA) housed in a leadless “pb free” roHs compliant smT package. The HmC751lC4 provides 25 dB of small signal gain, 2.2 dB of noise figure and output ip3 of +25 dBm. The p1dB output power of +13 dBm also enables the lNA to function as a lo driver for balanced, i/Q or image reject mixers. The HmC751lC4 allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +4V parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd)(Vdd = +4V) 50 22 min. Typ. 17 - 20 24 0.025 2.2 17 16 13 15 25 73 90 50 2.8 23 max. min. Typ. 20 - 27 25 0.028 2.0 15 15 13 15 25 73 90 2.6 max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC751LC4 v00.0409 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz Gain vs. Supply Voltage 30 28 26 GAIN (dB) 24 22 20 18 16 14 4.5 V 4.0 V 3.5 V Gain vs. Temperature 30 28 26 GAIN (dB) 24 22 20 18 16 14 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C - 40 C 7 Amplifiers - low Noise - smT 7-2 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C - 40 C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C - 40 C Noise Figure vs. Temperature 10 Output IP3 vs. Temperature 30 28 8 NOISE FIGURE (dB) +25 C +85 C -40 C 26 IP3 (dBm) 24 22 20 18 16 +25 C +85 C - 40 C 6 4 2 0 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) 14 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC751LC4 v00.0409 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz P1dB vs. Supply Voltage 18 16 14 GAIN (dB) 12 10 8 6 4 3.5 V 4.0 V 4.5 V 7 Amplifiers - low Noise - smT P1dB vs. Temperature 18 16 14 P1dB (dBm) 12 10 8 6 4 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C - 40 C 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) Psat vs. Temperature 18 16 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 +25 C +85 C - 40 C 14 Psat (dBm) 12 10 8 6 4 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C - 40 C 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) Power Compression @ 21 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -25 Pout Gain PAE -20 -15 INPUT POWER (dBm) -10 -5 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC751LC4 v00.0409 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +3.5 +4.0 +4.5 idd (mA) 69 73 77 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) rf input power (rfiN)(Vdd = +4 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 11.2 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature +5.5 Vdc -5 dBm 175 °C 1w 89 °C/w -65 to +150 °C -40 to +85 °C 7 Amplifiers - low Noise - smT 7-4 Note: Amplifier will operate over full voltage range shown above. eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing NoTes: 1. pACKAGe BoDY mATeriAl: AlUmiNA 2. leAD AND GroUND pADDle plATiNG: 30-80 miCroiNCHes GolD oVer 50 miCroiNCHes miNimUm NiCKel 3. DimeNsioNs Are iN iNCHes [millimeTers] 4. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm DATUm 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC751LC4 v00.0409 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz 7 Amplifiers - low Noise - smT Pin Descriptions pin Number 1, 3, 5 - 7, 12 - 14, 16, 18, 19, 24 2, 8 - 11, 17, 23 4 15 function GND Description These pins and package bottom must be connected to rf/DC ground. This pin may be connected to rf/DC ground. performance will not be affected. This pin is AC coupled and matched to 50 ohms. This pin is AC coupled and matched to 50 ohms. power supply Voltage for the amplifier. external bypass capacitors of 100 pf, 1,000 pf and 2.2 µf are required. interface schematic N/C rfiN rfoUT 22, 21, 20 Vdd1, 2, 3 Application Circuit Component C1, C2, C3 C4, C5, C6 C7, C8, C9 Value 100 pf 1,000 pf 2.2 µf 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC751LC4 v00.0409 SMT pHEMT LOW NOISE AMPLIFIER, 17 - 27 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 123815 [1] item J1 - J2 J3 - J6 C1 - C3 C4 - C6 C7 - C9 U1 pCB [2] Description pCB mount K Connector DC pin 100 pf Capacitor, 0402 pkg. 1,000 pf Capacitor, 0603 pkg. 2.2 µf Capacitor, Tantalum HmC751lC4 Amplifier 123813 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6
HMC751LC4_10 价格&库存

很抱歉,暂时无法提供与“HMC751LC4_10”相匹配的价格&库存,您可以联系我们找货

免费人工找货