HMC753LP4E

HMC753LP4E v01.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Features Noise Figure: 1.5 dB @ 4 GHz Gain: 17 dB P1dB Output Power: +18 dBm Supply Voltage: +5V @ 55 mA Output IP3: +30 dBm 50 Ohm matched Input/Output 24 Lead Plastic 4x4mm SMT Package: 16mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications This HMC753LP4E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Functional Diagram General Description The HMC753LP4E is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm plastic surface mount package. The amplifier operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5V supply. The P1dB output power of up to +18 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC753LP4E also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios or VSAT applications. This versatile LNA is also available in die form as the HMC-ALH444. Electrical Specifi cations, TA = +25° C, Vdd= +5V, Idd = 55 mA[2] Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = 5V, set Vgg2 = 1.5V, Vgg1 = -0.8V Typ.) 14 Min. Typ. 1-6 16.5 0.004 1.5 11 18 18 20 30 55 2 10 Max. Min. Typ. 6 - 11 14 0.008 2 8 12 15 17 28 55 2.7 Max. Units GHz dB dB / °C dB dB dB dBm dBm dBm mA 8 - 366 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC753LP4E v01.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Broadband Gain & Return Loss [1] 25 Gain vs. Temperature [1] 18 8 LOW NOISE AMPLIFIERS - SMT 8 - 367 15 16 RESPONSE (dB) 5 GAIN (dB) S11 S22 S21 14 -5 +25C +85C -40C 12 -15 -25 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 10 1 3 5 7 9 11 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 9 11 -5 -10 +25C +85C -40C -10 -15 -15 -20 -20 -25 1 3 5 7 FREQUENCY (GHz) -25 1 3 5 7 9 11 FREQUENCY (GHz) Noise Figure vs. Temperature [1] 10 +25C +85C -40C Output IP3 vs. Temperature 35 30 25 8 NOISE FIGURE (dB) 6 IP3 (dBm) 20 15 +25C +85C -40C 4 2 10 5 1 3 5 7 9 11 1 3 5 7 9 11 FREQUENCY (GHz) FREQUENCY (GHz) 0 [1] Board loss subtracted out for gain, power and noise figure measurement F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC753LP4E v01.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz 8 LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature [1] 25 Psat vs. Temperature [1] 24 20 P1dB (dBm) Psat (dBm) 20 15 +25C +85C -40C 16 +25C +85C -40C 10 12 5 8 0 1 3 5 7 9 11 FREQUENCY (GHz) 4 1 3 5 7 9 11 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 1 3 5 7 9 11 FREQUENCY (GHz) +25C +85C -40C Power Compression @ 21 GHz [1] 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -20 Pout Gain PAE -15 -10 -5 0 5 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 21 GHz [1] 22 20 GAIN (dB), P1dB (dBm) 18 16 14 12 10 8 4.5 5 Vdd (V) 7 6 5 4 3 2 1 0 5.5 NOISE FIGURE (dB) [1] Board loss subtracted out for gain, power and noise figure measurement 8 - 368 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC753LP4E v01.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Absolute Maximum Ratings Drain Bias Voltage RF Input Power Gate Bias Voltage, Vgg1 Gate Bias Voltage, Vgg2 Channel Temperature Continuous Pdiss (T = 85 °C) (derate 8.4 mW/°C above 85 °C) Thermal Resistance (Channel to die bottom) Storage Temperature Operating Temperature +6.0V 12 dBm -1 to 0.3V 0 to 2.5V 180 °C 0.8 W 119 °C/W -65 to +150 °C -40 to +85 °C 8 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number HMC753LP4E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn [2] Package Marking [1] 753 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 369 LOW NOISE AMPLIFIERS - SMT HMC753LP4E v01.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 3 Function GND Description Package bottom has exposed metal paddle that must be connected to RF/DC ground. This pad is AC coupled and matched to 50 Ohms. Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Interface Schematic RFIN 8, 9 Vgg2, 1 10 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 11, 20 - 23 16 N/C RFOUT This pad is AC coupled and matched to 50 Ohms. Application Circuit 8 - 370 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC753LP4E v01.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Material for Evaluation PCB 122826 [1] Item J1, J2 J3 - J6 C1 - C3 C4 - C6 C7 - C9 U1 PCB [2] SMA Connector DC Pin 100pF Capacitor, 0402 Pkg. 10,000pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum HMC753LP4E Amplifier 122824 Evaluation PCB [3] Description [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 371