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HMC754S8GE_10

HMC754S8GE_10

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC754S8GE_10 - GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz - Hittite Microwave ...

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC754S8GE_10 数据手册
HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Features output ip2: +78 dBm High Gain: 14.5 dB High output ip3: +38 dBm 75 ohm impedance single positive supply: +5v robust 1000v esD, class 1c soic-8 smT package Typical Applications 8 Amplifiers - Driver & GAin Block - smT The Hmc754s8Ge is ideal for: • cATv / Broadband infrastructure • Test & measurement equipment • line Amps and fiber nodes • customer premise equipment Functional Diagram General Description The Hmc754s8Ge is a GaAs/inGap HBT Dual channel Gain Block mmic smT amplifier covering Dc to 1 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic soic-8, for use with both amplifiers combined in push-pull configuration using external baluns to cancel out second order non-linearities and improve ip2 performance. in this configuration, the Hmc754s8Ge offers high gain, very low distortion & simple external matching. This high linearity amplifier consumes only 160mA from a single positive supply. Electrical Specifications, TA = +25° C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1] parameter Gain Gain variation over Temperature input return loss output return loss reverse isolation output power for 1 dB compression (p1dB) output Third order intercept point (ip3) (pout= 0 dBm per tone, 1 mHz spacing) output second order intercept point (ip2) composite second order (cso) composite Triple Beat (cTB) [2] cross modulation (XmoD) [2] noise figure supply current (icc1 + icc2) [1] Data taken with dual amplifiers combined in push-pull (default) configuration [2] input level +15 dBmv, 133 channels - with analog modulation [2] min. 0.05 - 0.5 GHz 0.5 - 0.87 GHz 0.87 - 1.0 GHz 0.05 - 0.87 GHz 0.05 - 0.5 GHz 0.5 - 0.87 GHz 0.05 - 0.5 GHz 0.5 - 0.87 GHz 0.05 - 0.87 GHz 0.05 - 0.87 GHz 0.05 - 0.87 GHz 0.05 - 0.5 GHz 0.05 - 0.87 GHz 0.05 - 0.87 GHz 0.05 - 0.87 GHz 0.05 - 0.5 GHz 0.05 - 0.87 GHz 145 19.5 13.5 12.7 12.1 Typ. 14.7 14.2 13.4 0.008 17 10 10 20 23 21 38 78 -81 -75 -67 5.5 6.5 160 max. Units dB dB dB dB/ °c dB dB dB dB dB dBm dBm dBm dBc dBc dBc dB dB 175 mA 8-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Gain vs. Temperature 18 15 Gain & Return Loss 20 10 RESPONSE (dB) 0 -10 -20 -30 -40 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) S21 S11 S22 8 25C 85C -40C 9 6 3 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 25C 85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 25C 85C -40C Output IP3 vs. Temperature 42 40 38 IP3 (dBm) Output IP2 vs. Temperature 100 90 IP2 (dBm) 80 36 34 32 30 25C 85C -40C 70 25C 85C -40C 60 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 50 0 0.05 0.1 0.15 FREQUENCY (GHz) 0.2 0.25 0.3 0.35 FREQUENCY (GHz) 0.4 0.45 0.5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8-2 Amplifiers - Driver & GAin Block - smT 12 GAIN (dB) HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz P1dB vs. Temperature 25 8 Amplifiers - Driver & GAin Block - smT Noise Figure vs. Temperature 10 25C 85C -40C 8 NOISE FIGURE (dB) 20 P1dB (dBm) 25C 85C -40C 6 15 4 10 2 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 25C 85C -40C Output IP2 vs. Output Power 90 Pout = -3dBm Pout = 0dBm Pout = 3dBm Pout = 6dBm 86 IP2 (dBm) 82 78 74 70 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 FREQUENCY (GHz) 0.4 0.45 0.5 CSO / CTB / XMOD @ +15 dBmV input, 133 channels (Analog) -50 CSOCSO+ CTB XMOD -60 RESPONSE (dBc) -70 -80 -90 -100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) 0.8 0.9 1 8-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Option 1 - Improved Input Return Loss & Gain Flatness (with Lower IP2) Application Gain & Return Loss 20 10 RESPONSE (dB) 0 -10 -20 -30 -40 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 60 S21 S11 S22 Output IP2 vs. Frequency 100 8 Amplifiers - Driver & GAin Block - smT 8-4 90 IP2 (dBm) 80 70 50 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 FREQUENCY (GHz) 0.4 0.45 0.5 Output IP3 vs. Frequency 42 40 Noise Figure vs. Frequency 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 38 IP3 (dBm) 36 34 32 30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Frequency 25 20 P1dB (dBm) 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Output IP3 vs. Frequency 42 40 Option 2 - 10 to 100 MHz Application 8 Amplifiers - Driver & GAin Block - smT Gain & Return Loss 20 10 RESPONSE (dB) 0 -10 -20 -30 -40 0 10 20 30 40 50 60 70 80 90 100 FREQUENCY (MHz) S21 S11 S22 38 IP3 (dBm) 36 34 32 30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) Noise Figure vs. Frequency 10 9 8 NOISE FIGURE (dB) 7 P1dB vs. Frequency 25 20 P1dB (dBm) 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 FREQUENCY (MHz) 15 10 5 0 0 10 20 30 40 50 60 70 80 90 100 FREQUENCY (MHz) 8-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Absolute Maximum Ratings collector Bias voltage (vcc) rf input power (rfin) Junction Temperature continuous pdiss (T = 85 °c) (derate 18.69 mW/°c above 85 °c) Thermal resistance (junction to ground paddle) storage Temperature operating Temperature esD sensitivity (HBm) +5.5 vdc +10 dBm 150 °c 1.21 W 53.5 °c/W -65 to +150 °c -40 to +85 °c class 1c elecTrosTATic sensiTive Device oBserve HAnDlinG precAUTions 8 Amplifiers - Driver & GAin Block - smT 8-6 Outline Drawing noTes: 1. leADfrAme mATeriAl: copper AlloY 2. Dimensions Are in incHes [millimeTers] 3. Dimension Does noT inclUDe molDflAsH of 0.15mm per siDe. 4. Dimension Does noT inclUDe molDflAsH of 0.25mm per siDe. 5. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pcB rf GroUnD. Package Information part number Hmc754s8Ge package Body material roHs-compliant low stress injection molded plastic lead finish 100% matte sn msl rating msl1 [2] package marking [3] Hmc754 XXXX [1] max peak reflow temperature of 235 °c [2] max peak reflow temperature of 260 °c [3] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz 8 Amplifiers - Driver & GAin Block - smT Pin Descriptions pin number function Description These pins are Dc coupled. An off chip Dc block capacitor is required. interface schematic 1, 4 rfin1, rfin2 5, 8 rfoUT1/vcc1, rfoUT2/vcc2 rf output and Dc bias for the output stage. 2 GnD These pins and package bottom must be connected to rf/ Dc ground. no connection. These pins may be connected to rf ground. performance will not be affected. 3, 6, 7 n/c 8-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Application Circuit for Push-Pull Operation 8 Amplifiers - Driver & GAin Block - smT 8-8 Components for Selected Options Tune options evaluation pcB number T1 [1] T2 [1] l1, l2 c13 [1] 1:1 Transformer standard 124063 eTc 1-1-13 eTc 1-1-13 180 nH open option 1 126311 mABAcT0039 eTc 1-1-13 180 nH 1.1 pf option 2 124825 eTc1-1T-5Tr eTc1-1T-5Tr 10 uH open F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz 8 Amplifiers - Driver & GAin Block - smT Evaluation PCB - Standard and Option 2 Application List of Materials for Evaluation PCB item J1, J2 J3 - J6 c1 - c6 c7, c8 c9, c11 c10, c12 l1, l2 [2] r1, r2 T1, T2 [2] U1 pcB [3] Description f-connector Dc pin 1 nf capacitor, 0402 pkg. [1] 4.7 µf capacitor, Tantalum, 0603 pkg. 68 pf capacitor, 0402 pkg. 10 nf capacitor, 0402 pkg. inductor, 0603 pkg. 0 ohm resistor, 0603 pkg. 1:1 Transformer Hmc754s8Ge Amplifier 124061 evaluation pcB The circuit board used in the final application should use rf circuit design techniques. signal lines should have 75 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation pcB number listed in the table “components for selected options.” [2] please refer to “components for selected options” table for values [3] circuit Board material: rogers 4350 or Arlon 25fr 8-9 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Evaluation PCB - Option 1 Application 8 Amplifiers - Driver & GAin Block - smT 8 - 10 List of Materials for Evaluation PCB item J1, J2 J3 - J6 c1 - c6 c7, c8 c9, c11 c10, c12 c13 l1, l2 r1, r2 T1, T2 [2] U1 pcB [3] Description f-connector Dc pin 1 nf capacitor, 0402 pkg. 4.7 µf capacitor, Tantalum, 0603 pkg. 68 pf capacitor, 0402 pkg. 10 nf capacitor, 0402 pkg. 1.1 pf capacitor, 0402 pkg. 180 nH inductor, 0603 pkg. 0 ohm resistor, 0603 pkg. 1:1 Transformer Hmc754s8Ge Amplifier 126309 evaluation pcB [1] The circuit board used in the final application should use rf circuit design techniques. signal lines should have 75 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation pcB number listed in the table “components for selected options.” [2] please refer to “components for selected options” table for values [3] circuit Board material: rogers 4350 or Arlon 25fr F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC754S8GE_10
1. 物料型号: - 型号为HMC754S8GE,是一款GaAs HBT高线性推挽放大器,阻抗为75欧姆,频率范围从直流至1GHz。

2. 器件简介: - HMC754S8GE是一款GaAs/InGaP HBT双通道增益块MMIC SMT放大器,覆盖直流至1GHz的频率范围。该产品包含两个增益块,封装在一个8引脚塑料SOIC-8中,可以与外部平衡不平衡转换器配合使用,以消除二阶非线性并提高IP2性能。在这种配置下,HMC754S8GE提供了高增益、非常低的失真和简单的外部匹配。这款高线性放大器仅消耗单正电源160mA。

3. 引脚分配: - 1, 4引脚:RFIN1, RFIN2,需要外部DC阻断电容,这些引脚是直流耦合的。 - 5, 8引脚:RFOUT1/VCC1, RFOUT2/VCC2,RF输出和输出级的直流偏置。 - 2引脚:GND,这些引脚和封装底部必须连接到RF/直流地。 - 3, 6, 7引脚:N/C(无连接),这些引脚可以连接到RF地,不影响性能。

4. 参数特性: - 增益:13.5至14.7dB,具体值取决于频率范围。 - 温度变化下的增益变化:0.008dB/°C。 - 输入回波损耗:17至10dB,取决于频率范围。 - 输出回波损耗:10至20dB,取决于频率范围。 - 反向隔离:23dB。 - 1dB压缩输出功率(P1dB):19.5至21dBm。 - 三阶截取点(IP3):38dBm。 - 二阶截取点(IP2):78dBm。

5. 功能详解: - HMC754S8GE适用于CATV/宽带基础设施、测试与测量设备、线路放大器和光纤节点、客户现场设备等。 - 该放大器在推挽配置下工作,提供高增益、低失真,并简化外部匹配。

6. 应用信息: - 适用于需要高线性、高增益和宽带宽的应用场合,如CATV系统和宽带通信设备。

7. 封装信息: - 封装为SOIC-8表面贴装型封装,符合RoHS标准的低应力注塑成型塑料,100%亚光锡铅 finish,MSL等级为1,封装标记为HMC754,后跟4位批次号。
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