HMC755LP4E_10

HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Features High Gain: 31 dB High pAe: 28% @ +33 dBm pout low eVm: 2.5% @ +25 dBm pout with 54 mbps ofDm signal High output ip3: +43 dBm integrated Detector & power Control 24 lead 4x4mm Qfn package: 16mm² Typical Applications The HmC755lp4e is ideal for: • Cellular/3G & lTe/4G • wimAX, wiBro & fixed wireless • military & sATCom 9 Amplifiers - lineAr & power - smT • Test equipment Functional Diagram General Description The HmC755lp4e is a high gain, high linearity GaAs inGap HBT mmiC power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (Ven1, 2, 3) can be used to reduce the rf output power/quiescent current, or for full power down of the pA. The integrated output power detector (VDeT) is internally coupled and requires no external components. for +25 dBm ofDm output power (64 QAm, 54 mbps), the HmC755lp4e achieves an error vector magnitude (eVm) of only 2.5% making it ideal for wimAX/lTe/4G Applications. The amplifier is packaged in a compact Qfn smT package and requires a minimum of external matching components. Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) [1] error Vector magnitude @ 2.5 GHz (54 mbps ofDm signal @ +24.5 dBm pout) supply Current (icc1 + icc2 + icc3) Control Current (ien1 + ien2 + ien3) Bias Current (ics) [1] Two-tone output power of +25 dBm per tone, 1 mHz spacing. 400 28 28 min. Typ. 2.3 - 2.8 31 0.05 10 7 31 33 43 2.5 480 16 12 600 max. Units GHz dB dB/ °C dB dB dBm dBm dBm % mA mA mA 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Gain vs. Temperature 40 35 Broadband Gain & Return Loss 40 30 RESPONSE (dB) 20 10 GAIN (dB) S21 S11 S22 30 25 +25 C +85 C - 40 C 0 20 9 2.8 3 3.2 -10 15 -20 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 10 2 2.2 2.4 2.6 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25 C +85 C - 40 C -5 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -15 +25 C +85 C - 40 C -10 -20 2 2.2 2.4 2.6 2.8 3 3.2 -15 2 2.2 2.4 2.6 2.8 3 3.2 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 -50 -60 -70 2 2.2 2.4 2.6 2.8 3 3.2 ISOLATION (dB) +25 C +85 C - 40 C FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Psat vs. Temperature 40 P1dB vs. Temperature 40 35 35 P1dB (dBm) 9 Amplifiers - lineAr & power - smT 30 Psat (dBm) +25 C +85 C - 40 C 30 25 25 +25 C +85 C - 40 C 20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature @ 26 dBm 50 Output IP3 vs. Temperature @ 2.4 GHz 50 45 45 IP3 (dBm) 40 IP3 (dB) 40 35 +25 C +85 C - 40 C 35 +25 C +85 C - 40 C 30 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 30 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) SINGLE TONE POUT (dBm) VDET Output Voltage vs. Temperature 3.5 3 2.5 +25 C +85 C - 40 C Power Compression @ 2.5 GHz 50 Pout (dBm), GAIN (dB), PAE (%) 40 VDET (V) 2 1.5 1 0.5 0 13 17 21 25 29 33 30 20 10 Pout Gain PAE 0 -20 -15 -10 -5 0 5 OUTPUT POWER (dBm) INPUT POWER (dBm) 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Noise Figure vs. Temperature 12 10 Gain & Power vs. Supply Voltage 50 GAIN (dB), P1dB (dBm), IP3 (dBm) 40 NOISE FIGURE (dB) 8 6 30 Gain P1dB IP3 20 4.5 5 5.5 4 +25 C +85 C - 40 C 9 2.8 2.9 3 2 0 2.2 2.3 2.4 2.5 2.6 2.7 SUPPLY VOLTAGE (V) FREQUENCY (GHz) Power Dissipation 6 5.5 Max Pdiss @ +85C EVM vs. Frequency (54 Mbps OFDM Signal) 7 6 5 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 5 EVM (%) 4.5 4 3.5 3 2.5 2 -20 -15 -10 -5 0 5 4 3 2 1 0 15 17 19 21 23 25 27 INPUT POWER (dBm) OUTPUT POWER (dBm) EVM vs. Temperature @ 2.5 GHz (54 Mbps OFDM Signal) 7 6 5 EVM (%) 4 3 2 1 0 15 17 19 +25 C +85 C - 40 C 21 23 25 27 OUTPUT POWER (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-4 Amplifiers - lineAr & power - smT POWER DISSIPATION (W) HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Supply Current vs. Supply Voltage Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2, Vcc3) Control Voltage (Ven1, 2, 3) rf input power (rfin)(Vcc = +5V) Junction Temperature 5.5V Vcc +0.5 +5 dBm 150 °C 5.2 w 12.5 °C/w -65 to +150 °C -40 to +85 °C Vcc (V) 4.5 5.0 5.5 icq (mA) 430 480 530 9 Amplifiers - lineAr & power - smT Continuous pdiss (T = 85 °C) (derate 80 mw/°C above 85 °C) Thermal resistance (junction to ground paddle) storage Temperature operating Temperature eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions Outline Drawing noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions Are in inCHes [millimeTers] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe. 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. Package Information part number HmC755lp4e package Body material roHs-compliant low stress injection molded plastic lead finish 100% matte sn msl rating msl3 [2] package marking [1] H755 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Pin Descriptions pin number 1, 3, 5, 6, 12 - 14, 18, 19, 21, 22, 24 function n/C Description These pins are not connected internally. However, all data shown herein was measured with these pins connected to rf/DC ground. Ground: Backside of package has exposed metal paddle that must be connected to ground thru a short path. Vias under the device are required. interface schematic 2 GnD 4 rfin This pin is DC coupled and matched to 50 ohms. 9 Amplifiers - lineAr & power - smT 9-6 7 VCs DC power supply pin for bias circuitry. 8 - 10 Ven1 - 3 power control pins. for max power these pins should be connected to 5V. This voltage can be reduced, or r1-r4 resistor values increased to reduce the quiescent current. for full power down, apply V