HMC756

HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC756 is ideal for: • Point-to-Point Radios Features Saturated Output Power: +33 dBm @ 28% PAE High Output IP3: +41 dBm High Gain: 23 dB DC Supply: +7V @ 790 mA DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram General Description The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd = Vdd1, = Vdd2 = +7V, Idd = 790 mA [1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Total Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 790 mA typical. [2] Measurement taken at +7V @ 790 mA, Pin / Tone = +17 dBm (IP3)[2] 29 19 Min. Typ. 16 - 20 22 0.026 16 18 31 33 41 790 30 20 Max. Min. Typ. 20 - 24 23 0.03 15 16 32 33 40 790 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 3 - 126 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 10 0 -10 -20 -30 12 14 16 18 20 22 FREQUENCY (GHz) 24 26 28 Gain vs. Temperature 30 28 26 GAIN (dB) +25C +85C -55C S21 S11 S22 24 22 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 127 20 18 16 14 14 16 18 20 22 24 26 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 +25C +85C -55C -4 RETURN LOSS (dB) -5 RETURN LOSS (dB) 20 22 24 26 -8 -10 -12 -15 -16 -20 -20 14 16 18 FREQUENCY (GHz) -25 14 16 18 20 22 24 26 FREQUENCY (GHz) P1dB vs. Temperature 36 +25C +85C -55C Psat vs. Temperature 37 34 P1dB (dBm) 35 Psat (dBm) 32 33 30 31 +25C +85C -55C 28 29 26 16 18 20 FREQUENCY (GHz) 22 24 27 16 18 20 FREQUENCY (GHz) 22 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz P1dB vs. Current 36 Psat vs. Current 37 34 P1dB (dBm) Psat (dBm) 720mA 790mA 840mA 35 3 LINEAR & POWER AMPLIFIERS - CHIP 32 33 30 31 720mA 790mA 840mA 28 29 26 16 18 20 FREQUENCY (GHz) 22 24 27 16 18 20 FREQUENCY (GHz) 22 24 Output IP3 vs. Temperature, Pout/Tone = +17 dBm 47 Output IP3 vs. Supply Current, Pout/Tone = +17 dBm 47 42 IP3 (dBm) IP3 (dBm) 42 37 37 720mA 790mA 840mA 32 +25C +85C -55C 32 27 16 18 20 FREQUENCY (GHz) 22 24 27 16 18 20 FREQUENCY (GHz) 22 24 Output IP3 vs. Supply Voltage, Pout/Tone = +17 dBm 47 Output IM3 80 70 42 IP3 (dBm) IM3 (dBc) 60 50 40 30 16GHz 18GHz 20GHz 22GHz 24GHz 37 6.5V 7.0V 7.5V 32 20 10 27 16 18 20 FREQUENCY (GHz) 22 24 0 10 12 14 16 18 20 22 24 26 Pout/TONE (dBm) 3 - 128 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Power Compression @ 20 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -15 Pout Gain PAE Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 +25C +85C -55C 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 129 -10 -5 0 5 10 15 14 16 18 20 22 24 26 INPUT POWER (dBm) FREQUENCY (GHz) Gain & Power vs. Supply Current @ 20 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) Gain & Power vs. Supply Voltage @ 20 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 35 35 30 GAIN(dB) P1dB(dBm) Psat(dBm) 30 GAIN (dB) P1dB (dBm) Psat (dBm) 25 25 20 20 15 720 740 760 780 Idd(Vdc) 800 820 840 15 5.5 6 6.5 Vdd(Vdc) 7 7.5 Power Dissipation 6 POWER DISSIPATION (W) 5.5 5 16GHz 18GHz 20GHz 22GHz 24GHz 4.5 4 -15 -12 -9 -6 -3 0 3 6 9 12 15 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Absolute Maximum Ratings Drain Bias Voltage (Vd) RF Input Power (RFIN) +7V +26 dBm 150 °C 5.6 W 11.7 °C/W -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +6.5 +7.0 +7.5 Idd (mA) 757 790 832 3 LINEAR & POWER AMPLIFIERS - CHIP Channel Temperature Continuous Pdiss (T= 85 °C) (derate 86 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 790 mA at +7V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information Standard GP-2 (Gel Pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 3 - 130 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 ohm. Interface Schematic 2 Vgg Gate control for PA. Adjust Vg to achieve recommended bias current. External bypass caps 100pF, 0.1uF and 4.7uF are required. 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 131 3, 5 Vdd1, Vdd2 Power Supply voltage for amplifier. External bypass capacitors of 100pF and 0.1uF are required. 4 RFOUT This pad is AC coupled and matched to 50 ohm. Die bottom must be connected to RF/DC ground Die Bottom GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 132 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 133 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible