HMC757LP4E

HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Features saturated output power: 27.5 dBm @ 21% pAe High output ip3: 34.5 dBm High Gain: 20.5 dB DC supply: +5V @ 400 mA no external matching required 24 lead 4x4 mm smT package: 16 mm² Typical Applications The HmC757lp4e is ideal for: • point-to-point radios • point-to-multi-point radios • VsAT 9 Amplifiers - lineAr & power - smT • military & space Functional Diagram General Description The HmC757lp4e is a three stage GaAs pHemT mmiC 1 watt power Amplifier which operates between 16 and 24 GHz. The HmC757lp4e provides 20.5 dB of gain, and 27.5 dBm of saturated output power and 21% pAe from a +5V supply. The rf i/os are DC blocked and matched to 50 ohms. The 4x4 mm plastic package eliminates the need for wirebondig, and is compatible with surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 400mA [1] parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept Total supply Current (idd) [1] Adjust Vgg between -2 to 0V to achieve idd = 400 mA typical. [2] measurement taken at pout / Tone = +16 dBm (ip3)[2] 24.5 18.5 min. Typ. 16 - 24 20.5 0.028 11 12 26.5 27.5 34.5 400 max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Gain vs. Temperature 28 +25C +85C -40C Broadband Gain & Return Loss vs. Frequency 30 20 24 RESPONSE (dB) 10 0 -10 16 -20 -30 12 14 16 18 20 22 FREQUENCY (GHz) 24 26 28 12 16 18 20 GAIN (dB) S21 S11 S22 20 9 22 24 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -4 RETURN LOSS (dB) -8 -12 -16 -20 -24 +25C +85C -40C -4 RETURN LOSS (dB) -8 -12 -16 -20 16 18 20 FREQUENCY (GHz) 22 24 16 18 20 FREQUENCY (GHz) 22 24 P1dB vs. Temperature 31 P1dB vs. Supply Voltage 33 5V 6V 7V 29 P1dB (dBm) P1dB (dBm) 31 27 29 25 +25C +85C -40C 27 23 25 21 16 18 20 FREQUENCY (GHz) 22 24 23 16 18 20 FREQUENCY (GHz) 22 24 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Psat vs. Supply Voltage 33 Psat vs. Temperature 33 +25C +85C -40C 31 Psat (dBm) 31 Psat (dBm) 29 29 9 Amplifiers - lineAr & power - smT 27 27 5V 6V 7V 25 25 23 16 18 20 FREQUENCY (GHz) 22 24 23 16 18 20 FREQUENCY (GHz) 22 24 P1dB vs. Supply Current (Idd) 31 Psat vs. Supply Current (Idd) 31 29 P1dB (dBm) Psat (dBm) 29 27 27 350mA 375mA 400mA 25 350mA 375mA 400mA 25 23 23 21 16 18 20 FREQUENCY (GHz) 22 24 21 16 18 20 FREQUENCY (GHz) 22 24 Output IP3 vs. Temperature, Pout/Tone = +16 dBm 45 Output IP3 vs. Supply Current, Pout/Tone = +16 dBm 45 40 IP3 (dBm) +25C +85C -40C 40 IP3 (dBm) 350mA 375mA 400mA 35 35 30 30 25 16 18 20 FREQUENCY (GHz) 22 24 25 16 18 20 FREQUENCY (GHz) 22 24 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Output IM3 @ Vdd = +5V 70 60 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +16 dBm 45 40 IP3 (dBm) 5.0V 6.0V 7.0V 50 IM3 (dBc) 40 30 20 10 35 30 9 5 7 9 11 13 15 17 19 21 23 Pout/TONE (dBm) 25 16 18 20 FREQUENCY (GHz) 22 24 0 Output IM3 @ Vdd = +6V 70 60 50 IM3 (dBc) 40 30 20 10 0 5 7 9 11 13 15 17 19 21 23 Pout/TONE (dBm) 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz Output IM3 @ Vdd = +7V 70 60 50 IM3 (dBc) 40 30 20 10 0 5 7 9 11 13 15 17 19 21 23 Pout/TONE (dBm) 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz Power Compression @ 20 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -18 Pout Gain PAE Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 +25C +85C -40C -13 -8 -3 2 7 12 16 18 20 FREQUENCY (GHz) 22 24 INPUT POWER (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-4 Amplifiers - lineAr & power - smT HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Gain & Power vs. Supply Voltage @ 20 GHz 35 Gain (dB), P1dB (dBm), Psat (dBm) Gain & Power vs. Supply Current @ 20 GHz 35 Gain (dB), P1dB (dBm), Psat (dBm) 30 30 25 25 9 Amplifiers - lineAr & power - smT Gain P1dB Psat 20 Gain P1dB Psat 20 15 15 10 350 10 360 370 380 Idd (mA) 390 400 5 5.5 6 Vdd (V) 6.5 7 Power Dissipation 2.5 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz POWER DISSIPATION (W) 2.3 2.1 1.9 1.7 1.5 -18 -14 -10 -6 -2 2 6 10 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 40 mw/°C above 85 °C) Thermal resistance (channel to exposed ground paddle) storage Temperature operating Temperature 7V 23 dBm 150 °C 2.7 w 24.85 C/w -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.0 +5.5 +6.0 idd (mA) 400 400 400 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 400 mA at +5.5V eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Outline Drawing 9 Amplifiers - lineAr & power - smT 9-6 noTes: 1. pACKAGe BoDY mATeriAl: AlUminA 2. leAD AnD GroUnD pADDle plATinG: 30-80 miCroinCHes GolD oVer 50 miCroinCHes minimUm niCKel. 3. Dimensions Are in inCHes [millimeTers]. 4. leAD spACinG TolerAnCe is non-CUmUlATiVe 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm DATUm -C6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. ClAssifieD As moisTUre sensiTiViTY leVel (msl) 1. Package Information part number HmC757lp4e package Body material roHs-compliant low stress injection molded plastic lead finish 100% matte sn msl rating msl1 [2] package marking [1] H757 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Pin Descriptions pin number 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 3 function GnD Description These pins and package bottom must be connected to rf/DC ground. This pin is AC coupled and matched to 50 ohms. The pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/DC ground externally. This pin is AC coupled and matched to 50 ohms. interface schematic rfin 9 Amplifiers - lineAr & power - smT 8 - 11, 20, 22 n/C 16 rfoUT 21 Vdd Drain bias for amplifier. external bypass caps 100pf, 0.1uf and 4.7uf are required 23 Vgg Gate control for pA. Adjust Vgg to achieve recommended bias current. external bypass caps 100pf, 0.1uf and 4.7uf are required. Application Circuit 9-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Evaluation PCB 9 Amplifiers - lineAr & power - smT 9-8 List of Materials for Evaluation PCB 131216 [1] item J1, J2 J3, J4 C1, C16 C5, C17 C9, C18 U1 pCB [2] Description 2.9 mm Connectors DC pins 100 pf Capacitor, 0402 pkg. 10 kpf Capacitor, 0402 pkg. 4.7 µf Capacitor, 0402 pkg. HmC757lp4e power Amplifier 125559 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon fr4 The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com