HMC770LP4BE_1007

HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Features High output ip3: +40 dBm single positive supply: +5v low noise figure: 2.5 dB [1] Differential rf i/o’s 20 lead 4x4 mm smT package: 16mm² 8 Amplifiers - Driver & GAin Block - smT Typical Applications The Hmc770lp4Be is ideal for: • cellular / pcs / 3G • fixed Wireless & WlAn • cATv, cable modem & DBs • microwave radio & Test equipment • if & rf Applications Functional Diagram General Description The Hmc770lp4Be is a GaAs pHemT Differential Gain Block mmic amplifier covering 40 mHz to 1 GHz and packaged in a 4x4 mm plastic Qfn smT package. This versatile amplifier can be used as a cascadable if or rf gain stage in both 50 ohm and 75 ohm applications. The Hmc770lp4Be delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure. Differential i/os make this amplifier ideal for transimpedance and sAW filter applications, and in transceivers where the if path must be handled differentially for improved noise performance. evaluation pcBs are all available with either smA (50Ω) or Type f (75Ω) connectors. Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω [2] parameter frequency range Gain [2] Gain variation over Temperature input return loss output return loss output power for 1 dB compression (p1dB) output Third order intercept (ip3) (pout = 0 dBm per tone, 1 mHz spacing) noise figure [2] Transimpedance input referred current noise [3] supply current 1 (idd1) supply current 2 (idd2) 20 12 min. Typ. Zo = 50 ohms 0.04 - 1 16.5 0.006 17 18 23 40 2.5 136 134 160 160 4 21 12 max. min. Typ. Zo =75 ohms 0.04 - 1 16 0.008 15 15 23.5 37.5 2.75 700 6 136 134 160 160 4 max. Units GHz dB dB / °c dB dB dBm dBm dB ohms pA / √Hz mA mA [1] 1:1 Balun losses have noT been removed from measurements. see list of materials for eval pcB for the type of balun. [2] see application circuit [3] includes balun loss, no photo diode. see list of materials for eval pcB for the type of balun. 8-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Gain & Return Loss [1] 20 Gain vs. Temperature [1] 20 10 RESPONSE (dB) GAIN (dB) S21 S11 S22 8 +25C +85C -40C 15 0 10 -10 -20 5 -30 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Gain vs. Vdd [1] 20 Gain vs. Rbias 20 15 GAIN (dB) GAIN (dB) 15 10 4.5V 5.0V 5.5V 10 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 5 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 Return Loss vs. Vdd [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 S11 4.5V 5.0V 5.5V S22 +25C +85C -40C S22 S11 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] rbias=r1=200 ohms. see application circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8-2 Amplifiers - Driver & GAin Block - smT HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data 8 Amplifiers - Driver & GAin Block - smT Return Loss vs. Rbias 0 -5 RETURN LOSS (dB) -10 -15 -20 S11 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms Isolation vs. Rbias 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms S22 -25 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Noise Figure vs. Temperature [1] 8 Noise Figure vs. Temperature for Low Frequencies [1][2] 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 6 +25C +85C -40C 6 +25C +85C -40C 4 4 2 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) Noise Figure vs. Vdd [1] 8 Noise Figure vs. Vdd for Low Frequencies [1][2] 8 NOISE FIGURE (dB) 4 NOISE FIGURE (dB) 6 4.5V 5.0V 5.5V 6 4.5V 5.0V 5.5V 4 2 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) [1] rbias=r1=200 ohms. see application circuit. [2] see application circuit for the tune for low frequencies. 8-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Noise Figure vs. Rbias 8 Noise Figure vs. Rbias for Low Frequencies [2] 8 8 Amplifiers - Driver & GAin Block - smT 8-4 NOISE FIGURE (dB) 4 NOISE FIGURE (dB) 6 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 6 Rbias=1.5k Ohms Rbias=600 Ohms Rbias=200 Ohms 4 2 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) P1dB vs. Temperature [1] 30 25 20 15 10 5 0 P1dB vs. Vdd [1] 30 25 20 15 10 5 0 4.5V 5.0V 5.5V P1dB (dBm) +25C +85C -40C 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 P1dB (dBm) 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 P1dB vs. Rbias [1] 30 25 20 15 10 5 0 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms P1dB (dBm) 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] rbias=r1=200 ohms. see application circuit. [2] see application circuit for the tune for low frequencies. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Output IP3 vs. Temperature [1] 50 45 40 IP3 (dBm) 35 30 25 20 IP3 (dBm) 8 Amplifiers - Driver & GAin Block - smT Output IP3 vs. Vdd [1] 50 45 40 35 30 25 20 4.5V 5.0V 5.5V +25C +85C -40C 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Output IP3 vs. Rbias 50 45 40 IP3 (dBm) Idd vs. Rbias 400 350 300 Idd (mA) 250 200 150 100 4.5 V 5.0 V 5.5 V 35 30 25 20 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 50 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 200 400 600 800 1000 1200 1400 1600 Rbias (Ohm) [1] rbias=r1=200 ohms. see application circuit 8-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Gain & Return Loss [1] 20 Gain vs. Temperature [1] 20 10 RESPONSE (dB) S21 S11 S22 8 +25C +85C -40C 15 GAIN (dB) 0 10 -10 -20 5 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Gain vs. Vdd [1] 20 Gain vs. Rbias 20 15 GAIN (dB) GAIN (dB) 15 10 10 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 5 4.5V 5.0V 5.5V 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 S22 S11 +25C +85C -40C Return Loss vs. Vdd [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 S11 4.5V 5.0V 5.5V S22 -30 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) FREQUENCY (GHz) [1] rbias=r1=200 ohms. see application circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8-6 Amplifiers - Driver & GAin Block - smT HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Return Loss vs. Rbias 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 S11 Rbias =1.5k Ohms Rbias =600 Ohms Rbias =200 Ohms 8 Amplifiers - Driver & GAin Block - smT S22 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Noise Figure vs. Temperature 8 [1] Noise Figure vs. Temperature for Low Frequencies [1][2] 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 6 +25C +85C -40C 6 +25C +85C -40C 4 4 2 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) Noise Figure vs. Vdd [1] 8 Noise Figure vs. Vdd for Low Frequencies [1][2] 8 NOISE FIGURE (dB) 4 NOISE FIGURE (dB) 6 4.5V 5.0V 5.5V 6 4.5V 5.0V 5.5V 4 2 2 0 0 0.2 0.4 0.6 0.8 1 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) FREQUENCY (GHz) [1] rbias=r1=200 ohms. see application circuit. [2] see application circuit for the tune for low frequencies. 8-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Noise Figure vs. Rbias 8 Noise Figure vs. Rbias for Low Frequencies [1][2] 8 8 Amplifiers - Driver & GAin Block - smT 8-8 NOISE FIGURE (dB) NOISE FIGURE (dB) 6 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 6 Rbias=1.5k Ohms Rbias=600 Ohms Rbias=200 Ohms 4 4 2 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) P1dB vs. Temperature [1] 30 25 20 15 10 5 0 P1dB vs. Vdd [1] 30 25 20 15 10 5 0 P1dB (dBm) P1dB (dBm) +25C +85C -40C 4.5V 5.0V 5.5V 0 0.2 0.4 0.6 0.8 1 0 0.2 FREQUENCY (GHz) 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] rbias=r1=200 ohms. see application circuit. [2] see application circuit for the tune for low frequencies. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data P1dB vs. Rbias 30 25 20 15 10 5 0 IP3 (dBm) Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 8 Amplifiers - Driver & GAin Block - smT Output IP3 vs. Temperature [1] 50 45 40 35 30 25 20 P1dB (dBm) +25C +85C -40C 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Output IP3 vs. Vdd [1] 50 45 40 IP3 (dBm) 35 30 25 20 Output IP3 vs. Rbias 50 45 40 IP3 (dBm) 35 30 25 20 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 4.5V 5.0V 5.5V 0 0.2 0.4 0.6 0.8 1 0 0.2 FREQUENCY (GHz) 0.4 0.6 FREQUENCY (GHz) 0.8 1 Input Referred Current Noise vs. Frequency [1] 20 15 NOISE (pA/ √Hz) 10 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] rbias=r1=200 ohms. see application circuit 8-9 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Absolute Maximum Ratings Drain Bias voltage rf input power (rfin) channel Temperature continuous pdiss (T=85 °c) (derate 33.21 mW/ °c Above +85 °c) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature esD sensitivity (HBm) 5.5 vdc +20 dBm 150 °c 2.16W 30.11 °c/W -65 to 150 °c -40 to +85 °c class 1A 8 Amplifiers - Driver & GAin Block - smT 8 - 10 Outline Drawing noTes: 1. pAckAGe BoDY mATeriAl: loW sTress inJecTion molDeD plAsTic silicA AnD silicon impreGnATeD. 2. leAD AnD GroUnD pADDle mATeriAl: copper AlloY. 3. leAD AnD GroUnD pADDle plATinG: 100% mATTe Tin 4. Dimensions Are in incHes [millimeTers]. 5. leAD spAcinG TolerAnce is non-cUmUlATive. 6. pAD BUrr lenGTH sHAll Be 0.15mm mAX. pAD BUrr HeiGHT sHAll Be 0.05mm mAX. 7. pAckAGe WArp sHAll noT eXceeD 0.05mm 8. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pcB rf GroUnD. 9. refer To HiTTiTe ApplicATion noTe for sUGGesTeD pcB lAnD pATTern. Package Information part number Hmc770lp4Be package Body material roHs-compliant low stress injection molded plastic lead finish 100% matte sn msl rating msl3 [2] package marking [1] H770 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °c F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Pin Descriptions pin number 1, 5 function inn, inp Description This pin is Dc coupled An off chip Dc blocking capacitor is required interface schematic 8 Amplifiers - Driver & GAin Block - smT 11, 15 oUTn, oUTp This pin is Dc coupled An off chip Dc blocking capacitor is required 9, 17 2 - 4, 6 - 8, 10, 12 - 14, 16, 18, 19 rfcn, rfcp n/c rf choke and Dc Bias (vdd) for the output stage These pins may be left unconnected. 20 BiAs This pin is used to set the Dc current of the amplifier by selection of the external bias resistor. see application circuit. package Base GnD package bottom must be connected to rf/Dc ground. Application Circuit for Transimpedance Amplifier Mode for use with 75 Ohm Evaluation Board 8 - 11 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Application Circuit for Differential Amplifier Mode for use with either 50 or 75 Ohm Evaluation Board 8 Amplifiers - Driver & GAin Block - smT 8 - 12 Components for Selected Options Tune option evaluation pcB number J1, J2 T1, T2 [1] [1] 1:1 Balun Balun eTc1-1-13 is recommended for broadband and high frequency applications with the limitation that eTc1-1-13 degrades noise performance below 200 mHz. Balun eTc1-1T-5Tr is recommended for low frequency applications with the limitation that eTc1-1T-5Tr degrades gain above 500 mHz. 50 ohm 125980 50 ohm low frequency 127930 75 ohm 121737 75 ohm low frequency 127931 smA connector eTc 1-1-13 eTc1-1T-5Tr f connector eTc 1-1-13 eTc1-1T-5Tr F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Evaluation PCB - 50 Ohm 8 Amplifiers - Driver & GAin Block - smT List of Materials for Evaluation PCB item J1, J2 J3 - J5 c1 - c4, c7, c13 c5, c6, c8 - c12, c16 c10, c12 c14, c15 l1, l2 r1 (rbias) r2, r3 T1, T2 [2] U1 pcB [3] Description Johnson smA connector Dc pin 10 nf capacitor, 0603 pkg. 100 pf capacitor, 0402 pkg. 10 nf capacitor, 0402 pkg. 2.2 µf capacitor, Tantalum 1 uH inductor, 0805 pkg. 200 ohm resistor, 0402 pkg. 0 ohm resistor, 0805 pkg. 1:1 Transformer Hmc770lp4Be Gain Block Amplifier 125978 evaluation pcB [1] The circuit board used in the final application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation pcB number listed in the table “components for selected options.” [2] please refer to “components for selected options” table for values [3] circuit Board material: rogers 4350 8 - 13 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Evaluation PCB - 75 Ohm 8 Amplifiers - Driver & GAin Block - smT 8 - 14 List of Materials for Evaluation PCB item J1, J2 J3 - J5 c1 - c4, c7, c13 c5, c6, c8 - c12, c16 c10, c12 c14, c15 l1, l2 r1 (rbias) r2, r3 T1, T2 [2] U1 pcB [3] Description f-connector Dc pin 10 nf capacitor, 0603 pkg. 100 pf capacitor, 0402 pkg. 10 nf capacitor, 0402 pkg. 2.2 µf capacitor, Tantalum 1 uH inductor, 0805 pkg. 200 ohm resistor, 0402 pkg. 0 ohm resistor, 0805 pkg. 1:1 Transformer Hmc770lp4Be Gain Block Amplifier 121735 evaluation pcB [1] The circuit board used in the final application should use rf circuit design techniques. signal lines should have 75 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation pcB number listed in the table “components for selected options.” [2] please refer to “components for selected options” table for values [3] circuit Board material: rogers 4350 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com